BZX84C2V7LT1G

BZX84B4V7LT1, BZX84C2V4LT1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. Features http://onsemi.com 3 Cathode 1 Anode • • • • • • • 225 mW Rating on FR−4 or FR−5 Board Zener Breakdown Voltage Range − 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 KV) per Human Body Model Tight Tolerance Series Available (See Page 4) Pb−Free Packages are Available MARKING DIAGRAM 3 1 2 SOT−23 CASE 318 STYLE 8 1 xxx M G G Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily Solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 MAXIMUM RATINGS Rating Total Power Dissipation on FR−5 Board, (Note 1) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient Total Power Dissipation on Alumina Substrate, (Note 2) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD 225 1.8 556 300 2.4 417 −65 to +150 mW mW/°C °C/W mW mW/°C °C/W °C Max Unit xxx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device BZX84CxxxLT1 BZX84CxxxLT1G BZX84CxxxLT3 BZX84CxxxLT3G BZX84BxxxLT1 BZX84BxxxLT1G BZX84BxxxLT3 BZX84BxxxLT3G Package SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 Shipping † 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel RqJA PD RqJA TJ, Tstg Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 X 0.75 X 0.62 in. 2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina. SOT−23 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2005 1 October, 2005 − Rev. 11 Publication Order Number: BZX84C2V4LT1/D BZX84B4V7LT1, BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol VZ IZT ZZT IR VR IF VF QVZ C Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Leakage Current @ VR Reverse Voltage Forward Current Forward Voltage @ IF Maximum Temperature Coefficient of VZ Max. Capacitance @ VR = 0 and f = 1 MHz VZ VR IR VF IZT V IF I Zener Voltage Regulator http://onsemi.com 2 BZX84B4V7LT1, BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.) VZ1 (Volts) @ IZT1 = 5 mA (Note 3) Device Marking Z11 Z12 Z13 Z14 Z15 Z16 W9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 VZ2 (V) @ IZT2 = 1 mA (Note 3) VZ3 (V) @ IZT3 = 20 mA (Note 3) Max Reverse Leakage Current IR mA 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 VR @ Volts 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14 15.4 16.8 qVZ (mV/k) @ IZT1 = 5 mA Min −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −2.7 −2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 Max 0 0 0 0 0 −2.5 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 Device* BZX84C2V4LT1, G BZX84C2V7LT1, G BZX84C3V0LT1, G BZX84C3V3LT1, G BZX84C3V6LT1, G BZX84C3V9LT1, G BZX84C4V3LT1, G BZX84C4V7LT1, G BZX84C5V1LT1, G BZX84C5V6LT1, G BZX84C6V2LT1, G BZX84C6V8LT1, G BZX84C7V5LT1, G BZX84C8V2LT1, G BZX84C9V1LT1, G BZX84C10LT1, G BZX84C11LT1, G BZX84C12LT1, G BZX84C13LT1, G BZX84C15LT1, G BZX84C16LT1, G BZX84C18LT1, G BZX84C20LT1, G BZX84C22LT1, G BZX84C24LT1, G Min 2.2 2.5 2.8 3.1 3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 Nom 2.4 2.7 3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 Max 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 ZZT1 (W) @ IZT1 = 5 mA 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 Min 1.7 1.9 2.1 2.3 2.7 2.9 3.3 3.7 4.2 4.8 5.6 6.3 6.9 7.6 8.4 9.3 10.2 11.2 12.3 13.7 15.2 16.7 18.7 20.7 22.7 Max 2.1 2.4 2.7 2.9 3.3 3.5 4 4.7 5.3 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14 15.5 17 19 21.1 23.2 25.5 ZZT2 (W) @ IZT2 = 1 mA 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 Min 2.6 3 3.3 3.6 3.9 4.1 4.4 4.5 5 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.5 13.9 15.4 16.9 18.9 20.9 22.9 Max 3.2 3.6 3.9 4.2 4.5 4.7 5.1 5.4 5.9 6.3 6.8 7.4 8 8.8 9.7 10.7 11.8 12.9 14.2 15.7 17.2 19.2 21.4 23.4 25.7 ZZT3 (W) @ IZT3 = 20 mA 50 50 50 40 40 30 30 15 15 10 6 6 6 6 8 10 10 10 15 20 20 20 20 25 25 C (pF) @ VR = 0 f = 1 MHz 450 450 450 450 450 450 450 260 225 200 185 155 140 135 130 130 130 130 120 110 105 100 85 85 80 VZ1 Below @ IZT1 = 2 mA Device Marking Y10 Y11 Y12 Y13 Y14 Y15 Y16 Y17 Y18 Y19 Y20 Y21 Min 25.1 28 31 34 37 40 44 48 52 58 64 70 Nom 27 30 33 36 39 43 47 51 56 62 68 75 Max 28.9 32 35 38 41 46 50 54 60 66 72 79 Device BZX84C27LT1, G BZX84C30LT1, G BZX84C33LT1, G BZX84C36LT1, G BZX84C39LT1, G BZX84C43LT1, G BZX84C47LT1, G BZX84C51LT1, G BZX84C56LT1, G BZX84C62LT1, G BZX84C68LT1, G BZX84C75LT1, G ZZT1 Below @ IZT1 = 2 mA 80 80 80 90 130 150 170 180 200 215 240 255 VZ2 Below @ IZT2 = 0.1 mA Min 25 27.8 30.8 33.8 36.7 39.7 43.7 47.6 51.5 57.4 63.4 69.4 Max 28.9 32 35 38 41 46 50 54 60 66 72 79 ZZT2 Below @ IZT4 = 0.5 mA 300 300 325 350 350 375 375 400 425 450 475 500 VZ3 Below @ IZT3 = 10 mA Min 25.2 28.1 31.1 34.1 37.1 40.1 44.1 48.1 52.1 58.2 64.2 70.3 Max 29.3 32.4 35.4 38.4 41.5 46.5 50.5 54.6 60.8 67 73.2 80.2 ZZT3 Below @ IZT3 = 10 mA 45 50 55 60 70 80 90 100 110 120 130 140 Max Reverse Leakage Current IR mA 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 @ VR (V) 18.9 21 23.1 25.2 27.3 30.1 32.9 35.7 39.2 43.4 47.6 52.5 qVZ (mV/k) Below @ IZT1 = 2 mA Min 21.4 24.4 27.4 30.4 33.4 37.6 42.0 46.6 52.2 58.8 65.6 73.4 Max 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6 C (pF) @ VR = 0 f = 1 MHz 70 70 70 70 45 40 40 40 40 35 35 35 3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. * The “G” suffix indicates Pb−Free package available. http://onsemi.com 3 BZX84B4V7LT1, BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) Max Reverse Leakage Current IR mA 3 2 1 3 2 1 0.7 0.5 0.05 0.05 @ Volts 2 2 2 4 4 5 5 6 11.2 12.6 Min −3.5 −2.7 −2 0.4 1.2 2.5 3.2 3.8 10.4 12.4 Max 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7 14 16 VR VZ (Volts) @ IZT = 5 mA (Note 4) Device BZX84B4V7LT1, G BZX84B5V1LT1, G BZX84B5V6LT1, G BZX84B6V2LT1, G BZX84B6V8LT1, G BZX84B7V5LT1, G BZX84B8V2LT1, G BZX84B9V1LT1, G BZX84B16LT1, G BZX84B18LT1, G Device Marking T10 T11 T12 T13 T14 T15 T16 T17 T19 T20 Min 4.61 5.00 5.49 6.08 6.66 7.35 8.04 8.92 15.7 17.6 Nom 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 16 18 Max 4.79 5.20 5.71 6.32 6.94 7.65 8.36 9.28 16.3 18.4 ZZT (W) @ IZT = 5 mA (Note 4) Max 80 60 40 10 15 15 15 15 40 45 qVZ (mV/k) @ IZT = 5 mA C (pF) @ VR =0, f = 1 MHz 260 225 200 185 155 140 135 130 105 100 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. * The “G” suffix indicates Pb−Free package available. http://onsemi.com 4 BZX84B4V7LT1, BZX84C2V4LT1 Series TYPICAL CHARACTERISTICS θ VZ , TEMPERATURE COEFFICIENT (mV/ C) ° 8 7 6 5 4 3 2 1 0 −1 −2 −3 VZ @ IZT TYPICAL TC VALUES 100 θ VZ , TEMPERATURE COEFFICIENT (mV/ C) ° TYPICAL TC VALUES VZ @ IZT 10 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 Z ZT, DYNAMIC IMPEDANCE (Ω ) IZ = 1 mA 5 mA 20 mA 10 TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz 1000 IF, FORWARD CURRENT (mA) 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 100 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 0.5 75°C 25°C 0.6 0 °C 1.1 1.2 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 3. Effect of Zener Voltage on Zener Impedance Figure 4. Typical Forward Voltage http://onsemi.com 5 BZX84B4V7LT1, BZX84C2V4LT1 Series TYPICAL CHARACTERISTICS 1000 0 V BIAS 1 V BIAS C, CAPACITANCE (pF) 100 BIAS AT 50% OF VZ NOM 10 TA = 25°C 1000 I R , LEAKAGE CURRENT (μA) 100 10 1 0.1 0.01 +25 °C −55 °C 0 10 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 80 90 +150°C 0.001 0.0001 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 0.00001 Figure 5. Typical Capacitance Figure 6. Typical Leakage Current 100 TA = 25°C 100 TA = 25°C I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) 10 10 1 1 0.1 0.1 0.01 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 10 12 0.01 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) http://onsemi.com 6 BZX84B4V7LT1, BZX84C2V4LT1 Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 mm inches SCALE 10:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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