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BZX84C3V3 - BZX84C33
Zeners
Tolerance: C = 5%
CONNECTION
DIAGRAM
3
3
2
1
1
2 NC
SOT-23
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
IFRM
Repetitive Peak Forward Current
250
mA
IZRM
Repetitive Peak Working Current
250
mA
PD
Parameter
Power Dissipation
Referencing RθJA, TA = 25°C
250
Referencing ψJL, TL = 25°C
550
mW
RθJA
Junction-to-Ambient Thermal Resistance(3)
465
°C/W
ψJL
Junction-to-Lead Thermal Characteristics
(with reference to Cathode)
220
°C/W
TSTG
TJ
Storage Temperature Range
-55 to +150
°C
Operating Junction Temperature
-55 to +150
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
3. Device mounted on FR-4 PCB, board size = 76.2 mm x 114.3 mm
© 2001 Fairchild Semiconductor Corporation
BZX84C3V3 - BZX84C33 Rev. 1.10
www.fairchildsemi.com
BZX84C3V3 - BZX84C33 — Zeners
November 2015
Values are at TA = 25°C unless otherwise noted.
IZ = 5.0 mA
Device
Mark
VZ (V)
Min.
Max.
IZ = 1.0 mA
VZ (V)
ZZ (Ω)
Min.
Max.
IZ = 20 mA
ZZ (Ω)
VZ (V)
Min.
Max.
ZZ (Ω)
BZX84C3V3
Z14
3.1
3.5
95
2.3
2.9
600
3.6
4.2
40
BZX84C3V6
Z15
3.4
3.8
90
2.7
3.3
600
3.9
4.5
40
BZX84C3V9
Z16
3.7
4.1
90
2.9
3.5
600
4.1
4.7
30
BZX84C4V3
Z17
4.0
4.6
90
3.3
4.0
600
4.4
5.1
30
BZX84C4V7
Z1
4.4
5.0
80
3.7
4.7
500
4.5
5.4
15
BZX84C5V1
Z2
4.8
5.4
60
4.2
5.3
480
5.0
5.9
15
BZX84C5V6
Z3
5.2
6.0
40
4.8
6.0
400
5.2
6.3
10
BZX84C6V2
Z4
5.8
6.6
10
5.6
6.6
150
5.8
6.8
6
BZX84C6V8
Z5
6.4
7.2
15
6.3
7.2
80
6.4
7.4
6
BZX84C7V5
Z6
7.0
7.9
15
6.9
7.9
80
7.0
8.0
6
BZX84C8V2
Z7
7.7
8.7
15
7.6
8.7
80
7.7
8.8
6
BZX84C9V1
Z8
8.5
9.6
15
8.4
9.6
100
8.5
9.7
8
BZX84C10
Z9
9.4
10.6
20
9.3
10.6
150
9.4
10.7
10
BZX84C11
Y1
10.4
11.6
20
10.2
11.6
150
10.4
11.8
10
BZX84C12
Y2
11.4
12.7
25
11.2
12.7
150
11.4
12.9
10
BZX84C13
Y3
12.4
14.1
30
12.3
14.0
170
12.5
14.2
15
BZX84C15
Y4
13.8
15.6
30
13.7
15.5
200
13.9
15.7
20
BZX84C16
Y5
15.3
17.1
40
15.2
17.0
200
15.4
17.2
20
BZX84C18
Y6
16.8
19.1
45
16.7
19.0
225
16.9
19.2
20
BZX84C20
Y7
18.8
21.2
55
18.7
21.1
225
18.9
21.4
20
BZX84C22
Y8
20.8
23.3
55
20.7
23.2
250
20.9
23.4
25
BZX84C24
Y9
22.8
25.6
70
22.7
25.5
250
22.9
25.7
25
BZX84C27
Y10
25.1
28.9
80
25.0
28.9
300
25.2
29.3
45
BZX84C30
Y11
28.0
32.0
80
27.8
32.0
300
28.1
32.4
50
BZX84C33
Y12
31.0
35.0
80
30.8
35.0
325
31.1
35.4
55
VF Forward Voltage = 0.9 V Maximum at IF =10 mA for all BZX84 series
© 2001 Fairchild Semiconductor Corporation
BZX84C3V3 - BZX84C33 Rev. 1.10
www.fairchildsemi.com
2
BZX84C3V3 - BZX84C33 — Zeners
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
DVZ / Dt at 5.0 mA (mV/k)
Device
VR (V)
IR (μA)
Cap(4) (pF)
Min.
Max.
BZX84C3V3
1.0
5.0
450
-3.5
0.0
BZX84C3V6
1.0
5.0
450
-3.5
0.0
BZX84C3V9
1.0
5.0
450
-3.5
0.0
BZX84C4V3
1.0
5.0
450
-3.5
0.0
BZX84C4V7
2.0
3
260
-3.5
0.2
BZX84C5V1
2.0
2
225
-2.7
1.2
BZX84C5V6
2.0
1
200
-2.0
2.5
BZX84C6V2
4.0
3
185
0.4
3.7
BZX84C6V8
4.0
2
155
1.2
4.5
BZX84C7V5
5.0
1
140
2.5
5.3
BZX84C8V2
5.0
0.7
135
3.2
6.2
BZX84C9V1
6.0
0.5
130
3.8
7.0
BZX84C10
7.0
0.2
130
4.5
8.0
BZX84C11
8.0
0.1
130
5.4
9.0
BZX84C12
8.0
0.1
130
6.0
10
BZX84C13
8.0
0.1
120
7.0
11
BZX84C15
10.5
0.05
110
9.2
13
BZX84C16
11.2
0.05
105
10.4
14
BZX84C18
12.6
0.05
100
12.4
16
BZX84C20
14
0.05
85
14.4
18
BZX84C22
15.4
0.05
85
16.4
20
BZX84C24
16.8
0.05
80
18.4
22
BZX84C27
18.9
0.05
70
21.4
25.3
BZX84C30
21
0.05
70
24.4
29.4
BZX84C33
23.1
0.05
70
27.4
33.4
Note:
4. Capacitance at VR= 0.0 V, f = 1.0 MHz.
© 2001 Fairchild Semiconductor Corporation
BZX84C3V3 - BZX84C33 Rev. 1.10
www.fairchildsemi.com
3
BZX84C3V3 - BZX84C33 — Zeners
Electrical Characteristics (Continued)
BZX84C3V3 - BZX84C33 — Zeners
Typical Performance Characteristics
5000
35
25
Z Z - IMPEDANCE (ohms)
V Z - ZENER VOLTAGE (V)
30
TA = 25º C
20
15
V Z = 12.0V
10
V Z = 3.3V
V Z = 5.1V
5
1
2
5
10
I Z- ZENER CURRENT (mA)
20
2000
1000
500 V Z = 3.3V
200
100
50
20
10 V Z = 12.0V
5
30
6
V Z - ZENER VOLTAGE (V)
VZ - ZENER VOLTAGE (V)
VZ= 3.3 V
4.0
o
TA= -25 C
TA= 25 C
o
TA= 85 C
o
TA= 100 C
o
TA= 125 C
4
10
TA = 85º C
T A = 25º C
TA = -25º C
1
2
IZ - ZENER CURRENT (mA)
Figure 3. 3.3 V Zener Voltage vs. Temperature
5
10
I Z - ZENER CURRENT (mA)
20
30
Figure 4. 5.1 V Zener Voltage vs. Temperature
40
V Z = 12.0V
20
TA = 125º C
5 TA = 100º C
2.0
V Z = 33.0V
TA = 125º C
TA = 100º C
V Z - ZENER VOLTAGE (V)
15
10
V Z = 5.1V
4.5
2.5
1
0.5
1
2
5
I Z - ZENER CURRENT (mA)
5.5
o
3.0
0.2
Figure 2. Zener Current vs. Zener Impedance
4.5
3.5
V Z = 33.0V
2
1
0.1
Figure 1. Zener Current vs. Zener Voltage
V Z - ZENER VOLTAGE (V)
TA = 25º C
V Z = 5.1V
V Z = 33.0V
TA = 125º C
35
10 T = -25º C
A
TA = 25º C
TA = 85º C
TA = 100 º C
30 TA = -25º C
5
T A = 25º C
TA = 85º C
25
0
1
2
5
10
I Z - ZENER CURRENT (mA)
20
20
30
Figure 5. 12 V Zener Voltage vs. Zener Temperature
© 2001 Fairchild Semiconductor Corporation
BZX84C3V3 - BZX84C33 Rev. 1.10
1
2
5
10
I Z - ZENER CURRENT (mA)
20
30
Figure 6. 33 V Zener Voltage vs. Zener Temperature
www.fairchildsemi.com
4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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