BZX84C3V3LT3G

DATA SHEET www.onsemi.com Zener Voltage Regulators 250 mW SOT−23 Surface Mount BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series SOT−23 CASE 318 STYLE 8 3 Cathode MARKING DIAGRAM This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. XXXMG G 1 Features • • • • • • • • 1 Anode 250 mW Rating on FR−4 or FR−5 Board Zener Breakdown Voltage Range − 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (> 16 kV) per Human Body Model Tight Tolerance Series Available (See Page 4) SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily Solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: XXX M G (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BZX84CxxxLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZBZX84CxxxLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel BZX84CxxxLT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SZBZX84CxxxLT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel BZX84BxxxLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZBZX84BxxxLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel BZX84BxxxLT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SZBZX84BxxxLT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 = Device Code = Date Code* = Pb−Free Package †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2016 August, 2021 − Rev. 23 1 DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. Publication Order Number: BZX84C2V4LT1/D BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series MAXIMUM RATINGS Rating Symbol Total Power Dissipation on FR−5 Board, (Note 1) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient PD RqJA PD Max Unit 250 2.0 500 mW mW/°C °C/W mW mW/°C °C/W °C Total Power Dissipation on Alumina Substrate, (Note 2) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient RqJA 300 2.4 417 Junction and Storage Temperature Range TJ, Tstg −65 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 X 0.75 X 0.62 in. 2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina. ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF C IF Parameter Symbol QVZ I VZ VR IR VF IZT Maximum Temperature Coefficient of VZ Zener Voltage Regulator Max. Capacitance @ VR = 0 and f = 1 MHz www.onsemi.com 2 V BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) (Devices listed in bold, italic are onsemi Preferred devices.) VZ1 (Volts) @ IZT1 = 5 mA (Note 3) Device Marking Min Nom Max ZZT1 (W) @ IZT1 = 5 mA BZX84C2V4LT1G Z11 2.2 2.4 2.6 BZX84C2V7LT1G Z12 2.5 2.7 2.9 BZX84C3V0LT1G Z13 2.8 3 BZX84C3V3LT1G Z14 3.1 BZX84C3V6LT1G Z15 3.4 BZX84C3V9LT1G Z16 BZX84C4V3LT1G BZX84C4V7LT1/T3G VZ2 (V) @ IZT2 = 1 mA (Note 3) Min Max ZZT2 (W) @ IZT2 = 1 mA 100 1.7 2.1 100 1.9 2.4 3.2 95 2.1 3.3 3.5 95 3.6 3.8 90 3.7 3.9 4.1 W9 4 4.3 Z1 4.4 4.7 BZX84C5V1LT1/T3G Z2 4.8 BZX84C5V6LT1/T3G Z3 5.2 BZX84C6V2LT1/T3G Z4 BZX84C6V8LT1/T3G BZX84C7V5LT1G VZ3 (V) @ IZT3 = 20 mA (Note 3) Min Max ZZT3 (W) @ IZT3 = 20 mA 600 2.6 3.2 50 600 3 3.6 50 2.7 600 3.3 3.9 2.3 2.9 600 3.6 2.7 3.3 600 3.9 90 2.9 3.5 600 4.6 90 3.3 4 5 80 3.7 4.7 5.1 5.4 60 4.2 5.3 5.6 6 40 4.8 6 5.8 6.2 6.6 10 5.6 Z5 6.4 6.8 7.2 15 Z6 7 7.5 7.9 15 BZX84C8V2LT1G Z7 7.7 8.2 8.7 BZX84C9V1LT1/T3G Z8 8.5 9.1 BZX84C10LT1G Z9 9.4 10 BZX84C11LT1G Y1 10.4 11 BZX84C12LT1G Y2 11.4 BZX84C13LT1G Y3 12.4 BZX84C15LT1/T3G Y4 BZX84C16LT1G BZX84C18LT1/T3G Max Reverse Leakage Current qVZ (mV/k) @ IZT1 = 5 mA VR Volts Min Max C (pF) @ VR = 0 f = 1 MHz 50 1 −3.5 0 450 20 1 −3.5 0 450 50 10 1 −3.5 0 450 4.2 40 5 1 −3.5 0 450 4.5 40 5 1 −3.5 0 450 4.1 4.7 30 3 1 −3.5 −2.5 450 600 4.4 5.1 30 3 1 −3.5 0 450 500 4.5 5.4 15 3 2 −3.5 0.2 260 480 5 5.9 15 2 2 −2.7 1.2 225 400 5.2 6.3 10 1 2 −2.0 2.5 200 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 BZX84C20LT1G Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85 BZX84C22LT1G Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85 BZX84C24LT1G Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 Device* VZ1 Below @ IZT1 = 2 mA VZ2 Below @ IZT2 = 0.1 mA VZ3 Below @ IZT3 = 10 mA Device Marking Min Nom Max ZZT1 Below @ IZT1 = 2 mA Min Max ZZT2 Below @ IZT4 = 0.5 mA Min Max ZZT3 Below @ IZT3 = 10 mA BZX84C27LT1G Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 BZX84C30LT1G Y11 28 30 32 80 27.8 32 300 28.1 32.4 BZX84C33LT1/T3G Y12 31 33 35 80 30.8 35 325 31.1 BZX84C36LT1G Y13 34 36 38 90 33.8 38 350 34.1 BZX84C39LT1G Y14 37 39 41 130 36.7 41 350 BZX84C43LT1G Y15 40 43 46 150 39.7 46 BZX84C47LT1G Y16 44 47 50 170 43.7 50 BZX84C51LT1G Y17 48 51 54 180 47.6 BZX84C56LT1G Y18 52 56 60 200 51.5 BZX84C62LT1G Y19 58 62 66 215 BZX84C68LT1G Y20 64 68 72 BZX84C75LT1G Y21 70 75 79 Device* IR mA @ Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA VR (V) Min Max C (pF) @ VR = 0 f = 1 MHz 0.05 18.9 21.4 25.3 70 50 0.05 21 24.4 29.4 70 35.4 55 0.05 23.1 27.4 33.4 70 38.4 60 0.05 25.2 30.4 37.4 70 37.1 41.5 70 0.05 27.3 33.4 41.2 45 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. *Includes SZ-prefix devices where applicable. www.onsemi.com 3 IR mA @ BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) Device Device Marking VZ (Volts) @ IZT = 5 mA (Note 4) Max Reverse Leakage Current ZZT (W) @ IZT = 5 mA (Note 4) IR mA Min Nom Max Max @ VR qVZ (mV/k) @ IZT = 5 mA Volts Min Max C (pF) @ VR =0, f = 1 MHz BZX84B3V3LT1G T2A 3.23 3.3 3.37 95 5 1 −3.5 0 450 BZX84B4V7LT1G T10 4.61 4.7 4.79 80 3 2 −3.5 0.2 260 BZX84B5V1LT1G T11 5.00 5.1 5.20 60 2 2 −2.7 1.2 225 BZX84B5V6LT1G T12 5.49 5.6 5.71 40 1 2 −2 2.5 200 BZX84B6V2LT1G T13 6.08 6.2 6.32 10 3 4 0.4 3.7 185 BZX84B6V8LT1G T14 6.66 6.8 6.94 15 2 4 1.2 4.5 155 BZX84B7V5LT1G T15 7.35 7.5 7.65 15 1 5 2.5 5.3 140 BZX84B8V2LT1G T16 8.04 8.2 8.36 15 0.7 5 3.2 6.2 135 BZX84B9V1LT1G, T3G T17 8.92 9.1 9.28 15 0.5 6 3.8 7 130 BZX84B10LT1G T2E 9.8 10 10.2 20 0.2 7 4.5 8 130 BZX84B12LT1G T18 11.8 12 12.2 25 0.1 8 6 10 130 BZX84B15LT1G T22 14.7 15 15.3 30 0.05 10.5 9.2 13 110 BZX84B16LT1G T19 15.7 16 16.3 40 0.05 11.2 10.4 14 105 BZX84B18LT1G T20 17.6 18 18.4 45 0.05 12.6 12.4 16 100 BZX84B22LT1G T24 21.6 22 22.4 55 0.05 15.4 16.4 20 85 BZX84B24LT1G T25 23.5 24 24.5 70 0.05 16.8 18.4 22 80 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) Device* BZX84B27LT1G Device Marking T27 VZ (Volts) @ IZT = 2 mA (Note 4) ZZT (W) @ IZT = 2 mA (Note 4) Min Nom Max Max 26.5 27 27.5 80 *Includes SZ-prefix devices where applicable. www.onsemi.com 4 Max Reverse Leakage Current IR mA 0.05 @ qVZ (mV/k) @ IZT = 2 mA Volts Min Max C (pF) @ VR =0, f = 1 MHz 18.9 21.4 25.3 70 VR BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series 8 100 7 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 TYPICAL TC VALUES VZ @ IZT 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 IZ = 1 mA TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE ( Ω ) 1000 100 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0.6 0°C 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage www.onsemi.com 5 1.1 1.2 BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT (μA) TA = 25°C 100 BIAS AT 50% OF VZ NOM 10 1 1 100 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 10 1 +150°C 0.1 0.01 0.001 +25°C 0.0001 -55°C 0.00001 0 10 Figure 5. Typical Capacitance 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) Figure 6. Typical Leakage Current 100 100 TA = 25°C I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) TA = 25°C 10 1 0.1 0.01 80 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 1 0.1 0.01 12 10 10 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) www.onsemi.com 6 90 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative