BZX84C3V9

BZX84C3V3 - BZX84C33 Zeners Tolerance: C = 5% CONNECTION DIAGRAM 3 3 2 1 1 2 NC SOT-23 Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit IFRM Repetitive Peak Forward Current 250 mA IZRM Repetitive Peak Working Current 250 mA PD Parameter Power Dissipation Referencing RθJA, TA = 25°C 250 Referencing ψJL, TL = 25°C 550 mW RθJA Junction-to-Ambient Thermal Resistance(3) 465 °C/W ψJL Junction-to-Lead Thermal Characteristics (with reference to Cathode) 220 °C/W TSTG TJ Storage Temperature Range -55 to +150 °C Operating Junction Temperature -55 to +150 °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. 3. Device mounted on FR-4 PCB, board size = 76.2 mm x 114.3 mm © 2001 Fairchild Semiconductor Corporation BZX84C3V3 - BZX84C33 Rev. 1.10 www.fairchildsemi.com BZX84C3V3 - BZX84C33 — Zeners November 2015 Values are at TA = 25°C unless otherwise noted. IZ = 5.0 mA Device Mark VZ (V) Min. Max. IZ = 1.0 mA VZ (V) ZZ (Ω) Min. Max. IZ = 20 mA ZZ (Ω) VZ (V) Min. Max. ZZ (Ω) BZX84C3V3 Z14 3.1 3.5 95 2.3 2.9 600 3.6 4.2 40 BZX84C3V6 Z15 3.4 3.8 90 2.7 3.3 600 3.9 4.5 40 BZX84C3V9 Z16 3.7 4.1 90 2.9 3.5 600 4.1 4.7 30 BZX84C4V3 Z17 4.0 4.6 90 3.3 4.0 600 4.4 5.1 30 BZX84C4V7 Z1 4.4 5.0 80 3.7 4.7 500 4.5 5.4 15 BZX84C5V1 Z2 4.8 5.4 60 4.2 5.3 480 5.0 5.9 15 BZX84C5V6 Z3 5.2 6.0 40 4.8 6.0 400 5.2 6.3 10 BZX84C6V2 Z4 5.8 6.6 10 5.6 6.6 150 5.8 6.8 6 BZX84C6V8 Z5 6.4 7.2 15 6.3 7.2 80 6.4 7.4 6 BZX84C7V5 Z6 7.0 7.9 15 6.9 7.9 80 7.0 8.0 6 BZX84C8V2 Z7 7.7 8.7 15 7.6 8.7 80 7.7 8.8 6 BZX84C9V1 Z8 8.5 9.6 15 8.4 9.6 100 8.5 9.7 8 BZX84C10 Z9 9.4 10.6 20 9.3 10.6 150 9.4 10.7 10 BZX84C11 Y1 10.4 11.6 20 10.2 11.6 150 10.4 11.8 10 BZX84C12 Y2 11.4 12.7 25 11.2 12.7 150 11.4 12.9 10 BZX84C13 Y3 12.4 14.1 30 12.3 14.0 170 12.5 14.2 15 BZX84C15 Y4 13.8 15.6 30 13.7 15.5 200 13.9 15.7 20 BZX84C16 Y5 15.3 17.1 40 15.2 17.0 200 15.4 17.2 20 BZX84C18 Y6 16.8 19.1 45 16.7 19.0 225 16.9 19.2 20 BZX84C20 Y7 18.8 21.2 55 18.7 21.1 225 18.9 21.4 20 BZX84C22 Y8 20.8 23.3 55 20.7 23.2 250 20.9 23.4 25 BZX84C24 Y9 22.8 25.6 70 22.7 25.5 250 22.9 25.7 25 BZX84C27 Y10 25.1 28.9 80 25.0 28.9 300 25.2 29.3 45 BZX84C30 Y11 28.0 32.0 80 27.8 32.0 300 28.1 32.4 50 BZX84C33 Y12 31.0 35.0 80 30.8 35.0 325 31.1 35.4 55 VF Forward Voltage = 0.9 V Maximum at IF =10 mA for all BZX84 series © 2001 Fairchild Semiconductor Corporation BZX84C3V3 - BZX84C33 Rev. 1.10 www.fairchildsemi.com 2 BZX84C3V3 - BZX84C33 — Zeners Electrical Characteristics Values are at TA = 25°C unless otherwise noted. DVZ / Dt at 5.0 mA (mV/k) Device VR (V) IR (μA) Cap(4) (pF) Min. Max. BZX84C3V3 1.0 5.0 450 -3.5 0.0 BZX84C3V6 1.0 5.0 450 -3.5 0.0 BZX84C3V9 1.0 5.0 450 -3.5 0.0 BZX84C4V3 1.0 5.0 450 -3.5 0.0 BZX84C4V7 2.0 3 260 -3.5 0.2 BZX84C5V1 2.0 2 225 -2.7 1.2 BZX84C5V6 2.0 1 200 -2.0 2.5 BZX84C6V2 4.0 3 185 0.4 3.7 BZX84C6V8 4.0 2 155 1.2 4.5 BZX84C7V5 5.0 1 140 2.5 5.3 BZX84C8V2 5.0 0.7 135 3.2 6.2 BZX84C9V1 6.0 0.5 130 3.8 7.0 BZX84C10 7.0 0.2 130 4.5 8.0 BZX84C11 8.0 0.1 130 5.4 9.0 BZX84C12 8.0 0.1 130 6.0 10 BZX84C13 8.0 0.1 120 7.0 11 BZX84C15 10.5 0.05 110 9.2 13 BZX84C16 11.2 0.05 105 10.4 14 BZX84C18 12.6 0.05 100 12.4 16 BZX84C20 14 0.05 85 14.4 18 BZX84C22 15.4 0.05 85 16.4 20 BZX84C24 16.8 0.05 80 18.4 22 BZX84C27 18.9 0.05 70 21.4 25.3 BZX84C30 21 0.05 70 24.4 29.4 BZX84C33 23.1 0.05 70 27.4 33.4 Note: 4. Capacitance at VR= 0.0 V, f = 1.0 MHz. © 2001 Fairchild Semiconductor Corporation BZX84C3V3 - BZX84C33 Rev. 1.10 www.fairchildsemi.com 3 BZX84C3V3 - BZX84C33 — Zeners Electrical Characteristics (Continued) BZX84C3V3 - BZX84C33 — Zeners Typical Performance Characteristics 5000 35 25 Z Z - IMPEDANCE (ohms) V Z - ZENER VOLTAGE (V) 30 TA = 25º C 20 15 V Z = 12.0V 10 V Z = 3.3V V Z = 5.1V 5 1 2 5 10 I Z- ZENER CURRENT (mA) 20 2000 1000 500 V Z = 3.3V 200 100 50 20 10 V Z = 12.0V 5 30 6 V Z - ZENER VOLTAGE (V) VZ - ZENER VOLTAGE (V) VZ= 3.3 V 4.0 o TA= -25 C TA= 25 C o TA= 85 C o TA= 100 C o TA= 125 C 4 10 TA = 85º C T A = 25º C TA = -25º C 1 2 IZ - ZENER CURRENT (mA) Figure 3. 3.3 V Zener Voltage vs. Temperature 5 10 I Z - ZENER CURRENT (mA) 20 30 Figure 4. 5.1 V Zener Voltage vs. Temperature 40 V Z = 12.0V 20 TA = 125º C 5 TA = 100º C 2.0 V Z = 33.0V TA = 125º C TA = 100º C V Z - ZENER VOLTAGE (V) 15 10 V Z = 5.1V 4.5 2.5 1 0.5 1 2 5 I Z - ZENER CURRENT (mA) 5.5 o 3.0 0.2 Figure 2. Zener Current vs. Zener Impedance 4.5 3.5 V Z = 33.0V 2 1 0.1 Figure 1. Zener Current vs. Zener Voltage V Z - ZENER VOLTAGE (V) TA = 25º C V Z = 5.1V V Z = 33.0V TA = 125º C 35 10 T = -25º C A TA = 25º C TA = 85º C TA = 100 º C 30 TA = -25º C 5 T A = 25º C TA = 85º C 25 0 1 2 5 10 I Z - ZENER CURRENT (mA) 20 20 30 Figure 5. 12 V Zener Voltage vs. Zener Temperature © 2001 Fairchild Semiconductor Corporation BZX84C3V3 - BZX84C33 Rev. 1.10 1 2 5 10 I Z - ZENER CURRENT (mA) 20 30 Figure 6. 33 V Zener Voltage vs. Zener Temperature www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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