C122B1

C122F1, C122B1 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features http://onsemi.com • Glass Passivated Junctions and Center Gate Fire for Greater • • • Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 200 Volts Pb−Free Packages are Available* SCRs 8 AMPERES RMS 50 thru 200 VOLTS G A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = 25 to 100°C, Sine Wave, 50 to 60 Hz; Gate Open) C122F1 C122B1 On-State RMS Current (180° Conduction Angles; TC = 75°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TC = 75°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width = 10 ms, TC = 70°C) Forward Average Gate Power (t = 8.3 ms, TC = 70°C) Forward Peak Gate Current (Pulse Width = 10 ms, TC = 70°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 200 IT(RMS) ITSM 8.0 90 A A 1 2 TO−220AB CASE 221A STYLE 3 3 Value Unit V 4 MARKING DIAGRAM A YW C122F1G AKA I2t PGM PG(AV) IGM TJ Tstg 34 5.0 0.5 2.0 −40 to +125 −40 to +150 A2s W W A A Y W C122F1 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity PIN ASSIGNMENT °C °C 1 2 3 4 Cathode Anode Gate Anode Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device C122F1 C122F1G C122B1 Package TO220AB TO220AB (Pb−Free) TO220AB TO220AB (Pb−Free) Shipping 500 Units / Box 500 Units / Box 500 Units / Box 500 Units / Box *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 C122B1G 1 August, 2005 − Rev. 3 Publication Order Number: C122F1/D C122F1, C122B1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds Symbol RqJC RqJA TL Max 1.8 62.5 260 Unit °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) ON CHARACTERISTICS Peak On−State Voltage (Note 2) (ITM = 16 A Peak, TC = 25°C) Gate Trigger Current (Continuous dc) (VAK = 12 V, RL = 100 W) Gate Trigger Voltage (Continuous dc) (VAK = 12 V, RL = 100 W) Gate Non−Trigger Voltage (Continuous dc) (VAK = 12 V, RL = 100 W, TC = 125°C) Holding Current (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = 25°C TC = −40°C Turn-Off Time (VD = Rated VDRM) (ITM = 8 A, IR = 8 A) DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of Off−State Voltage (VAK = Rated VDRM, Exponential Waveform, Gate Open, TC = 100°C) 2. Pulse Test: Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%. dv/dt − 50 − V/ms TC = 25°C TC = −40°C TC = 25°C TC = −40°C VTM IGT − − VGT − − VGD IH − − tq − − − 50 30 60 − ms 0.2 − − − 1.5 2.0 − V mA − − 25 40 V − − 1.83 V mA TC = 25°C TC = 125°C IDRM, IRRM − − − − 10 0.5 mA mA Symbol Min Typ Max Unit http://onsemi.com 2 C122F1, C122B1 Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode − + Voltage IDRM at VDRM Forward Blocking Region (off state) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ° C) ( 100 TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ° C) ( 100 95 90 85 80 75 70 65 60 0 CONDUCTION ANGLE = 60° RESISTIVE OR INDUCTIVE LOAD. 50 TO 400 Hz 1 2 3 4 5 120° 180° 0 CONDUCTION CONDUCTION ANGLE ANGLE 90 360 ONE CYCLE OF SUPPLY FREQUENCY 80 DC CONDUCTION ANGLE = 30° 60° 90° 120° 180° 0 CONDUCTION ANGLE 360 240° 360° 70 60 0 1 2 3 4 5 6 7 8 6 7 8 IT(AV), AVERAGE ON−STATE FORWARD CURRENT (AMPERES) IT(AV), AVERAGE ON−STATE CURRENT (AMPERES) Figure 1. Current Derating (Half−Wave) P(AV), AVERAGE ON−STATE POWER DISSIPATION (WATTS) TC , AVERAGE ON−STATE POWER DISSIPATION (WATTS) Figure 2. Current Derating (Full−Wave) 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 CONDUCTION ANGLE 30° 60° 180° 90° 120° RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz DC 10 8 6 4 0 240° 180° 120° CONDUCTION ANGLE = 60° 360° CONDUCTION CONDUCTION ANGLE ANGLE 360 ONE CYCLE OF SUPPLY FREQUENCY 2 0 RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz 0 1 2 3 4 5 6 7 8 IT(AV), AVERAGE ON−STATE CURRENT (AMPERES) IT(AV), AVERAGE ON−STATE CURRENT (AMPERES) Figure 3. Maximum Power Dissipation (Half−Wave) Figure 4. Maximum Power Dissipation (Full−Wave) http://onsemi.com 3 C122F1, C122B1 PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE AA −T− B F C SEATING PLANE T S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 4 Q 123 A U K H Z L V G D N J R STYLE 3: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 4 C122F1/D