CAT25010/20/40
1K/2K/4K SPI Serial CMOS EEPROM
FEATURES
■ 1,000,000 program/erase cycles
■ 10 MHz SPI compatible
■ 100 year data retention
■ 1.8 to 5.5 volt operation
■ Self-timed write cycle
■ Hardware and software protection
■ 8-Pin DIP/SOIC, 8-Pin TSSOP and 8-Pin MSOP
■ Low power CMOS technology
■ 16-byte page write buffer
■ SPI modes (0,0 & 1,1)
■ Block write protection
■ Commercial, industrial, automotive and extended
– Protect 1/4, 1/2 or all of EEPROM array
temperature ranges
DESCRIPTION
The CAT25010/20/40 is a 1K/2K/4K Bit SPI Serial
CMOS EEPROM internally organized as 128x8/256x8/
512x8 bits. Catalyst’s advanced CMOS Technology
substantially reduces device power requirements. The
CAT25010/20/40 features a 16-byte page write buffer.
The device operates via the SPI bus serial interface and
is enabled though a Chip Select (CS). In addition to the
Chip Select, the clock input (SCK), data in (SI) and data
out (SO) are required to access the device. The HOLD
pin may be used to suspend any serial communication
without resetting the serial sequence. The CAT25010/
20/40 is designed with software and hardware write
protection features including Block Write protection. The
device is available in 8-pin DIP, 8-pin SOIC, 8-pin MSOP
and 8-pin TSSOP packages.
PIN CONFIGURATION
BLOCK DIAGRAM
SOIC Package (S, V, GV)
CS
1
8
SO
2
3
4
7
6
5
WP
VSS
VCC
HOLD
SCK
8
7
6
5
8
7
6
5
SENSE AMPS
SHIFT REGISTERS
VCC
HOLD
SCK
SI
WORD ADDRESS
BUFFERS
TSSOP Package (U, Y, GY)
VCC
HOLD
SCK
SI
1
2
3
4
CS
SO
WP
VSS
1
2
3
8
7
6
4
5
VCC
HOLD
SCK
SI
PIN FUNCTIONS
Pin Name
Function
SO
Serial Data Output
SCK
Serial Clock
WP
Write Protect
VCC
+1.8V to +5.5V Power Supply
VSS
Ground
CS
Chip Select
SI
Serial Data Input
HOLD
Suspends Serial Input
NC
No Connect
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
SO
SI
CS
WP
HOLD
SCK
I/O
CONTROL
SPI
CONTROL
LOGIC
BLOCK
PROTECT
LOGIC
CONTROL LOGIC
1
2
3
4
CS
SO
WP
VSS
SI
DIP Package (P, L, GL)
CS
SO
WP
VSS
MSOP Package (R, Z, GZ)
XDEC
COLUMN
DECODERS
E2PROM
ARRAY
DATA IN
STORAGE
HIGH VOLTAGE/
TIMING CONTROL
STATUS
REGISTER
1
25C128 F02
Doc. No. 1006, Rev. M
CAT25010/20/40
ABSOLUTE MAXIMUM RATINGS*
*COMMENT
Temperature Under Bias ................. –55°C to +125°C
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum
rating for extended periods may affect device performance and reliability.
Storage Temperature ....................... –65°C to +150°C
Voltage on any Pin with
Respect to VSS(1) .................. –2.0V to +VCC +2.0V
VCC with Respect to VSS ................................ –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current(2) ........................ 100 mA
RELIABILITY CHARACTERISTICS
Symbol
Parameter
NEND(3)
Endurance
TDR(3)
VZAP
(3)
ILTH(3)(4)
Min.
Typ.
Max.
Units
1,000,000
Cycles/Byte
Data Retention
100
Years
ESD Susceptibility
2000
Volts
Latch-up
100
mA
D.C. OPERATING CHARACTERISTICS
VCC = +1.8V to +5.5V, unless otherwise specified.
Limits
Symbol
Parameter
Min.
Typ.
Max.
Units
Test Conditions
ICC1
Power Supply Current
(Operating Write)
5
mA
VCC = 5V @ 5MHz
SO=open; CS=Vss
ICC2
Power Supply Current
(Operating Read)
3
mA
VCC = 5.5V
FCLK = 5MHz
ISB(6)
Power Supply Current
(Standby)
1
µA
CS = VCC
VIN = VSS or VCC
ILI
Input Leakage Current
2
µA
VIN = VSS or VCC
ILO
Output Leakage Current
3
µA
VOUT = 0V to VCC,
CS = 0V
VIL(5)
Input Low Voltage
-1
VCC x 0.3
V
VIH(5)
Input High Voltage
VCC x 0.7
VCC + 0.5
V
VOL1
Output Low Voltage
0.4
V
VOH1
Output High Voltage
VOL2
Output Low Voltage
VOH2
Output High Voltage
VCC - 0.8
V
0.2
VCC-0.2
2.7V≤VCC
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