CAT25C08, CAT25C16
8K/16K SPI Serial CMOS EEPROM
FEATURES
DESCRIPTION
■ 10 MHz SPI compatible
The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS
EEPROM internally organized as 1024x8/2048x8 bits.
Catalyst’s advanced CMOS Technology substantially
reduces device power requirements. The CAT25C08/
16 features a 32-byte page write buffer. The device
operates via the SPI bus serial interface and is enabled
though a Chip Select (CS). In addition to the Chip Select,
the clock input (SCK), data in (SI) and data out (SO) are
required to access the device. The HOLD pin may be
used to suspend any serial communication without
resetting the serial sequence. The CAT25C08/16 is
designed with software and hardware write protection
features including Block Write protection. The device is
available in 8-pin DIP, 8-pin SOIC and 8-pin TSSOP
packages.
■ 1.8 to 5.5 volt operation
■ 32-byte page write buffer
■ Hardware and software protection
■ Block write protection
– Protect 1/4, 1/2 or all of EEPROM array
■ Low power CMOS technology
■ SPI modes (0,0 & 1,1)
■ Industrial temperature range
■ 1,000,000 program/erase cycles
■ 100 year data retention
■ Self-timed write cycle
■ RoHS compliant
“
”&“
”
8-pin PDIP, SOIC and TSSOP packages
available
PIN CONFIGURATION
FUNCTIONAL SYMBOL
PDIP (P, L)
SOIC (S, V)
TSSOP (U, Y)
CS
1
8
VCC
SO
2
7
HOLD
WP
3
6
SCK
VSS
4
5
SI
VCC
SI
CS
WP
CAT25C08
CAT25C16
SO
HOLD
SCK
PIN FUNCTIONS
Pin Name
Function
SO
Serial Data Output
SCK
Serial Clock
WP
Write Protect
VCC
+1.8V to +5.5V Power Supply
VSS
Ground
CS
Chip Select
SI
Serial Data Input
HOLD
Suspends Serial Input
© 2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
VSS
1
Doc. No. 1016, Rev. A
CAT25C08/16
ABSOLUTE MAXIMUM RATINGS*
*COMMENT
Temperature Under Bias ................. –55°C to +125°C
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum
rating for extended periods may affect device performance and reliability.
Storage Temperature ....................... –65°C to +150°C
Voltage on any Pin with
Respect to VSS(1) .................. –2.0V to +VCC +2.0V
VCC with Respect to VSS ................................ –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current(2) ........................ 100 mA
RELIABILITY CHARACTERISTICS
Symbol
Parameter
NEND(3)
Endurance
TDR(3)
VZAP
(3)
ILTH(3)(4)
Min.
Typ.
Max.
Units
1,000,000
Cycles/Byte
Data Retention
100
Years
ESD Susceptibility
2000
Volts
Latch-up
100
mA
D.C. OPERATING CHARACTERISTICS
VCC = +1.8V to +6.0V, unless otherwise specified.
Limits
Symbol
Parameter
Min.
Typ.
Max.
Units
Test Conditions
ICC1
Power Supply Current
(Operating Write)
5
mA
VCC = 5V @ 5MHz
SO=open; CS=Vss
ICC2
Power Supply Current
(Operating Read)
3
mA
VCC = 5.5V
FCLK = 5MHz
ISB(6)
Power Supply Current
(Standby)
1
µA
CS = VCC
VIN = VSS or VCC
ILI
Input Leakage Current
2
µA
ILO
Output Leakage Current
3
µA
VIL(5)
Input Low Voltage
-1
VCC x 0.3
V
(5)
Input High Voltage
VCC x 0.7
VCC + 0.5
V
0.4
V
VIH
VOL1
Output Low Voltage
VOH1
Output High Voltage
VOL2
Output Low Voltage
VOH2
Output High Voltage
VCC - 0.8
V
0.2
VCC-0.2
VOUT = 0V to VCC,
CS = 0V
2.7V≤VCC
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