CAT93C57LET3E

CAT93C56, CAT93C57 2-Kb Microwire Serial CMOS EEPROM Description The CAT93C56/57 is a 2−kb CMOS Serial EEPROM device which is organized as either 128 registers of 16 bits (ORG pin at VCC) or 256 registers of 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAT93C56/57 features sequential read and self−timed internal write with auto−clear. On−chip Power−On Reset circuitry protects the internal logic against powering up in the wrong state. Features http://onsemi.com SOIC−8 V or W SUFFIX CASE 751BD SOIC−8 EIAJ X SUFFIX CASE 751BE TDFN−8 VP2 SUFFIX CASE 511AK • • • • • • • • • • • • High Speed Operation: 2 MHz 1.8 V to 5.5 V Supply Voltage Range Selectable x8 or x16 Memory Organization Sequential Read Software Write Protection Power−up Inadvertant Write Protection Low Power CMOS Technology 1,000,000 Program/Erase Cycles 100 Year Data Retention Industrial and Extended Temperature Ranges 8−pin PDIP, SOIC, TSSOP and 8−pad TDFN Packages These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant VCC PDIP−8 L SUFFIX CASE 646AA TDFN−8 ZD4 SUFFIX CASE 511AL TSSOP−8 Y SUFFIX CASE 948AL PIN CONFIGURATIONS CS SK DI DO 1 VCC NC ORG GND PDIP (L), SOIC (V, X), TSSOP (Y), TDFN (VP2, ZD4*) NC VCC CS SK 1 ORG GND DO DI * TDFN 3x3 mm (ZD4) and SOIC (W) rotated pin−out packages are available for CAT93C57 and CAT93C56, Rev. E only (not recommended for new designs of CAT93C56) ORG CS SK DI CAT93C56 CAT93C57 DO SOIC (W*) (Top Views) PIN FUNCTION Pin Name Function Chip Select Clock Input Serial Data Input Serial Data Output Power Supply Ground Memory Organization No Connection CS SK DI DO VCC GND ORG NC GND Figure 1. Functional Symbol NOTE: When the ORG pin is connected to VCC, the x16 organization is selected. When it is connected to ground, the x8 pin is selected. If the ORG pin is left unconnected, then an internal pullup device will select the x16 organization. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 16 of this data sheet. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 18 1 Publication Order Number: CAT93C56/D CAT93C56, CAT93C57 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Storage Temperature Voltage on Any Pin with Respect to Ground (Note 1) Ratings −65 to +150 −0.5 to +6.5 Units °C V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns. Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol NEND (Note 3) TDR Endurance Data Retention Parameter Min 1,000,000 100 Units Program / Erase Cycles Years 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100 and JEDEC test methods. 3. Block Mode, VCC = 5 V, 25°C Table 3. D.C. OPERATING CHARACTERISTICS, CAT93C56, Die Rev. G – New Product (VCC = +1.8 V to +5.5 V, TA=−40°C to +125°C unless otherwise specified.) Symbol ICC1 ICC2 ISB1 Parameter Power Supply Current (Write) Power Supply Current (Read) Power Supply Current (Standby) (x8 Mode) Power Supply Current (Standby) (x16 Mode) Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Output Low Voltage Output High Voltage Test Conditions fSK = 1 MHz, VCC = 5.0 V fSK = 1 MHz, VCC = 5.0 V VIN = GND or VCC, CS = GND ORG = GND VIN = GND or VCC, CS = GND ORG = Float or VCC VIN = GND to VCC VOUT = GND to VCC, CS = GND 4.5 V v VCC < 5.5 V 4.5 V v VCC < 5.5 V 1.8 V v VCC < 4.5 V 1.8 V v VCC < 4.5 V 4.5 V v VCC < 5.5 V, IOL = 2.1 mA 4.5 V v VCC < 5.5 V, IOH = −400 mA 1.8 V v VCC < 4.5 V, IOL = 1 mA 1.8 V v VCC < 4.5 V, IOH = −100 mA VCC − 0.2 2.4 0.2 TA = −40°C to +85°C TA = −40°C to +125°C TA = −40°C to +85°C TA = −40°C to +125°C TA = −40°C to +85°C TA = −40°C to +125°C TA = −40°C to +85°C TA = −40°C to +125°C −0.1 2 0 VCC x 0.7 Min Max 1 500 2 4 1 2 1 2 1 2 0.8 VCC + 1 VCC x 0.2 VCC + 1 0.4 V V V V V V V V mA mA mA Units mA mA mA ISB2 ILI ILO VIL1 VIH1 VIL2 VIH2 VOL1 VOH1 VOL2 VOH2 http://onsemi.com 2 CAT93C56, CAT93C57 Table 4. D.C. OPERATING CHARACTERISTICS, CAT93C56/57, Die Rev. E – Mature Product (CAT93C56, Rev. E – NOT RECOMMENDED FOR NEW DESIGNS) (VCC = +1.8 V to +5.5 V, TA=−40°C to +125°C unless otherwise specified.) Symbol ICC1 ICC2 ISB1 ISB2 ILI ILO VIL1 VIH1 VIL2 VIH2 VOL1 VOH1 VOL2 VOH2 Parameter Power Supply Current (Write) Power Supply Current (Read) Power Supply Current (Standby) (x8 Mode) Power Supply Current (Standby) (x16 Mode) Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Output Low Voltage Output High Voltage Test Conditions fSK = 1 MHz, VCC = 5.0 V fSK = 1 MHz, VCC = 5.0 V VIN = GND or VCC, CS = GND ORG = GND VIN = GND or VCC, CS = GND ORG = Float or VCC VIN = GND to VCC VOUT = GND to VCC, CS = GND 4.5 V v VCC < 5.5 V 4.5 V v VCC < 5.5 V 1.8 V v VCC < 4.5 V 1.8 V v VCC < 4.5 V 4.5 V v VCC < 5.5 V, IOL = 2.1 mA 4.5 V v VCC < 5.5 V, IOH = −400 mA 1.8 V v VCC < 4.5 V, IOL = 1 mA 1.8 V v VCC < 4.5 V, IOH = −100 mA VCC − 0.2 2.4 0.2 −0.1 2 0 VCC x 0.7 Min Max 3 500 10 10 1 1 0.8 VCC + 1 VCC x 0.2 VCC + 1 0.4 Units mA mA mA mA mA mA V V V V V V V V Table 5. PIN CAPACITANCE (TA = 25°C, f = 1 MHz, VCC = 5 V) Symbol COUT (Note 4) CIN (Note 4) Test Output Capacitance (DO) Input Capacitance (CS, SK, DI, ORG) Conditions VOUT = 0 V VIN = 0 V Min Typ Max 5 5 Units pF pF 4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100 and JEDEC test methods. http://onsemi.com 3 CAT93C56, CAT93C57 Table 6. A.C. CHARACTERISTICS (Note 5), CAT93C56, Die Rev. G – New Product (VCC = +1.8V to +5.5V, TA = −40°C to +125°C, unless otherwise specified.) Limits Symbol tCSS tCSH tDIS tDIH tPD1 tPD0 tHZ (Note 6) tEW tCSMIN tSKHI tSKLOW tSV SKMAX CS Setup Time CS Hold Time DI Setup Time DI Hold Time Output Delay to 1 Output Delay to 0 Output Delay to High−Z Program/Erase Pulse Width Minimum CS Low Time Minimum SK High Time Minimum SK Low Time Output Delay to Status Valid Maximum Clock Frequency DC 0.25 0.25 0.25 0.25 2000 Parameter Min 50 0 100 100 0.25 0.25 100 5 Max Units ns ns ns ns ms ms ns ms ms ms ms ms kHz Table 7. A.C. CHARACTERISTICS (Note 5), CAT93C56/57, Die Rev. E – Mature Product (CAT93C56 Rev. E − NOT RECOMMENDED FOR NEW DESIGNS) Limits VCC = 1.8 V − 5.5 V Symbol tCSS tCSH tDIS tDIH tPD1 tPD0 tHZ (Note 6) tEW tCSMIN tSKHI tSKLOW tSV SKMAX Parameter CS Setup Time CS Hold Time DI Setup Time DI Hold Time Output Delay to 1 Output Delay to 0 Output Delay to High−Z Program/Erase Pulse Width Minimum CS Low Time Minimum SK High Time Minimum SK Low Time Output Delay to Status Valid Maximum Clock Frequency DC 1 1 1 1 250 DC Min 200 0 400 400 1 1 400 10 0.5 0.5 0.5 0.5 500 DC Max VCC = 2.5 V − 5.5 V Min 100 0 200 200 0.5 0.5 200 10 0.25 0.25 0.25 0.25 1000 Max VCC = 4.5 V − 5.5 V Min 50 0 100 100 0.25 0.25 100 10 Max Units ns ns ns ns ms ms ns ms ms ms ms ms kHz Table 8. POWER−UP TIMING (Notes 6 and 7) Symbol tPUR tPUW Power−up to Read Operation Power−up to Write Operation Parameter Max 1 1 Units ms ms 5. Test conditions according to “A.C. Test Conditions” table. 6. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100 and JEDEC test methods. 7. tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated. http://onsemi.com 4 CAT93C56, CAT93C57 Table 9. A.C. TEST CONDITIONS Input Rise and Fall Times Input Pulse Voltages Timing Reference Voltages Input Pulse Voltages Timing Reference Voltages Output Load ≤ 50 ns 0.4 V to 2.4 V 0.8 V, 2.0 V 0.2 VCC to 0.7 VCC 0.5 VCC 4.5 V v VCC v 5.5 V 4.5 V v VCC v 5.5 V 1.8 V v VCC v 4.5 V 1.8 V v VCC v 4.5 V Current Source IOLmax/IOHmax; CL=100 pF Device Operation The CAT93C56/57 is a 2048−bit nonvolatile memory intended for use with industry standard microprocessors. The CAT93C56/57 can be organized as either registers of 16 bits or 8 bits. When organized as X16, seven 10−bit instructions for 93C57 or seven 11−bit instructions for 93C56 control the reading, writing and erase operations of the device. When organized as X8, seven 11−bit instructions for 93C57 or seven 12−bit instructions for 93C56 control the reading, writing and erase operations of the device. The CAT93C56/57 operates on a single power supply and will generate on chip, the high voltage required during any write operation. Instructions, addresses, and write data are clocked into the DI pin on the rising edge of the clock (SK). The DO pin is normally in a high impedance state except when reading data from the device, or when checking the ready/busy status after a write operation. The serial communication protocol follows the timing shown in Figure 2. The ready/busy status can be determined after the start of internal write cycle by selecting the device (CS high) and polling the DO pin; DO low indicates that the write operation is not completed, while DO high indicates that the device is ready for the next instruction. If necessary, the DO pin may be placed back into a high impedance state during chip select by shifting a dummy “1” into the DI pin. The DO pin will enter the high impedance state on the rising edge of the clock (SK). Placing the DO pin into the high impedance state is recommended in applications where the DI pin and the DO pin are to be tied together to form a common DI/O pin. tSKHI SK tDIS DI tCSS CS VALID tSKLOW tCSH tDIH VALID tDIS DO tPD0, tPD1 DATA VALID tCSMN Figure 2. Synchronous Data Timing http://onsemi.com 5 CAT93C56, CAT93C57 The format for all instructions sent to the device is a logical “1” start bit, a 2−bit (or 4−bit) opcode, 7−bit address (CAT93C57) / 8−bit address (CAT93C56) (an additional bit Table 10. INSTRUCTION SET Instruction READ Device Type 93C56 (Note 8) 93C57 ERASE 93C56 (Note 8) 93C57 WRITE 93C56 (Note 8) 93C57 EWEN 93C56 (Note 8) 93C57 EWDS 93C56 (Note 8) 93C57 ERAL 93C56 (Note 8) 93C57 WRAL 93C56 (Note 8) 93C57 Start Bit 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Address Opcode 10 10 11 11 01 01 00 00 00 00 00 00 00 00 x8 A8−A0 A7−A0 A8−A0 A7−A0 A8−A0 A7−A0 11XXXXXXX 11XXXXXX 00XXXXXXX 00XXXXXX 10XXXXXXX 10XXXXXX 01XXXXXXX 01XXXXXX x16 A7−A0 A6−A0 A7−A0 A6−A0 A7−A0 A6−A0 11XXXXXX 11XXXXX 00XXXXXX 00XXXXX 10XXXXXX 10XXXXX 01XXXXXX 01XXXXX D7−D0 D7−D0 D15−D0 D15−D0 Clear All Addresses Write All Addresses Write Disable D7−D0 D7−D0 D15−D0 D15−D0 x8 Data x16 Comments Read Address AN–A0 Clear Address AN–A0 Write Address AN–A0 Write Enable when organized X8) and for write operations a 16−bit data field (8−bit for X8 organizations). The instruction format is shown in Instruction Set table. 8. Address bit A8 for 256x8 organization and A7 for 128x16 organization are “Don’t Care” bits, but must be kept at either a “1” or “0” for READ, WRITE and ERASE commands. http://onsemi.com 6 CAT93C56, CAT93C57 Read Upon receiving a READ command and an address (clocked into the DI pin), the DO pin of the CAT93C56/57 will come out of the high impedance state and, after sending an initial dummy zero bit, will begin shifting out the data addressed (MSB first). The output data bits will toggle on the rising edge of the SK clock and are stable after the specified time delay (tPD0 or tPD1). For the CAT93C56/57, after the initial data word has been shifted out and CS remains asserted with the SK clock continuing to toggle, the device will automatically increment to the next address and shift out the next data word in a sequential READ mode. As long as CS is continuously asserted and SK continues to toggle, the device will keep incrementing to the next address automatically until it reaches to the end of the address space, then loops back to address 0. In the sequential READ mode, only the initial SK data word is preceeded by a dummy zero bit. All subsequent data words will follow without a dummy zero bit. The READ instruction timing is illustrated in Figure 3. Erase/Write Enable and Disable The CAT93C56/57 powers up in the write disable state. Any writing after power−up or after an EWDS (erase/write disable) instruction must first be preceded by the EWEN (erase/write enable) instruction. Once the write instruction is enabled, it will remain enabled until power to the device is removed, or the EWDS instruction is sent. The EWDS instruction can be used to disable all CAT93C56/57 write and erase instructions, and will prevent any accidental writing or clearing of the device. Data can be read normally from the device regardless of the write enable/disable status. The EWEN and EWDS instructions timing is shown in Figure 4. CS AN DI 1 1 0 tPD0 DO HIGH−Z AN−1 A0 Don’t Care Dummy 0 D15 . . . D0 or D7 . . . D0 Address + 1 D15 . . . D0 or D7 . . . D0 Address + 2 D15 . . . D0 or D7 . . . D0 Address + n D15 . . . or D7 . . . Figure 3. READ Instruction Timing SK CS STANDBY DI 1 0 0 * * ENABLE = 11 DISABLE = 00 Figure 4. EWEN/EWDS Instruction Timing http://onsemi.com 7 CAT93C56, CAT93C57 Write Erase After receiving a WRITE command (Figure 5), address and the data, the CS (Chip Select) pin must be deselected for a minimum of tCSMIN. The falling edge of CS will start the self clocking clear and data store cycle of the memory location specified in the instruction. The clocking of the SK pin is not necessary after the device has entered the self clocking mode. The ready/busy status of the CAT93C56/57 can be determined by selecting the device and polling the DO pin. Since this device features Auto−Clear before write, it is NOT necessary to erase a memory location before it is written into. SK Upon receiving an ERASE command and address, the CS (Chip Select) pin must be deasserted for a minimum of tCSMIN (Figure 6). The falling edge of CS will start the self clocking clear cycle of the selected memory location. The clocking of the SaK pin is not necessary after the device has entered the self clocking mode. The ready/busy status of the CAT93C56/57 can be determined by selecting the device and polling the DO pin. Once cleared, the content of a cleared location returns to a logical “1” state. tCSMIN CS AN DI 1 0 1 tSV DO HIGH−Z tEW BUSY READY tHZ HIGH−Z AN−1 A0 DN D0 STATUS VERIFY STANDBY Figure 5. Write Instruction Timing SK CS AN DI 1 1 1 tSV DO HIGH−Z AN−1 A0 STATUS VERIFY tCS STANDBY tHZ BUSY tEW READY HIGH−Z Figure 6. Erase Instruction Timing http://onsemi.com 8 CAT93C56, CAT93C57 Erase All Write All Upon receiving an ERAL command (Figure 7), the CS (Chip Select) pin must be deselected for a minimum of tCSMIN. The falling edge of CS will start the self clocking clear cycle of all memory locations in the device. The clocking of the SK pin is not necessary after the device has entered the self clocking mode. The ready/busy status of the CAT93C56/57 can be determined by selecting the device and polling the DO pin. Once cleared, the contents of all memory bits return to a logical “1” state. Upon receiving a WRAL command and data, the CS (Chip Select) pin must be deselected for a minimum of tCSMIN (Figure 8). The falling edge of CS will start the self clocking data write to all memory locations in the device. The clocking of the SK pin is not necessary after the device has entered the self clocking mode. The ready/busy status of the CAT93C56/57 can be determined by selecting the device and polling the DO pin. It is not necessary for all memory locations to be cleared before the WRAL command is executed. SK CS STATUS VERIFY tCS STANDBY DI 1 0 0 1 0 tSV tHZ BUSY tEW READY HIGH−Z DO HIGH−Z Figure 7. ERAL Instruction Timing SK CS STATUS VERIFY tCSMIN STANDBY DI 1 0 0 0 1 DN D0 tSV tHZ BUSY tEW READY HIGH−Z DO Figure 8. WRAL Instruction Timing http://onsemi.com 9 CAT93C56, CAT93C57 PACKAGE DIMENSIONS PDIP−8, 300 mils CASE 646AA−01 ISSUE A SYMBOL A A1 A2 b E1 b2 c D E E1 e eB PIN # 1 IDENTIFICATION D L 7.87 2.92 3.30 0.38 2.92 0.36 1.14 0.20 9.02 7.62 6.10 3.30 0.46 1.52 0.25 9.27 7.87 6.35 2.54 BSC 10.92 3.80 4.95 0.56 1.78 0.36 10.16 8.25 7.11 MIN NOM MAX 5.33 TOP VIEW E A A2 A1 b2 L c e SIDE VIEW Notes: (1) All dimensions are in millimeters. (2) Complies with JEDEC MS-001. b eB END VIEW http://onsemi.com 10 CAT93C56, CAT93C57 PACKAGE DIMENSIONS SOIC 8, 150 mils CASE 751BD−01 ISSUE O SYMBOL A A1 b c E1 E D E E1 e h L PIN # 1 IDENTIFICATION TOP VIEW 0.25 0.40 MIN 1.35 0.10 0.33 0.19 4.80 5.80 3.80 1.27 BSC 0.50 1.27 NOM MAX 1.75 0.25 0.51 0.25 5.00 6.20 4.00 θ 0º 8º D h A1 A θ c e SIDE VIEW b L END VIEW Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC MS-012. http://onsemi.com 11 CAT93C56, CAT93C57 PACKAGE DIMENSIONS SOIC−8, 208 mils CASE 751BE−01 ISSUE O SYMBOL A A1 b c E1 E D E E1 e L MIN NOM MAX 2.03 0.05 0.36 0.19 5.13 7.75 5.13 1.27 BSC 0.51 0.25 0.48 0.25 5.33 8.26 5.38 0.76 θ PIN#1 IDENTIFICATION TOP VIEW 0º 8º D A q e b A1 L c END VIEW SIDE VIEW Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with EIAJ EDR-7320. http://onsemi.com 12 CAT93C56, CAT93C57 PACKAGE DIMENSIONS TSSOP8, 4.4x3 CASE 948AL−01 ISSUE O b SYMBOL A A1 A2 b E1 E c D E E1 e L L1 MIN 0.05 0.80 0.19 0.09 2.90 6.30 4.30 NOM MAX 1.20 0.15 0.90 1.05 0.30 0.20 3.00 6.40 4.40 0.65 BSC 1.00 REF 3.10 6.50 4.50 0.50 0.60 0.75 θ e 0º 8º TOP VIEW D A2 A q1 c A1 SIDE VIEW Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC MO-153. L1 END VIEW L http://onsemi.com 13 CAT93C56, CAT93C57 PACKAGE DIMENSIONS TDFN8, 2x3 CASE 511AK−01 ISSUE A D A e b E E2 PIN#1 IDENTIFICATION A1 PIN#1 INDEX AREA D2 L TOP VIEW SIDE VIEW BOTTOM VIEW SYMBOL A A1 A2 A3 b D D2 E E2 e L MIN 0.70 0.00 0.45 0.20 1.90 1.30 2.90 1.20 0.20 NOM 0.75 0.02 0.55 0.20 REF 0.25 2.00 1.40 3.00 1.30 0.50 TYP 0.30 MAX 0.80 0.05 0.65 0.30 2.10 1.50 3.10 1.40 0.40 FRONT VIEW A2 A3 Notes: (1) All dimensions are in millimeters. (2) Complies with JEDEC MO-229. http://onsemi.com 14 CAT93C56, CAT93C57 PACKAGE DIMENSIONS TDFN8, 3x3 CASE 511AL−01 ISSUE A D A e b L E E2 PIN#1 ID PIN#1 INDEX AREA A1 D2 TOP VIEW SIDE VIEW BOTTOM VIEW SYMBOL A A1 A3 b D D2 E E2 e L MIN 0.70 0.00 0.23 2.90 2.20 2.90 1.40 0.20 NOM 0.75 0.02 0.20 REF 0.30 3.00 −−− 3.00 −−− 0.65 TYP 0.30 MAX 0.80 0.05 0.37 3.10 2.50 3.10 1.80 0.40 A1 FRONT VIEW A A3 Notes: (1) All dimensions are in millimeters. (2) Complies with JEDEC MO-229. http://onsemi.com 15 CAT93C56, CAT93C57 Example of Ordering Information CAT93C56, Die Rev. G, New Product Prefix CAT Device # 93C56 Suffix V I −G T3 Company ID Product Number 93C56 Temperature Range I = Industrial (−40°C to +85°C) E = Extended (−40°C to +125°C) Lead Finish G: NiPdAu Blank: Matte−Tin Tape & Reel (Note 16) T: Tape & Reel 2: 2,000 Units / Reel (Note 14) 3: 3,000 Units / Reel Package L: PDIP V: SOIC, JEDEC X: SOIC, EIAJ (Note 14) Y: TSSOP VP2: TDFN (2 x 3 mm) 9. The device used in the above example is a CAT93C56VI−GT3 (SOIC, Industrial Temperature, NiPdAu, Tape & Reel). CAT93C56/57, Die Rev. E, Mature Product (CAT93C56, Rev. E − Not Recommended for New Designs) Prefix CAT Device # 93C56 Suffix V I −1.8 −G T3 Rev E (Note 13) Company ID Product Number 93C56 93C57 Temperature Range I = Industrial (−40°C to +85°C) A = Automotive (−40°C to +105°C) E = Extended (−40°C to +125°C) Lead Finish G: NiPdAu Blank: Matte−Tin Die Revision 93C56: E 93C57: E Package L: PDIP V: SOIC, JEDEC W: SOIC, JEDEC X: SOIC, EIAJ (Note 14) Y: TSSOP ZD4: TDFN (3 x 3 mm) Operating Voltage Blank: VCC = 2.5 V to 5.5 V 1.8: VCC = 1.8 V to 5.5 V Tape & Reel (Note 16) T: Tape & Reel 2: 2,000 Units / Reel (Note 14) 3: 3,000 Units / Reel 10. All packages are RoHS−compliant (Lead−free, Halogen−free). 11. The standard lead finish is NiPdAu. 12. The device used in the above example is a CAT93C56VI−1.8−GT3 (SOIC green package, Industrial Temperature, 1.8 Volt to 5.5 Volt Operating Voltage, NiPdAu finish, Tape & Reel). 13. Product die revision letter is marked on top of the package as a suffix to the production date code (e.g., AYWWE). For additional information, please contact your ON Semiconductor sales office. 14. For SOIC, EIAJ (X) package the standard lead finish is Matte−Tin. This package is available in 2,000 pcs/reel, i.e. CAT93C56XI−T2. 15. For additional package and temperature options, please contact your nearest ON Semiconductor sales office. 16. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 16 CAT93C56, CAT93C57 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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