CM1631
LCD and Camera EMI Filter
Array with ESD Protection
Product Description
The CM1631 is a family of pi−style EMI filter arrays with ESD
protection, which integrates four, six, or eight filters (C−R−C) in
a small form factor, UDFN 0.40 mm pitch package. The CM1631 has
component values of 15 pF − 100 W − 15 pF per channel with
a cut−off frequency of 120 MHz, and can be used in applications with
data rates up to 48 Mbps. The device includes ESD diodes on every
pin, that provide a very high level of protection for sensitive electronic
components against possible electrostatic discharge (ESD). The ESD
protection diodes safely dissipate ESD strikes of ±15 kV, which is well
beyond the maximum requirement of the IEC61000−4−2 international
standard. Using the MIL−STD−883 (Method 3015) specification for
Human Body Model (HBM) ESD, the pins are protected for contact
discharges greater than ±30 kV.
These devices are particularly well−suited for portable electronics
(e.g. wireless handsets, PDAs, notebook computers) because of their
small package and easy−to−use pin assignments. In particular, the
CM1631 is ideal for EMI filtering and protecting data and control lines
for the I/O data ports, LCD display and camera interface in mobile
handsets.
The CM1631 is housed in space−saving, ultra−low−profile 8−, 12−
and 16−lead UDFN packages with a 0.40 mm pitch and is available
with lead−free finishing. This smaller size UDFN package provides up
to 42% board space saving vs. the 0.50 mm pitch UDFN packages.
http://onsemi.com
Filter
+
ESDn*
•
•
•
•
•
•
•
•
Applications
• LCD and Camera Data Lines in Mobile Handsets
• EMI Filtering for Data Ports in Cell Phones, PDAs or
•
April, 2011 − Rev. 1
C
R
C
15 pF
GND
15 pF
1 of 4, 6 or 8 EMI/RFI + ESD Channels
* See Package/Pinout Diagrams for expanded pin information.
MARKING DIAGRAM
P31E MG
G
1
1
1
UE
P31E
P318E
M
G
P318E MG
G
= CM1631−04DE
= CM1631−06DE
= CM1631−08DE
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
CM1631−04DE
UDFN−8
(Pb−Free)
UDFN−12
(Pb−Free)
UDFN−16
(Pb−Free)
3000/Tape & Reel
CM1631−06DE
CM1631−08DE
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
• I/O Port Protection for Mobile Handsets, Notebook
Computers, PDAs, etc.
• Handheld PCs/PDAs
• Wireless Handsets
Notebook Computers
LCD and Camera Modules
© Semiconductor Components Industries, LLC, 2011
Filter
+
ESDn*
100 W
UE MG
G
ESD Protection
Pi−Style EMI Filters in a Capacitor−Resistor−Capacitor (C−R−C)
Network
±15 kV ESD Protection on Each Channel
(IEC 61000−4−2 Level 4, Contact Discharge)
±30 kV ESD Protection on Each Channel (HBM)
Greater than 35 dB Attenuation (Typical) at 1 GHz
UDFN Package with 0.40 mm Lead Pitch:
♦ 4−ch. = 8−lead UDFN
♦ 6−ch. = 12−lead UDFN
♦ 8−ch. = 16−lead UDFN
Tiny UDFN Package Size:
♦ 8−lead: 1.70 mm x 1.35 x 0.50 mm
♦ 12−lead: 2.50 mm x 1.35 x 0.50 mm
♦ 16−lead: 3.30 mm x 1.35 x 0.50 mm
Increased Robustness against Vertical Impacts During
Manufacturing Process
These Devices are Pb−Free and are RoHS Compliant
UDFN16
DE SUFFIX
CASE 517BE
ELECTRICAL SCHEMATIC
Features
• Four, Six and Eight Channels of EMI Filtering with Integrated
UDFN12
DE SUFFIX
CASE 517BD
UDFN8
DE SUFFIX
CASE 517BC
1
Publication Order Number:
CM1631/D
CM1631
PACKAGE / PINOUT DIAGRAMS
Top View
(Pins Down View)
8 7 6 5
Pin 1
Marking
Bottom View
(Pins Up View)
1 2 3 4
GND
PAD
UE
Top View
(Pins Down View)
12 11 10 9 8 7
Bottom View
(Pins Up View)
1 2 3 4 5 6
P31E
GND
PAD
Pin 1
Marking
1 2 3 4 5 6
12 11 10 9 8 7
CM1631−06DE
12 Lead UDFN Package
1 2 3 4
8 7 6 5
CM1631−04DE
8 Lead UDFN Package
Pin 1
Marking
Top View
(Pins Down View)
16 15 14 13 12 11 10 9
Bottom View
(Pins Up View)
1 2 3 4 5 6 7 8
P318E
GND
PAD
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
CM1631−08DE
16 Lead UDFN Package
Table 1. PIN DESCRIPTIONS
Device Pin(s)
Device Pin(s)
−04
−06
−08
−04
Name
−06
−08
1
1
1
FILTER1
Name
Filter + ESD Channel 1
8
12
16
FILTER1
Filter + ESD Channel 1
2
2
2
FILTER2
Filter + ESD Channel 2
7
11
15
FILTER2
Filter + ESD Channel 2
3
3
3
FILTER3
Filter + ESD Channel 3
6
10
14
FILTER3
Filter + ESD Channel 3
4
4
4
FILTER4
Filter + ESD Channel 4
5
9
13
FILTER4
Filter + ESD Channel 4
−
5
5
FILTER5
Filter + ESD Channel 5
−
8
12
FILTER5
Filter + ESD Channel 5
−
6
6
FILTER6
Filter + ESD Channel 6
−
7
11
FILTER6
Filter + ESD Channel 6
−
−
7
FILTER7
Filter + ESD Channel 7
−
−
10
FILTER7
Filter + ESD Channel 7
−
−
8
FILTER8
Filter + ESD Channel 8
−
−
9
FILTER8
Filter + ESD Channel 8
Device Ground
−
−
−
−
GND PAD
GND
Description
http://onsemi.com
2
Description
CM1631
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
−65 to +150
°C
DC Power per Resistor
100
mW
DC Package Power Rating
500
mW
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
Units
–40 to +85
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
R
Parameter
Conditions
Typ
Max
Units
80
100
120
W
Total Channel Capacitance
At 2.5 V DC Reverse Bias,
1 MHz, 30 mV AC
24
30
36
pF
Capacitance C
At 2.5 V DC Reverse Bias,
1 MHz, 30 mV AC
12
15
18
pF
Stand−off Voltage
IDIODE = 10 mA
6.0
ILEAK
Diode Leakage Current (Reverse Bias)
VDIODE = 3.3 V
0.1
VSIG
Signal Clamp Voltage
Positive Clamp
Negative Clamp
ILOAD = 10 mA
ILOAD = −10 mA
VESD
In−system ESD Withstand Voltage
a) Human Body Model, MIL−STD−883,
Method 3015
b) Contact Discharge per
IEC 61000−4−2 Level 4
CTOTAL
C
VDIODE
RDYN
fC
A1GHz
A800MHz − 6GHz
Resistance
Min
(Note 2)
5.6
−0.4
6.8
−0.8
V
1.0
mA
V
kV
±30
±15
Dynamic Resistance
Positive
Negative
2.3
0.9
W
Cut−off Frequency
ZSOURCE = 50 W, ZLOAD = 50 W
Channel R = 100 W,
Channel C = 15 pF
Absolute Attenuation @ 1 GHz from 0 dB Level
ZSOURCE = 50 W, ZLOAD = 50 W,
DC Bias = 0 V (Notes 1 and 3)
35
dB
Absolute Attenuation @ 800 MHz to 6 GHz
from 0 dB Level
ZSOURCE = 50 W, ZLOAD = 50 W,
DC Bias = 0 V (Notes 1 and 3)
30
dB
1. TA = 25°C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Attenuation / RF curves characterized by a network analyzer using microprobes.
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3
110
MHz
CM1631
PERFORMANCE INFORMATION
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 1. Insertion Loss vs. Frequency (FILTER1 Input to GND, CM1631−04DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 2. Insertion Loss vs. Frequency (FILTER2 Input to GND, CM1631−04DE)
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4
CM1631
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 3. Insertion Loss vs. Frequency (FILTER3 Input to GND, CM1631−04DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 4. Insertion Loss vs. Frequency (FILTER4 Input to GND, CM1631−04DE)
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5
CM1631
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 5. Insertion Loss vs. Frequency (FILTER1 Input to GND, CM1631−06DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 6. Insertion Loss vs. Frequency (FILTER2 Input to GND, CM1631−06DE)
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6
CM1631
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 7. Insertion Loss vs. Frequency (FILTER3 Input to GND, CM1631−06DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 8. Insertion Loss vs. Frequency (FILTER4 Input to GND, CM1631−06DE)
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7
CM1631
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 9. Insertion Loss vs. Frequency (FILTER5 Input to GND, CM1631−06DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 10. Insertion Loss vs. Frequency (FILTER6 Input to GND, CM1631−06DE)
http://onsemi.com
8
CM1631
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 11. Insertion Loss vs. Frequency (FILTER1 Input to GND, CM1631−08DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 12. Insertion Loss vs. Frequency (FILTER2 Input to GND, CM1631−08DE)
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9
CM1631
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 13. Insertion Loss vs. Frequency (FILTER3 Input to GND, CM1631−08DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 14. Insertion Loss vs. Frequency (FILTER4 Input to GND, CM1631−08DE)
http://onsemi.com
10
CM1631
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 15. Insertion Loss vs. Frequency (FILTER5 Input to GND, CM1631−08DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 16. Insertion Loss vs. Frequency (FILTER6 Input to GND, CM1631−08DE)
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11
CM1631
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 17. Insertion Loss vs. Frequency (FILTER7 Input to GND, CM1631−08DE)
0 dB
−5 dB
−10 dB
INSERTION LOSS
−15 dB
−20 dB
−25 dB
−30 dB
−35 dB
−40 dB
−45 dB
−50 dB
3 MHz
10 MHz
100 MHz
1 GHz
6 GHz
FREQUENCY
Figure 18. Insertion Loss vs. Frequency (FILTER8 Input to GND, CM1631−08DE)
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12
CM1631
PERFORMANCE INFORMATION (Cont’d)
Capacitance (Normalized)
Typical Diode Capacitance vs. Input Voltage
DC Voltage
Figure 19. Filter Capacitance vs. Input Voltage
(normalized to capacitance at 2.5 V DC and 255C)
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13
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN8, 1.7x1.35, 0.4P
CASE 517BC
ISSUE A
8
1
SCALE 4:1
DATE 11 AUG 2022
GENERIC
MARKING DIAGRAMS*
1
XX MG
G
1
XXXMG
G
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON47060E
UDFN8, 1.7x1.35, 0.4P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN12, 2.5x1.35, 0.4P
CASE 517BD−01
ISSUE O
12
1
DATE 18 NOV 2009
SCALE 4:1
A
B
D
2X
0.10 C
PIN ONE
REFERENCE
2X
L1
ÉÉÉ
ÉÉÉ
0.10 C
DETAIL A
E
OPTIONAL
CONSTRUCTIONS
TOP VIEW
DETAIL B
(A3)
A1
0.05 C
NOTE 4
A1
SIDE VIEW
12X
6
1
C
SEATING
PLANE
MOLD CMPD
DETAIL B
OPTIONAL
CONSTRUCTION
DETAIL A
D2
L
ÇÇ
ÇÇ
ÉÉ
EXPOSED Cu
A
0.05 C
12X
L
L
A3
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.25 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.13 REF
0.15
0.25
2.50 BSC
1.90
2.10
1.35 BSC
0.30
0.50
0.40 BSC
0.15
−−−
0.20
0.30
−−−
0.05
GENERIC
MARKING DIAGRAM*
E2
XX MG
G
12
K
7
e
12X
1
b
XX
= Specific Device Code
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
0.10 C A B
BOTTOM VIEW
0.05 C
NOTE 3
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
RECOMMENDED
SOLDERING FOOTPRINT*
PACKAGE
OUTLINE
12X
2.20
0.40
1.55
0.50
12X
0.40
PITCH
0.25
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON47061E
UDFN12, 2.5X1.35, 0.4P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN16, 3.3x1.35, 0.4P
CASE 517BE−01
ISSUE O
16
DATE 18 NOV 2009
1
SCALE 4:1
A
B
D
2X
0.10 C
PIN ONE
REFERENCE
2X
0.10 C
L1
ÉÉÉ
ÉÉÉ
DETAIL A
E
OPTIONAL
CONSTRUCTIONS
TOP VIEW
EXPOSED Cu
A
DETAIL B
0.05 C
(A3)
16X
A1
0.05 C
NOTE 4
16X
A1
SIDE VIEW
SEATING
PLANE
C
8
1
ÇÇ
ÇÇ
ÉÉ
MOLD CMPD
DETAIL B
OPTIONAL
CONSTRUCTION
DETAIL A
D2
L
L
L
A3
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.25 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.13 REF
0.15
0.25
3.30 BSC
2.70
2.90
1.35 BSC
0.30
0.50
0.40 BSC
0.15
−−−
0.20
0.30
−−−
0.05
GENERIC
MARKING DIAGRAM*
E2
XX MG
G
K
16
9
e
16X
1
b
XX
= Specific Device Code
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
0.10 C A B
BOTTOM VIEW
0.05 C
NOTE 3
RECOMMENDED
SOLDERING FOOTPRINT*
PACKAGE
OUTLINE
3.00
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
16X
0.40
1.55
0.50
16X
0.40
PITCH
0.25
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON47062E
UDFN16, 3.3X1.35, 0.4P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
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