CNY17-3SR2V-M

CNY17 Series, MOC8106M 6-Pin DIP High BVCEO Phototransistor Optocouplers Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package. www.onsemi.com Features • High BVCEO: 70 V Minimum 6 • Closely Matched Current Transfer Ratio (CTR) Minimizes PDIP6 CASE 646BY (CNY17XM, CNY17FXM, MOC8106M) • • • Unit−to−Unit Variation Current Transfer Ratio In Select Groups Very Low Coupled Capacitance Along With No Chip−to−Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M) Safety and Regulatory Approvals: ♦ UL1577, 4,170 VACRMS for 1 Minute ♦ DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage 6 6 1 1 PDIP6 CASE 646BZ PDIP6 CASE 646BX MARKING DIAGRAM Applications • • • • • 1 Power Supply Regulators Digital Logic Inputs Microprocessor Inputs Appliance Sensor Systems Industrial Controls ON V 3 4 1 CNY17−1 2 X YY 6 Q 5 1. ON = Company Logo 2. CNY17 = Device Number 3. V = DIN EN/IEC60747−5−5 Option (only appears on component ordered with this option) 4 X = One−Digit Year Code 5. YY = Digit Work Week 6. Q = Assembly Package Code ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2006 March, 2021 − Rev. 2 1 Publication Order Number: CNY17F4M/D CNY17 Series, MOC8106M SCHEMATICS ANODE 1 ANODE 1 6 NC CATHODE 2 CATHODE 2 5 COLLECTOR NC 3 6 BASE 5 COLLECTOR NC 3 4 EMITTER CNY17F1M/2M/3M/4M MOC8106M 4 EMITTER CNY171M/2M/3M/4M Figure 1. Schematics SAFETY AND INSULATION RATINGS As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Characteristics Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV < 300 VRMS I–III Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol VPR 175 Parameter Value Unit Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over−Voltage 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4” Lead Spacing) ≥ 10 mm DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm TS Case Temperature (Note 1) 175 °C IS, INPUT Input Current (Note 1) 350 mA PS, OUTPUT Output Power (Note 1) 800 mW > 109 Ω RIO Insulation Resistance at TS, VIO = 500 V (Note 1) 1. Safety limit values – maximum values allowed in the event of a failure. www.onsemi.com 2 CNY17 Series, MOC8106M ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Units Storage Temperature −40 to +125 °C TA Ambient Operating Temperature −40 to +100 °C TJ Junction Temperature −40 to +125 °C TOTAL DEVICE TSTG TSOL PD Lead Solder Temperature Total Device Power Dissipation @ 25°C (LED plus detector) Derate Linearly From 25°C 260 for 10 seconds °C 270 mW 2.94 mW/°C EMITTER IF Continuous Forward Current 60 mA VR Reverse Voltage 6 V 1.5 A IF (pk) PD Forward Current – Peak (1 ms pulse, 300 pps) LED Power Dissipation 25°C Ambient Derate Linearly From 25°C 120 mW 1.41 mW/°C Continuous Collector Current 50 mA VCEO Collector−Emitter Voltage 70 V VECO Emitter Collector Voltage DETECTOR IC PD Detector Power Dissipation @ 25°C Derate Linearly from 25°C 7 V 150 mW 1.76 mW/°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 3 CNY17 Series, MOC8106M ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS Symbol Parameter Test Conditions Device Min. Typ. Max. Unit IF = 10 mA All Devices 1.0 1.15 1.50 V IF = 60 mA CNY17XM, CNY17FXM 1.0 1.35 1.65 V VF = 0 V, f = 1.0 MHz All Devices 18 VR = 6 V All Devices 0.001 IC = 1 mA, IF = 0 All Devices 70 100 V EMITTER VF CJ Input Forward Voltage Capacitance IR Reverse Leakage Current pF 10 mA DETECTOR BVCEO Breakdown Voltage Collector−to−Emitter BVCBO Collector−to−Base IC = 10 mA, IF = 0 CNY17XM 70 120 V BVECO Emitter−to−Collector IE = 100 mA, IF = 0 All Devices 7 10 V Leakage Current Collector−to−Emitter VCE = 10 V, IF = 0 All Devices VCB = 10 V, IF = 0 CNY17XM VCE = 0, f = 1 MHz All Devices 8 pF ICEO ICBO CCE Collector−to−Base Capacitance Collector−to−Emitter 1 50 nA 20 nA CCB Collector−to−Base VCB = 0, f = 1 MHz CNY17XM 20 pF CEB Emitter−to−Base VEB = 0, f = 1 MHz CNY17XM 10 pF TRANSFER CHARACTERISTICS Symbol Parameter Test Conditions Device Min. IF = 10 mA, VCE = 10 V MOC8106M IF = 10 mA, VCE = 5 V Typ. Max. Unit 50 150 % CNY171M, CNY17F1M 40 80 % IF = 10 mA, VCE = 5 V CNY172M, CNY17F2M 63 125 % IF = 10 mA, VCE = 5 V CNY173M, CNY17F3M 100 200 % IF = 10 mA, VCE = 5 V CNY174M, CNY17F4M 160 320 % IC = 0.5 mA, IF = 5 mA MOC8106M 0.4 V IC = 2.5 mA, IF = 10 mA CNY17XM/CNY17FXM COUPLED CTR VCE(SAT) Current Transfer Ratio Collector−Emitter Saturation Voltage www.onsemi.com 4 CNY17 Series, MOC8106M AC CHARACTERISTICS Symbol Parameter Test Conditions Device Min. Typ. Max. Unit NON−SATURATED SWITCHING TIME ton Turn−On Time IC = 2.0 mA, VCC = 10 V, RL = 100 W All Devices 2.0 10.0 ms toff Turn−Off Time IC = 2.0 mA, VCC = 10 V, RL = 100 W All Devices 3.0 10.0 ms td Delay Time IF = 10 mA, VCC = 5 V, RL = 75 W CNY17XM/CNY17FXM 5.6 ms tr Rise Time IF = 10 mA, VCC = 5 V, RL = 75 W CNY17XM/CNY17FXM 4.0 ms ts Storage Time IF = 10 mA, VCC = 5 V, RL = 75 W CNY17XM/CNY17FXM 4.1 ms tf Fall Time IF = 10 mA, VCC = 5 V, RL = 75 W CNY17XM/CNY17FXM 3.5 ms IF = 20 mA, VCC = 5 V, RL = 1 kW CNY171M/F1M 5.5 ms IF = 10 mA, VCC = 5 V, RL = 1 kW CNY172M/3M/4M CNY17F2M/F3M/F4M 8.0 ms IF = 20 mA, VCC = 5 V, RL = 1 kW CNY171M/F1M 4.0 ms IF = 10 mA, VCC = 5 V, RL = 1 kW CNY172M/3M/4M CNY17F2M/F3M/F4M 6.0 ms IF = 20 mA, VCC = 5 V, RL = 1 kW CNY171M/F1M 34.0 ms IF = 10 mA, VCC = 5 V, RL = 1 kW CNY172M/3M/4M CNY17F2M/F3M/F4M 39.0 ms IF = 20 mA, VCC = 5 V, RL = 1 kW CNY171M/F1M 20.0 ms IF = 10 mA, VCC = 5 V, RL = 1 kW CNY172M/3M/4M CNY17F2M/F3M/F4M 24.0 ms SATURATED SWITCHING TIME td tr ts tf Delay Time Rise Time Storage Time Fall Time ISOLATION CHARACTERISTICS Symbol Parameter VISO Input−Output Isolation Voltage CISO Isolation Capacitance RISO Isolation Resistance Test Conditions Min. t = 1 Minute 4170 VI−O = 0 V, f = 1 MHz VI−O = ±500 VDC, TA = 25°C www.onsemi.com 5 Typ. Unit VACRMS 0.2 1011 Max. pF W CNY17 Series, MOC8106M TYPICAL PERFORMANCE CHARACTERISTICS 1.6 1.4 1.4 Normalized to IF = 10 mA VCE = 5.0 V TA = 25°C 1.2 IF = 5 mA Normalized CTR Normalized CTR 1.2 1.0 0.8 0.6 1.0 IF = 10 mA 0.8 0.6 IF = 20 mA 0.4 0.4 0.2 0 2 4 6 8 10 12 14 16 0.2 −60 18 20 0 20 40 60 80 100 Figure 2. Normalized CTR vs. Forward Current Figure 3. Normalized CTR vs. Ambient Temperature 1.0 Normalized CTR − (CTRRBE / CTR (open)) TA, Ambient Temperature (5C) IF = 20 mA 0.9 0.8 0.7 0.6 IF = 5 mA 0.5 IF = 10 mA 0.4 0.3 0.2 VCE = 5.0 V 0.1 0.0 10 1000 100 1000 100 1.0 0.9 0.8 0.7 IIFF ==20 20mAmA 0.6 0.5 IIF ==10 10mAmA F 0.4 0.3 IFI ==5 mA 5 mA F 0.2 VCE = 0.3 V 0.1 0.0 10 100 1000 RBE, Base Resistance (kW) RBE, Base Resistance (kW) Figure 4. CTR vs. RBE (Unsaturated) Figure 5. CTR vs. RBE (Saturated) I = 10 mA VCC CC = 10 V A = 25° C TA = 25°C IFF Switching Speed (ms) −40 −20 IF, Forward Current (mA) Normalized ton − (ton(RBE) / ton(open)) Normalized CTR − (CTRRBE / CTRRBE (open)) 0.0 Normalized to IF = 10 mA Normalized to: F IT = 25°C AA= 25° C Toff 10 Tf Ton 1 0.1 0.1 Tr 1 10 5.0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 100 VCCV= 10 V CC = IC = C2 mA = 100 RL = L100 W 4.5 10 100 1000 10000 100000 R, Load Resistor (kW) RBE, Base Resistance (kW) Figure 6. Switching Speed vs. Load Resistor Figure 7. Normalized ton vs. RBE www.onsemi.com 6 CNY17 Series, MOC8106M 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 10 1.8 1.7 VF, Forward Voltage (V) Normalized toff − (toff(RBE) / toff (open)) TYPICAL PERFORMANCE CHARACTERISTICS (Continued) VCC VCC = 10= V IC = 2CLmA = 100 RL = 100 W 1.6 1.5 TA = −55°C 1.4 TA = 25°C 1.3 1.2 1.1 TA = 100°C 1.0 100 1000 10000 100000 1 10 100 IF, Led Forward Current (mA) RBE, Base Resistance (kW) Figure 8. Normalized toff vs. RBE Figure 9. LED Forward Voltage vs. Forward Current VCE (SAT) Collector−Emitter Saturation Voltage (V) 100 10 TTA 25°C A ==25 °C 1 IF IF==2.5 mA 2.5mA 0.1 20mA IFIF= = 20 mA 0.01 IIFF==5mA 5 mA 0.001 0.01 IFI= 10mA F = 10 mA 0.1 1 10 IC, Collector Current (mA) Figure 10. Collector−Emitter Saturation Voltage vs. Collector Current SWITCHING TEST CIRCUIT AND WAVEFORMS V CC IF INPUT IC INPUT PULSE 10% RL OUTPUT PULSE 90% OUTPUT (VCE) ts td tr ton Figure 11. Switching Test Circuit and Waveforms www.onsemi.com 7 tf toff CNY17 Series, MOC8106M REFLOW PROFILE Figure 12. Reflow Profile Profile Feature Pb*Free Assembly Profile Temperature Min. (Tsmin) 150_C Temperature Max. (Tsmax) 200_C Time (t S) from (Tsmin to Tsmax) 60–120 seconds Ramp*up Rate (tL to tP) 3_C/second max. Liquidous Temperature (TL) 217_C Time (tL) Maintained Above (T L) 60–150 seconds Peak Body Package Temperature 260_C +0_C / –5_C Time (t P) within 5_C of 260_C 30 seconds Ramp*down Rate (TP to TL) 6_C / second max. Time 25_C to Peak Temperature 8 minutes max. Table 1. ORDERING INFORMATION Part Number Package Packing Method† CNY171M DIP 6−Pin Tube (50 Units) CNY171SM SMT 6−Pin (Lead Bend) Tube (50 Units) CNY171SR2M SMT 6−Pin (Lead Bend) Tape and Reel (1000 Units) CNY171TM DIP 6−Pin, 0.4” Lead Spacing Tube (50 Units) CNY171VM DIP 6−Pin, DIN EN/IEC60747−5−5 Option Tube (50 Units) CNY171SVM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option Tube (50 Units) CNY171SR2VM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option Tape and Reel (1000 Units) CNY171TVM DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option Tube (50 Units) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 2. The product orderable part number system listed in this table also applies to the CNY17FXM product family and the MOC8106M device. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BX ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13449G PDIP6 8.51X6.35, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BY ISSUE A DATE 15 JUL 2019 A B DOCUMENT NUMBER: DESCRIPTION: 98AON13450G PDIP6 8.51x6.35, 2.54P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BZ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13451G PDIP6 8.51X6.35, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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