CNY17 Series, MOC8106M
6-Pin DIP High BVCEO
Phototransistor
Optocouplers
Description
The CNY17XM, CNY17FXM, and MOC8106M devices consist of
a gallium arsenide infrared emitting diode coupled with an NPN
phototransistor in a dual in−line package.
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Features
• High BVCEO: 70 V Minimum
6
• Closely Matched Current Transfer Ratio (CTR) Minimizes
PDIP6
CASE 646BY
(CNY17XM, CNY17FXM, MOC8106M)
•
•
•
Unit−to−Unit Variation
Current Transfer Ratio In Select Groups
Very Low Coupled Capacitance Along With
No Chip−to−Pin 6 Base Connection for Minimum Noise
Susceptibility (CNY17FXM, MOC8106M)
Safety and Regulatory Approvals:
♦ UL1577, 4,170 VACRMS for 1 Minute
♦ DIN−EN/IEC60747−5−5, 850 V Peak Working
Insulation Voltage
6
6
1
1
PDIP6
CASE 646BZ
PDIP6
CASE 646BX
MARKING DIAGRAM
Applications
•
•
•
•
•
1
Power Supply Regulators
Digital Logic Inputs
Microprocessor Inputs
Appliance Sensor Systems
Industrial Controls
ON
V
3
4
1
CNY17−1
2
X YY
6
Q
5
1. ON
= Company Logo
2. CNY17 = Device Number
3. V
= DIN EN/IEC60747−5−5 Option
(only appears on component ordered
with this option)
4 X
= One−Digit Year Code
5. YY
= Digit Work Week
6. Q
= Assembly Package Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2006
March, 2021 − Rev. 2
1
Publication Order Number:
CNY17F4M/D
CNY17 Series, MOC8106M
SCHEMATICS
ANODE 1
ANODE 1
6 NC
CATHODE 2
CATHODE 2
5 COLLECTOR
NC 3
6 BASE
5 COLLECTOR
NC 3
4 EMITTER
CNY17F1M/2M/3M/4M
MOC8106M
4 EMITTER
CNY171M/2M/3M/4M
Figure 1. Schematics
SAFETY AND INSULATION RATINGS
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Characteristics
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 VRMS
I–IV
< 300 VRMS
I–III
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
VPR
175
Parameter
Value
Unit
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1594
Vpeak
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over−Voltage
6000
Vpeak
External Creepage
≥7
mm
External Clearance
≥7
mm
External Clearance (for Option TV, 0.4” Lead Spacing)
≥ 10
mm
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.5
mm
TS
Case Temperature (Note 1)
175
°C
IS, INPUT
Input Current (Note 1)
350
mA
PS, OUTPUT
Output Power (Note 1)
800
mW
> 109
Ω
RIO
Insulation Resistance at TS, VIO = 500 V (Note 1)
1. Safety limit values – maximum values allowed in the event of a failure.
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2
CNY17 Series, MOC8106M
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Units
Storage Temperature
−40 to +125
°C
TA
Ambient Operating Temperature
−40 to +100
°C
TJ
Junction Temperature
−40 to +125
°C
TOTAL DEVICE
TSTG
TSOL
PD
Lead Solder Temperature
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
260 for 10 seconds
°C
270
mW
2.94
mW/°C
EMITTER
IF
Continuous Forward Current
60
mA
VR
Reverse Voltage
6
V
1.5
A
IF (pk)
PD
Forward Current – Peak (1 ms pulse, 300 pps)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
120
mW
1.41
mW/°C
Continuous Collector Current
50
mA
VCEO
Collector−Emitter Voltage
70
V
VECO
Emitter Collector Voltage
DETECTOR
IC
PD
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
7
V
150
mW
1.76
mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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3
CNY17 Series, MOC8106M
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Symbol
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
IF = 10 mA
All Devices
1.0
1.15
1.50
V
IF = 60 mA
CNY17XM, CNY17FXM
1.0
1.35
1.65
V
VF = 0 V, f = 1.0 MHz
All Devices
18
VR = 6 V
All Devices
0.001
IC = 1 mA, IF = 0
All Devices
70
100
V
EMITTER
VF
CJ
Input Forward Voltage
Capacitance
IR
Reverse Leakage Current
pF
10
mA
DETECTOR
BVCEO
Breakdown Voltage
Collector−to−Emitter
BVCBO
Collector−to−Base
IC = 10 mA, IF = 0
CNY17XM
70
120
V
BVECO
Emitter−to−Collector
IE = 100 mA, IF = 0
All Devices
7
10
V
Leakage Current
Collector−to−Emitter
VCE = 10 V, IF = 0
All Devices
VCB = 10 V, IF = 0
CNY17XM
VCE = 0, f = 1 MHz
All Devices
8
pF
ICEO
ICBO
CCE
Collector−to−Base
Capacitance
Collector−to−Emitter
1
50
nA
20
nA
CCB
Collector−to−Base
VCB = 0, f = 1 MHz
CNY17XM
20
pF
CEB
Emitter−to−Base
VEB = 0, f = 1 MHz
CNY17XM
10
pF
TRANSFER CHARACTERISTICS
Symbol
Parameter
Test Conditions
Device
Min.
IF = 10 mA, VCE = 10 V
MOC8106M
IF = 10 mA, VCE = 5 V
Typ.
Max.
Unit
50
150
%
CNY171M, CNY17F1M
40
80
%
IF = 10 mA, VCE = 5 V
CNY172M, CNY17F2M
63
125
%
IF = 10 mA, VCE = 5 V
CNY173M, CNY17F3M
100
200
%
IF = 10 mA, VCE = 5 V
CNY174M, CNY17F4M
160
320
%
IC = 0.5 mA, IF = 5 mA
MOC8106M
0.4
V
IC = 2.5 mA, IF = 10 mA
CNY17XM/CNY17FXM
COUPLED
CTR
VCE(SAT)
Current Transfer Ratio
Collector−Emitter
Saturation Voltage
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4
CNY17 Series, MOC8106M
AC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
NON−SATURATED SWITCHING TIME
ton
Turn−On Time
IC = 2.0 mA, VCC = 10 V, RL = 100 W
All Devices
2.0
10.0
ms
toff
Turn−Off Time
IC = 2.0 mA, VCC = 10 V, RL = 100 W
All Devices
3.0
10.0
ms
td
Delay Time
IF = 10 mA, VCC = 5 V, RL = 75 W
CNY17XM/CNY17FXM
5.6
ms
tr
Rise Time
IF = 10 mA, VCC = 5 V, RL = 75 W
CNY17XM/CNY17FXM
4.0
ms
ts
Storage Time
IF = 10 mA, VCC = 5 V, RL = 75 W
CNY17XM/CNY17FXM
4.1
ms
tf
Fall Time
IF = 10 mA, VCC = 5 V, RL = 75 W
CNY17XM/CNY17FXM
3.5
ms
IF = 20 mA, VCC = 5 V, RL = 1 kW
CNY171M/F1M
5.5
ms
IF = 10 mA, VCC = 5 V, RL = 1 kW
CNY172M/3M/4M
CNY17F2M/F3M/F4M
8.0
ms
IF = 20 mA, VCC = 5 V, RL = 1 kW
CNY171M/F1M
4.0
ms
IF = 10 mA, VCC = 5 V, RL = 1 kW
CNY172M/3M/4M
CNY17F2M/F3M/F4M
6.0
ms
IF = 20 mA, VCC = 5 V, RL = 1 kW
CNY171M/F1M
34.0
ms
IF = 10 mA, VCC = 5 V, RL = 1 kW
CNY172M/3M/4M
CNY17F2M/F3M/F4M
39.0
ms
IF = 20 mA, VCC = 5 V, RL = 1 kW
CNY171M/F1M
20.0
ms
IF = 10 mA, VCC = 5 V, RL = 1 kW
CNY172M/3M/4M
CNY17F2M/F3M/F4M
24.0
ms
SATURATED SWITCHING TIME
td
tr
ts
tf
Delay Time
Rise Time
Storage Time
Fall Time
ISOLATION CHARACTERISTICS
Symbol
Parameter
VISO
Input−Output Isolation Voltage
CISO
Isolation Capacitance
RISO
Isolation Resistance
Test Conditions
Min.
t = 1 Minute
4170
VI−O = 0 V, f = 1 MHz
VI−O = ±500 VDC, TA = 25°C
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5
Typ.
Unit
VACRMS
0.2
1011
Max.
pF
W
CNY17 Series, MOC8106M
TYPICAL PERFORMANCE CHARACTERISTICS
1.6
1.4
1.4
Normalized to
IF = 10 mA
VCE = 5.0 V
TA = 25°C
1.2
IF = 5 mA
Normalized CTR
Normalized CTR
1.2
1.0
0.8
0.6
1.0
IF = 10 mA
0.8
0.6
IF = 20 mA
0.4
0.4
0.2
0
2
4
6
8
10
12
14
16
0.2
−60
18 20
0
20
40
60
80
100
Figure 2. Normalized CTR vs. Forward Current
Figure 3. Normalized CTR vs. Ambient
Temperature
1.0
Normalized CTR − (CTRRBE / CTR (open))
TA, Ambient Temperature (5C)
IF = 20 mA
0.9
0.8
0.7
0.6
IF = 5 mA
0.5
IF = 10 mA
0.4
0.3
0.2
VCE = 5.0 V
0.1
0.0
10
1000
100
1000
100
1.0
0.9
0.8
0.7
IIFF ==20
20mAmA
0.6
0.5
IIF ==10
10mAmA
F
0.4
0.3
IFI ==5 mA
5 mA
F
0.2
VCE = 0.3 V
0.1
0.0
10
100
1000
RBE, Base Resistance (kW)
RBE, Base Resistance (kW)
Figure 4. CTR vs. RBE (Unsaturated)
Figure 5. CTR vs. RBE (Saturated)
I = 10 mA
VCC
CC = 10 V
A = 25° C
TA = 25°C
IFF
Switching Speed (ms)
−40 −20
IF, Forward Current (mA)
Normalized ton − (ton(RBE) / ton(open))
Normalized CTR − (CTRRBE / CTRRBE (open))
0.0
Normalized to
IF = 10 mA
Normalized
to:
F
IT
= 25°C
AA= 25° C
Toff
10
Tf
Ton
1
0.1
0.1
Tr
1
10
5.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
VCCV= 10 V
CC =
IC = C2 mA
= 100
RL = L100
W
4.5
10
100
1000
10000
100000
R, Load Resistor (kW)
RBE, Base Resistance (kW)
Figure 6. Switching Speed vs. Load Resistor
Figure 7. Normalized ton vs. RBE
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6
CNY17 Series, MOC8106M
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
1.8
1.7
VF, Forward Voltage (V)
Normalized toff − (toff(RBE) / toff (open))
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
VCC
VCC =
10= V
IC = 2CLmA
= 100
RL = 100 W
1.6
1.5
TA = −55°C
1.4
TA = 25°C
1.3
1.2
1.1
TA = 100°C
1.0
100
1000
10000
100000
1
10
100
IF, Led Forward Current (mA)
RBE, Base Resistance (kW)
Figure 8. Normalized toff vs. RBE
Figure 9. LED Forward Voltage vs.
Forward Current
VCE (SAT) Collector−Emitter
Saturation Voltage (V)
100
10
TTA
25°C
A ==25
°C
1
IF IF==2.5
mA
2.5mA
0.1
20mA
IFIF= =
20 mA
0.01
IIFF==5mA
5 mA
0.001
0.01
IFI= 10mA
F = 10
mA
0.1
1
10
IC, Collector Current (mA)
Figure 10. Collector−Emitter Saturation Voltage vs.
Collector Current
SWITCHING TEST CIRCUIT AND WAVEFORMS
V CC
IF
INPUT
IC
INPUT PULSE
10%
RL
OUTPUT PULSE
90%
OUTPUT (VCE)
ts
td
tr
ton
Figure 11. Switching Test Circuit and Waveforms
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7
tf
toff
CNY17 Series, MOC8106M
REFLOW PROFILE
Figure 12. Reflow Profile
Profile Feature
Pb*Free Assembly Profile
Temperature Min. (Tsmin)
150_C
Temperature Max. (Tsmax)
200_C
Time (t S) from (Tsmin to Tsmax)
60–120 seconds
Ramp*up Rate (tL to tP)
3_C/second max.
Liquidous Temperature (TL)
217_C
Time (tL) Maintained Above (T L)
60–150 seconds
Peak Body Package Temperature
260_C +0_C / –5_C
Time (t P) within 5_C of 260_C
30 seconds
Ramp*down Rate (TP to TL)
6_C / second max.
Time 25_C to Peak Temperature
8 minutes max.
Table 1. ORDERING INFORMATION
Part Number
Package
Packing Method†
CNY171M
DIP 6−Pin
Tube (50 Units)
CNY171SM
SMT 6−Pin (Lead Bend)
Tube (50 Units)
CNY171SR2M
SMT 6−Pin (Lead Bend)
Tape and Reel (1000 Units)
CNY171TM
DIP 6−Pin, 0.4” Lead Spacing
Tube (50 Units)
CNY171VM
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
Tube (50 Units)
CNY171SVM
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
Tube (50 Units)
CNY171SR2VM
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
Tape and Reel (1000 Units)
CNY171TVM
DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option
Tube (50 Units)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
2. The product orderable part number system listed in this table also applies to the CNY17FXM product family and the MOC8106M device.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13449G
PDIP6 8.51X6.35, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE A
DATE 15 JUL 2019
A
B
DOCUMENT NUMBER:
DESCRIPTION:
98AON13450G
PDIP6 8.51x6.35, 2.54P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13451G
PDIP6 8.51X6.35, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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