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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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CNY171M, CNY172M, CNY173M, CNY174M,
CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M,
MOC8106M
6-Pin DIP High BVCEO Phototransistor Optocouplers
Features
Description
■ High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM,
The CNY17XM, CNY17FXM, and MOC8106M devices
consist of a gallium arsenide infrared emitting diode
coupled with an NPN phototransistor in a dual in-line
package.
■
■
■
■
MOC8106M)
Closely Matched Current Transfer Ratio (CTR)
Minimizes Unit-to-Unit Variation
Current Transfer Ratio In Select Groups
Very Low Coupled Capacitance Along With
No Chip-to-Pin 6 Base Connection for Minimum Noise
Susceptability (CNY17FXM, MOC8106M)
Safety and Regulatory Approvals:
– UL1577, 4,170 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Package Outlines
Applications
■ Power Supply Regulators
■ Digital Logic Inputs
■ Microprocessor Inputs
■ Appliance Sensor Systems
■ Industrial Controls
Figure 1. Package Outlines
Schematics
ANODE 1
ANODE 1
6 NC
CATHODE 2
5 COLLECTOR
NC 3
6 BASE
CATHODE 2
4 EMITTER
CNY17F1M/2M/3M/4M
MOC8106M
5 COLLECTOR
NC 3
4 EMITTER
CNY171M/2M/3M/4M
Figure 2. Schematics
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers
October 2014
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Characteristics
< 150 VRMS
I–IV
< 300 VRMS
I–IV
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
175
Value
Unit
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1594
Vpeak
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over-Voltage
VPR
Parameter
6000
Vpeak
External Creepage
≥7
mm
External Clearance
≥7
mm
External Clearance (for Option TV, 0.4" Lead Spacing)
≥ 10
mm
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.5
mm
TS
Case Temperature(1)
175
°C
IS,INPUT
Current(1)
350
mA
800
mW
Input
PS,OUTPUT Output
RIO
Power(1)
Insulation Resistance at TS, VIO =
500 V(1)
>
109
Ω
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
2
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers
Safety and Insulation Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
Value
Units
-40 to +125
°C
TOTAL DEVICE
TSTG
Storage Temperature
TA
Ambient Operating Temperature
-40 to +100
°C
TJ
Junction Temperature
-40 to +125
ºC
260 for 10 seconds
°C
270
mW
2.94
mW/°C
TSOL
PD
Lead Solder Temperature
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
EMITTER
IF
Continuous Forward Current
60
mA
VR
Reverse Voltage
6
V
1.5
A
IF (pk)
PD
Forward Current – Peak (1 µs pulse, 300 pps)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
120
mW
1.41
mW/°C
DETECTOR
Continuous Collector Current
50
mA
VCEO
Collector-Emitter Voltage
70
V
VECO
Emitter Collector Voltage
7
V
150
mW
1.76
mW/°C
IC
PD
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
3
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers
Absolute Maximum Ratings
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
Parameters
Test Conditions
Device
Min.
Typ.
Max.
Units
IF = 10 mA
All Devices
1.0
1.15
1.50
V
IF = 60 mA
CNY17XM,
CNY17FXM
1.0
1.35
1.65
V
EMITTER
VF
Input Forward Voltage
CJ
Capacitance
VF = 0 V, f = 1.0 MHz
All Devices
18
IR
Reverse Leakage
Current
VR = 6 V
All Devices
0.001
All Devices
70
100
V
pF
10
µA
DETECTOR
Breakdown Voltage
BVCEO
Collector-to-Emitter
IC = 1 mA, IF = 0
BVCBO
Collector-to-Base
IC = 10 µA, IF = 0
CNY17XM
70
120
V
BVECO
Emitter-to-Collector
IE = 100 µA, IF = 0
All Devices
7
10
V
Leakage Current
ICEO
Collector-to-Emitter
VCE = 10 V, IF = 0
All Devices
ICBO
Collector-to-Base
VCB = 10 V, IF = 0
CNY17XM
1
50
nA
20
nA
Capacitance
CCE
Collector-to-Emitter
VCE = 0, f = 1 MHz
All Devices
8
pF
CCB
Collector-to-Base
VCB = 0, f = 1 MHz
CNY17XM
20
pF
CEB
Emitter-to-Base
VEB = 0, f = 1 MHz
CNY17XM
10
pF
Transfer Characteristics
Symbol
Parameters
Device
Test Conditions
Min.
Typ.
Max. Units
COUPLED
CTR
Current Transfer
Ratio
IF = 10 mA, VCE = 10 V
MOC8106M
50
150
%
IF = 10 mA, VCE = 5 V
CNY171M, CNY17F1M
40
80
%
IF = 10 mA, VCE = 5 V
CNY172M, CNY17F2M
63
125
%
IF = 10 mA, VCE = 5 V
CNY173M, CNY17F3M
100
200
%
CNY174M, CNY17F4M
160
320
%
0.4
V
IF = 10 mA, VCE = 5 V
Collector-Emitter IC = 0.5 mA, IF = 5 mA
VCE(SAT)
Saturation Voltage IC = 2.5 mA, IF = 10 mA
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
MOC8106M
CNY17XM/CNY17FXM
www.fairchildsemi.com
4
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers
Electrical Characteristics
TA = 25°C unless otherwise specified.
AC Characteristics
Symbol
Parameters
Device
Test Conditions
Min.
Typ.
Max. Units
NON-SATURATED SWITCHING TIME
ton
Turn-On Time
IC = 2.0 mA, VCC = 10 V, RL = 100 Ω
toff
Turn-Off Time
td
Delay Time
All Devices
2.0
10.0
µs
IC = 2.0 mA, VCC = 10 V, RL = 100 Ω
All Devices
3.0
10.0
µs
IF = 10 mA, VCC = 5 V, RL = 75 Ω
CNY17XM/CNY17FXM
5.6
µs
tr
Rise Time
IF = 10 mA, VCC = 5 V, RL = 75 Ω
CNY17XM/CNY17FXM
4.0
µs
ts
Storage Time
IF = 10 mA, VCC = 5 V, RL = 75 Ω
CNY17XM/CNY17FXM
4.1
µs
tf
Fall Time
IF = 10 mA, VCC = 5 V, RL = 75 Ω
CNY17XM/CNY17FXM
3.5
µs
IF = 20 mA, VCC = 5 V, RL = 1 kΩ
CNY171M/F1M
5.5
µs
IF = 10 mA, VCC = 5 V, RL = 1 kΩ
CNY172M/3M/4M
CNY17F2M/F3M/F4M
8.0
µs
IF = 20 mA, VCC = 5 V, RL = 1 kΩ
CNY171M/F1M
4.0
µs
IF = 10 mA, VCC = 5 V, RL = 1 kΩ
CNY172M/3M/4M
CNY17F2M/F3M/F4M
6.0
µs
IF = 20 mA, VCC = 5 V, RL = 1 kΩ
CNY171M/F1M
34.0
µs
IF = 10 mA, VCC = 5 V, RL = 1 kΩ
CNY172M/3M/4M
CNY17F2M/F3M/F4M
39.0
µs
IF = 20 mA, VCC = 5 V, RL = 1 kΩ
CNY171M/F1M
20.0
µs
IF = 10 mA, VCC = 5 V, RL = 1 kΩ
CNY172M/3M/4M
CNY17F2M/F3M/F4M
24.0
µs
SATURATED SWITCHING TIMES
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
Isolation Characteristics
Symbol
Characteristic
Test Conditions
VISO
Input-Output Isolation Voltage t = 1 Minute
CISO
Isolation Capacitance
VI-O = 0 V, f = 1 MHz
RISO
Isolation Resistance
VI-O = ±500 VDC, TA = 25°C
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
Min.
Typ.
4170
Units
VACRMS
0.2
1011
Max.
pF
Ω
www.fairchildsemi.com
5
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers
Electrical Characteristics (Continued)
1.4
1.6
VCE = 5.0 V
TA = 25˚C
1.4
Normalized to
IF = 10 mA
1.2
IF = 5 mA
1.2
1.0
IF = 10 mA
NORMALIZED CTR
NORMALIZED CTR
1.0
0.8
0.6
0.8
IF = 20 mA
0.6
0.4
0.4
Normalized to:
IF = 10 mA
TA = 25˚C
0.2
0.2
-60
0.0
0
2
4
6
8
10
12
14
16
18
20
-40
-20
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (˚C)
Figure 3. Normalized CTR vs. Forward Current
Figure 4. Normalized CTR vs. Ambient Temperature
1.0
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
IF – FORWARD CURRENT (mA)
0.9
IF = 20 mA
0.8
IF = 10 mA
IF = 5 mA
0.7
0.6
0.5
0.4
0.3
0.2
VCE = 5.0 V
0.1
0.0
10
100
1000
1.0
0.9
0.8
VCE = 0.3 V
IF = 20 mA
0.7
0.6
0.5
IF = 10 mA
0.4
0.3
IF = 5 mA
0.2
0.1
0.0
10
100
RBE – BASE RESISTANCE (kΩ)
1000
RBE – BASE RESISTANCE (kΩ)
Figure 5. CTR vs. RBE (Unsaturated)
Figure 6. CTR vs. RBE (Saturated)
1000
IF = 10 mA
VCC = 10 V
TA = 25˚C
5.0
NORMALIZED ton – (ton(RBE) / ton(open))
SWITCHING SPEED (μs)
100
Tf
Toff
10
Ton
Tr
1
0.1
0.1
1
10
3.5
3.0
2.5
2.0
1.5
1.0
100
1000
10000
100000
RBE – BASE RESISTANCE (kΩ)
Figure 8. Normalized ton vs. RBE
Figure 7. Switching Speed vs. Load Resistor
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
4.0
0.5
10
100
R – LOAD RESISTOR (kΩ)
VCC = 10 V
IC = 2 mA
RL = 100 Ω
4.5
www.fairchildsemi.com
6
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers
Typical Performance Characteristics
1.8
1.7
1.3
VF – FORWARD VOLTAGE (V)
NORMALIZED toff – (toff(RBE) / toff(open))
1.4
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
VCC = 10V
IC = 2mA
RL = 100Ω
0.4
0.3
1.6
1.5
1.4
TA = -55°C
1.3
TA = 25°C
1.2
TA = 100°C
1.1
0.2
1.0
0.1
10
100
1000
10000
1
100000
Figure 9. Normalized toff vs. RBE
VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V)
10
100
IF – LED FORWARD CURRENT (mA)
RBE – BASE RESISTANCE (kΩ)
Figure 10. LED Forward Voltage vs. Forward Current
100
TA = 25˚C
10
1
IF = 2.5mA
0.1
IF = 20mA
0.01
IF = 5mA
0.001
0.01
IF = 10mA
0.1
1
10
IC - COLLECTOR CURRENT (mA)
Figure 11. Collector-Emitter Saturation Voltage vs. Collector Current
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
7
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers
Typical Performance Characteristics (Continued)
VCC
10%
RL
IC
IF
INPUT PULSE
OUTPUT PULSE
90%
INPUT
OUTPUT (VCE)
ts
td
tf
tr
ton
toff
Figure 12. Switching Test Circuit and Waveforms
Reflow Profile
300
260°C
280
260
> 245°C = 42 s
240
220
200
180
°C
Time above
183°C = 90 s
160
140
120
1.822°C/s Ramp-up rate
100
80
60
40
33 s
20
0
0
60
120
180
270
360
Time (s)
Figure 13. Reflow Profile
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
8
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers
Switching Test Circuit and Waveforms
Part Number
Package
Packing Method
CNY171M
DIP 6-Pin
Tube (50 Units)
CNY171SM
SMT 6-Pin (Lead Bend)
Tube (50 Units)
CNY171SR2M
SMT 6-Pin (Lead Bend)
Tape and Reel (1000 Units)
CNY171TM
DIP 6-Pin, 0.4” Lead Spacing
Tube (50 Units)
CNY171VM
DIP 6-Pin, DIN EN/IEC60747-5-5 Option
Tube (50 Units)
CNY171SVM
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tube (50 Units)
CNY171SR2VM
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tape and Reel (1000 Units)
CNY171TVM
DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option
Tube (50 Units)
Note:
2. The product orderable part number system listed in this table also applies to the CNY17FXM product family and the
MOC8106M device.
Marking Information
1
V
3
CNY17-1
2
X YY Q
6
4
5
Figure 14. Top Mark
Table 1. Top Mark Definitions
1
Fairchild Logo
2
Device Number
3
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4
One-Digit Year Code, e.g., “4”
5
Digit Work Week, Ranging from “01” to “53”
6
Assembly Package Code
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
9
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers
Ordering Information
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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