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CPH3145-TL-E

CPH3145-TL-E

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SC-96

  • 描述:

    TRANS PNP 50V 2A CPH3

  • 数据手册
  • 价格&库存
CPH3145-TL-E 数据手册
CPH3145/CPH3245 Low VCE (sat) Bipolar Transistor (PNP)NPN, (–)50V, (–)2A Features • Adoption of MBIT Process • Large Current Capacity • Low Collector to Emitter Saturation Voltage • High Speed Switching • Ultrasmall Package Facilitates Miniaturization in End Products (mounting height : 0.9mm) • High Allowable Power Dissipation www.onsemi.com ELECTRICAL CONNECTION PNP NPN 3 Typical Applications • Relay Drivers • Lamp Drivers • Motor Drivers • Flash 1 1 2 CPH3145 SPECIFICATIONS ( ) : CPH3145 ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value VCBO (−50)80 Collector to Emitter Voltage VCES (−50)80 V Collector to Emitter Voltage VCEO (−)50 V Emitter to Base Voltage VEBO (−)6 V Collector Current IC (−)2 A Collector Current (Pulse) ICP (−)4 Base Current Collector Dissipation When mounted on ceramic substrate 2 (600mm × 0.8mm) IB 2 CPH3245 1 : Base 2 : Emitter 3 : Collector Unit Collector to Base Voltage V PACKING TYPE : TL A (−)400 mA PC 0.9 W Tj 150 °C TL CPH3145 LOT No. DQ Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. LOT No. MARKING BE Junction Temperature 3 CPH3245 ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 June 2015 - Rev. 2 1 Publication Order Number : CPH3145_CPH3245/D CPH3145/CPH3245 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Value Conditions min typ max Unit Collector Cutoff Current ICBO VCB=(−)40V, IE=0A (−)1 μA Emitter Cutoff Current IEBO VEB=(−)4V, IC=0A (−)1 μA DC Current Gain hFE fT VCE=(−)2V, IC=(−)100mA VCE=(−)10V, IC=(−)300mA Output Capacitance Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Cob VCB=(−)10V, f=1MHz Turn-ON Time ton Storage Time tstg Gain-Bandwidth Product VCE(sat) VBE(sat) 200 560 420 MHz (16)8 IC=(−)1A, IB=(−)50mA pF (−165)130 (−330)260 (−)0.9 (−)1.2 mV V V(BR)CBO IC=(−)10μA, IE=0A (−50)80 V V(BR)CES IC=(−)100μA, RBE=0Ω (−50)80 V V(BR)CEO IC=(−)1mA, RBE=∞ (−)50 V V(BR)EBO IE=(−)10μA, IC=0A (−)6 See specified Test Circuit V (35)35 ns (200)330 ns Fall Time (24)40 ns tf Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR INPUT RB IB1 PW=20μs D.C.≤1% RL 50Ω OUTPUT IB2 VR RB RL 50Ω + 100μF VBE=5V + 470μF + 100μF VBE= --5V VCC= --25V IC= --10IB1=10IB2= --0.7A IC=10IB1= --10IB2=0.7A CPH3145 CPH3245 www.onsemi.com 2 + 470μF VCC=25V CPH3145/CPH3245 www.onsemi.com 3 CPH3145/CPH3245 www.onsemi.com 4 CPH3145/CPH3245 PACKAGE DIMENSIONS unit : mm CPH3 CASE 318BA ISSUE O Recommended Soldering Footprint 1 : Base 2 : Emitter 0.6 2.4 1.4 3 : Collector 0.95 0.95 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) CPH3145-TL-E BE 3,000 / Tape & Reel CPH3245-TL-E DQ CPH3 SC-59, SOT-23, TO-236 (Pb-Free) † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 5
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