CPH3360-TL-W

CPH3360 Power MOSFET –30V, 303mΩ, –1.6A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • High Speed Switching • 4V drive • Pb-Free, Halogen Free and RoHS compliance ID Max −30V 532mΩ@ −4.5V −1.6A Value 3 Unit Drain to Source Voltage VDSS −30 Gate to Source Voltage VGSS ID ±20 V −1.6 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −6.4 A Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD 0.9 W Junction Temperature Tj 150 °C V Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to “ESD immunity