CPH3360
Power MOSFET
–30V, 303mΩ, –1.6A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
• High Speed Switching
• 4V drive
• Pb-Free, Halogen Free and RoHS compliance
ID Max
−30V
532mΩ@ −4.5V
−1.6A
Value
3
Unit
Drain to Source Voltage
VDSS
−30
Gate to Source Voltage
VGSS
ID
±20
V
−1.6
A
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
IDP
−6.4
A
Power Dissipation
When mounted on ceramic substrate
2
(900mm × 0.8mm)
PD
0.9
W
Junction Temperature
Tj
150
°C
V
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : This product is designed to “ESD immunity
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