CPH3455-TL-H

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel V(BR)DSS RDS(ON) MAX ID MAX 35 V 104 mW @ 10 V 3A 35 V, 104 mW, 3 A 173 mW @ 4.5 V 208 mW @ 4 V CPH3455 Description This Power MOSFET is produced using onsemi’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. CPH3 CASE 318BA Features • Low On−Resistance • 4V Drive • Pb−Free, Halogen Free and RoHS Compliance ELECTRICAL CONNECTION N−Channel 3 Typical Applications • Load Switch • Motor Drive 1 1: Gate 2: Source 3: Drain MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Symbol Value Unit Drain−to−Source Voltage VDSS 35 V Gate−to−Source Voltage VGSS ±20 V Drain Current (DC) ID 3 A Drain Current (Pulse) PW ≤ 10 ms, duty cycle ≤ 1% IDP 12 A Power Dissipation When mounted on ceramic substrate (900 mm2 x 0.8 mm) PD 1 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Parameter Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This product is designed to “ESD immunity