DATA SHEET
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MOSFET - Power, Single
N-Channel
V(BR)DSS
RDS(ON) MAX
ID MAX
35 V
104 mW @ 10 V
3A
35 V, 104 mW, 3 A
173 mW @ 4.5 V
208 mW @ 4 V
CPH3455
Description
This Power MOSFET is produced using onsemi’s trench
technology, which is specifically designed to minimize gate charge
and low on resistance. This device is suitable for applications with
low gate charge driving or low on resistance requirements.
CPH3
CASE 318BA
Features
• Low On−Resistance
• 4V Drive
• Pb−Free, Halogen Free and RoHS Compliance
ELECTRICAL CONNECTION
N−Channel
3
Typical Applications
• Load Switch
• Motor Drive
1
1: Gate
2: Source
3: Drain
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
35
V
Gate−to−Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
3
A
Drain Current (Pulse)
PW ≤ 10 ms, duty cycle ≤ 1%
IDP
12
A
Power Dissipation
When mounted on ceramic substrate
(900 mm2 x 0.8 mm)
PD
1
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Parameter
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. This product is designed to “ESD immunity
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