CPH3457-TL-W

Ordering number : ENA1804B CPH3457 N-Channel Power MOSFET http://onsemi.com 30V, 3A, 95mΩ, Single CPH3 Features • • • • ON-resistance RDS(on)1=73mW(typ.) 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Value Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ±12 V Drain Current (DC) ID 3 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 12 A Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 1.0 W 150 °C --55 to +150 °C Junction Temperature Tj Storage Temperature Tstg V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) 7015A-004 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel 0.6 2.9 CPH3457-TL-H CPH3457-TL-W 0.15 Packing Type: TL Marking LOT No. 0.05 1.6 2.8 0.2 LP 3 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Gate 2 : Source 3 : Drain Electrical Connection 3 CPH3 1 2 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 April, 2014 42814HK TC-00003117/90110TKIM PE No. A1804-1/5 CPH3457 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Value min typ Unit max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 30 V Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V Gate Threshold Voltage VDS=10V, ID=1mA Forward Transconductance VGS(th) gFS VDS=10V, ID=1.5A 2.7 RDS(on)1 RDS(on)2 ID=1.5A, VGS=4.5V ID=0.75A, VGS=2.5V 73 95 mW Static Drain-to-Source On-State Resistance 95 133 mW 203 mW 0.4 1 mA ±10 mA 1.3 V S RDS(on)2 ID=0.3A, VGS=1.8V 135 Input Capacitance Ciss VDS=10V, f=1MHz 265 pF Output Capacitance Coss VDS=10V, f=1MHz 35 pF Reverse Transfer Capacitance Crss pF td(on) tr VDS=10V, f=1MHz See specified Test Circuit. 28 Turn-ON Delay Time 5.1 ns See specified Test Circuit. 10 ns See specified Test Circuit. 137 ns Fall Time td(off) tf See specified Test Circuit. 36 ns Total Gate Charge Qg VDS=15V, VGS=4.5V, ID=3A 3.5 nC Rise Time Turn-OFF Delay Time Gate-to-Source Charge Qgs nC Qgd VDS=15V, VGS=4.5V, ID=3A VDS=15V, VGS=4.5V, ID=3A 0.57 Gate-to-Drain “Miller” Charge 0.93 nC Forward Diode Voltage VSD IS=3A, VGS=0V 0.87 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VDD=15V 4.5V 0V VIN PW=10ms D.C.≤1% ID=1.5A RL=10Ω VIN VOUT D G P.G 50Ω S CPH3457 Ordering Information Device CPH3457-TL-H CPH3457-TL-W Package Shipping memo CPH3 3,000pcs./reel Pb-Free and Halogen Free No. A1804-2/5 CPH3457 ID -- VDS 1. 8V 1.6 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.5A 150 100 50 2 4 6 8 Gate-to-Source Voltage, VGS -- V gFS -- ID 7 75 °C 7 5 25 °C 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 25 50 --20 0 20 40 Ciss, Coss, Crss -- pF 2 tr 7 5 80 100 120 td(on) 140 160 IT15791 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 Ciss, Coss, Crss -- VDS 1.2 HD15273 f=1MHz 5 tf 10 60 VGS=0V 7 7 1.6 HD15269 IS -- VSD Ciss 3 3 1.4 Forward Diode Voltage, VSD -- V 100 5 1.2 1.0 7 5 3 2 0.001 3 VDD=15V VGS=4.5V td(off) 100 HD15272 SW Time -- ID 3 2 1.0 Ambient Temperature, Ta -- °C Source Current, IS -- A °C 0.8 A =0.3 V, I D 8 . 1 = VGS A 0.75 I D= , V 5 =2. VGS 1.5A , I D= 4.5V = VGS 150 7 5 3 2 2 -25 =a T 0.6 200 IT15790 3 1.0 0.4 RDS(on) -- Ta 0 --60 --40 10 VDS=10V 5 0.2 250 0.75A 0 0 Gate-to-Source Voltage, VGS -- V Ta=25°C ID=0.3A 200 0 1.0 IT15268 RDS(on) -- VGS 250 0.9 5°C 25° C --25 °C 0.1 0.2 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.6 Ta= 7 0 300 Forward Transconductance, gFS -- S 0.8 °C VGS=1.2V Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns 1.0 0.4 1 0 1.2 --25° C 1.5V 2 1.4 Ta= 75° C 3 0 VDS=10V 1.8 Drain Current, ID -- A 4 ID -- VGS(th) 2.0 Ta=25°C 4.5 V 8.0V Drain Current, ID -- A 5 2.5 V 6.0V 6 2 100 7 5 Coss 3 Crss 2 3 2 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 IT15274 10 1 2 3 4 5 6 7 8 9 Drain-to-Source Voltage, VDS -- V 10 IT15275 No. A1804-3/5 CPH3457 VGS -- Qg 3 2 VDS=15V ID=3A 4.0 10 7 5 3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.5 3.0 2.5 2.0 1.5 1.0 0 0.5 1.0 1.5 2.0 2.5 Total Gate Charge, Qg -- nC PD -- Ta 1.2 3.0 3.5 IT15276 IDP=12A (PW≤10ms) ID=3A 1.0 7 5 3 2 0.1 7 5 3 2 0.5 0 3 2 SOA 10 0 1m ms 10 s m DC s 10 0m op er s ati on (T a= Operation in this area 25 °C is limited by RDS(on). ) 10 ms Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 HD15792 When mounted on ceramic substrate (900mm2×0.8mm) Power Dissipation, PD -- W 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 HD15789 No. A1804-4/5 CPH3457 Outline Drawing CPH3457-TL-H, CPH3457-TL-W Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 Note on usage : Since the CPH3457 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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