CPH5518-TL-E

Ordering number : ENA0492A CPH5518 Bipolar Transistor http://onsemi.com (–)50V, (–)3A, Low VCE(sat) Complementary Dual CPH5 Applications • Relay drivers, lamp drivers, motor drivers Features • • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting The CPH5518 consists of two chips encapsulated in a package which are equivalent to the CPH3116 and the CPH3216, respectively Ultrasmall package facilitate miniaturization in end products (0.9mm mounting height) Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Ratings Unit (--50)80 V (--)50 V VEBO IC (--)5 V (--)1.0 A ICP IB (--)3.0 A (--)200 mA When mounted on ceramic substrate (600mm2×0.8mm)1unit 0.9 W When mounted on ceramic substrate (600mm2×0.8mm) 1.2 W 150 °C --55 to +150 °C Junction Temperature PC PT Tj Storage Temperature Tstg Total Power Dissipation Conditions VCBO VCEO Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information unit : mm (typ) 7017A-009 • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 5 4 CPH5518-TL-E CPH5518-TL-H 0.15 2.9 3 Packing Type : TL Marking LOT No. EN 0.05 1.6 2.8 0.2 0.6 Package Dimensions 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) Electrical Connection 5 4 3 CPH5 1 Semiconductor Components Industries, LLC, 2013 September, 2013 2 92612 TKIM/22807EA TIIM TC-00000532 No. A0492-1/8 CPH5518 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Conditions ICBO IEBO VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A Gain-Bandwidth Product hFE fT VCE=(--)2V, IC=(--)100mA VCE=(--)10V, IC=(--)300mA Output Capacitance Cob VCB=(--)10V, f=1MHz IC=(--)500mA, IB=(--)10mA Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) V(BR)CBO Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CEO V(BR)EBO ton Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time tstg tf Fall Time Ratings min 200 (--)0.1 μA (--)0.1 μA 560 MHz (9)6 pF (--230)130 (--380)190 mV (--125)90 (--200)135 mV (--)0.81 (--)1.2 (--50)80 IE=(--)10μA, IC=0A See specified Test Circuit. Unit max 420 IC=(--)300A, IB=(--)6mA IC=(--)500mA, IB=(--)10mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ typ V V (--)50 V (--)5 V (36)38 ns (173)332 ns (28)40 ns Switching Time Test Circuit PW=20μs D.C.≤1% IB1 IB2 OUTPUT INPUT VR 50Ω RB + 100μF VBE= --5V RL=24Ω + 470μF VCC=25V IC=20IB1= --20IB2=500mA (For PNP, the polarity is reversed.) Ordering Information Package Shipping memo CPH5518-TL-E Device CPH5 3,000pcs./reel Pb Free CPH5518-TL-H CPH5 3,000pcs./reel Pb Free and Halogen Free No. A0492-2/8 CPH5518 IC -- VCE --0.6 --4mA 0.8 --0.5 --2mA --0.4 --0.3 --0.2 --0.1 4mA 0.5 2mA 0.4 0.3 0.2 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 IC -- VBE --1.0 --0.9 0 [PNP] --0.7 --0.6 --0.5 25°C --0.1 Ta=7 5°C --0.2 --0.6 --0.7 --25°C --0.4 0.3 0.4 0.5 0.6 0.7 0.8 0.9 IC -- VBE 1.0 Collector Current, IC -- A --0.8 0.2 Collector-to-Emitter Voltage, VCE -- V 1.0 IT11441 [NPN] VCE=2V 0.9 --0.3 0.1 IT11440 VCE= --2V --0.9 IB=0mA 0 --1.0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 25°C --25° C --0.1 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A 0.6 5°C 0 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.8 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 5 --0.9 5 DC Current Gain, hFE --25°C 100 7 5 2 3 5 7 --1.0 2 IT01647 f T -- IC [PNP] 0.8 hFE -- IC [NPN] VCE=2V Ta=75°C --25°C 25°C 2 3 5 7 0.1 2 3 5 7 7 5 3 2 100 7 5 1.0 2 3 IT01648 f T -- IC 5 Gain-Bandwidth Product, f T -- MHz 1000 1.0 IT11416 [NPN] VCE=10V 3 2 0.9 Collector Current, IC -- A VCE= --10V 3 3 2 --0.01 10 0.01 3 Collector Current, IC -- A 5 0.7 5 2 2 0.6 7 3 7 --0.1 0.5 100 2 5 0.4 3 3 3 0.3 Base-to-Emitter Voltage, VBE -- V 7 Ta=75°C 2 0.2 1000 VCE= --2V 25°C 10 --0.01 0.1 IT11415 3 2 0 --1.0 [PNP] 7 DC Current Gain, hFE 6mA 0.1 IB=0mA 0 Gain-Bandwidth Product, f T -- MHz 0.7 10mA 8mA Ta= 7 Collector Current, IC -- A 0.9 30 --0.7 A --10m A m 8 ---6mA --0.8 [NPN] mA 2 0m A A A 40m mA --20m 1.0 50mA 0 --3 IC -- VCE [PNP] Collector Current, IC -- A 0m --4 --50 --0.9 A mA --1.0 2 1000 7 5 3 2 100 7 5 3 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 2 3 IT01649 2 0.01 2 3 5 7 0.1 2 3 5 7 Collector Current, IC -- A 1.0 2 3 IT01650 No. A0492-3/8 CPH5518 Cob -- VCB 100 100 [NPN] f=1MHz 7 7 Output Capacitance, Cob -- pF 5 Output Capacitance, Cob -- pF Cob -- VCB [PNP] f=1MHz 3 2 10 7 5 3 5 3 2 10 7 5 3 2 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 5 5 7 0.1 5 7 --100 IT01651 2 3 5 7 1.0 2 3 5 7 10 2 VCE(sat) -- IC [PNP] 3 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 --0.1 7 Ta 5 °C =75 --25 3 °C °C 25 2 --0.01 --0.01 2 3 5 7 2 --0.1 3 5 Collector Current, IC -- A VCE(sat) -- IC --1.0 --1.0 IT11417 0.1 7 5 5°C 7 Ta= 3 25 C --25° 2 2 3 5 7 °C 2 0.1 3 [PNP] VCE(sat) -- IC 5 IC / IB=50 5 3 2 --0.1 5°C 7 Ta= 7 °C --25 5 2 C 25° 3 5 7 --0.1 2 3 5 Collector Current, IC -- A VBE(sat) -- IC --10 --1.0 IT11419 2 Ta= --25°C 7 75°C 5 25°C 3 2 --0.1 --0.01 2 3 5 7 --0.1 2 3 Collector Current, IC -- A 5 7 --1.0 IT01657 0.1 5°C 7 7 Ta= 5 °C --25 25° C 3 2 3 5 7 2 0.1 3 5 VBE(sat) -- IC 10 7 1.0 IT11420 [NPN] IC / IB=50 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 Collector Current, IC -- A [PNP] 5 3 2 0.01 7 IC / IB=50 7 --1.0 7 1.0 IT11418 [NPN] IC / IB=50 2 --0.01 5 Collector Current, IC -- A 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 0.01 0.01 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 5 7 100 IT01652 [NPN] IC / IB=20 3 3 Collector-to-Base Voltage, VCB -- V 5 3 2 1.0 Ta= --25°C 7 5 75°C 25°C 3 2 0.1 0.01 2 3 5 7 0.1 2 3 Collector Current, IC -- A 5 7 1.0 IT01658 No. A0492-4/8 CPH5518 ASO 5 [PNP / NPN] Collector Current, IC -- A IC=1A 1.0 7 5 3 0.1 7 5 2 10 op er 2 3 s 10 DC s s 0μ 0μ 10 50 1m 2 0m m s s ati on Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) For PNP, minus sign is omitted 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V [PNP / NPN] Mounted on a ceramic board (600mm2✕0.8mm) 1.2 Collector Dissipation, PC -- W 3 PC -- Ta 1.4 ICP=3A 1.0 0.9 To tal 0.8 1u 0.6 nit di ss ip ati on 0.4 0.2 0 3 5 7 IT09272 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11421 No. A0492-5/8 CPH5518 Embossed Taping Specification CPH5518-TL-E, CPH5518-TL-H No. A0492-6/8 CPH5518 Outline Drawing CPH5518-TL-E, CPH5518-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A0492-7/8 CPH5518 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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