CPH6223-TL-E

DATA SHEET www.onsemi.com Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single CPH6 CPH6 CASE 318BD CPH6123, CPH6223 ELECTRICAL CONNECTION Features        Adoption of MBIT Process Large Current Capacity Low Collector−to−Emitter Saturation Voltage High−Speed Switching Ultrasmall Package Facilitates Miniaturization in End Products (Mounting Height: 0.9 mm) High Allowable Power Dissipation These are Pb−Free Devices 1, 2, 5, 6 3 1, 2, 5, 6 1: Collector 2: Collector 3: Base 4: Emitter 5: Collector 6: Collector 3 4 4 CPH6123 CPH6223 MARKING DIAGRAMS Applications  DC−DC Converters, Relay Drivers, Lamp Drivers, Motor Drivers, Symbol Parameter VCBO Conditions Ratings Unit Collector−to−Base Voltage (−50)100 V VCES Collector−to− Emitter Voltage (−50)100 V VCEO Collector−to− Emitter Voltage (−)50 V VEBO Emitter−to−Base Voltage (−)6 V IC Collector Current (−)3 A ICP Collector Current (Pulse) (−)6 A IB Base Current (−)600 mA PC Collector Dissipation 1.3 W Tj Junction Temperature 150 C Tstg Storage Temperature −55 to +150 C When mounted on ceramic substrate (600 mm2  0.8 mm) CPH6123 LOT No. DA ABSOLUTE MAXIMUM RATINGS (at TA = 25C) LOT No. BA Strobe CPH6223 ORDERING INFORMATION Package Shipping† CPH6123−TL−E CPH6 (Pb−Free) 3 000 / Tape & Reel CPH6223−TL−E CPH6 (Pb−Free) 3 000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.  Semiconductor Components Industries, LLC, 2013 August, 2022 − Rev. 2 1 Publication Order Number: CPH6123/D CPH6123, CPH6223 ELECTRICAL CHARACTERISTICS (at TA = 25C) Symbol Parameter Test Conditions Min Typ Max Unit ICBO Collector Cutoff Current VCB = (−)40 V, IE = 0 A (−)1 mA IEBO Emitter Cutoff Current VEB = (−)4 V, IC = 0 A (−)1 mA hFE DC Current Gain VCE = (−)2 V, IC = (−)100 mA Gain−Bandwidth Product VCE = (−)10 V, IC = (−)500 mA Output Capacitance VCB = (−)10 V, f = 1 MHz Collector−to−Emitter Saturation Voltage IC = (−)1 A, IB = (−)50 mA (−115) 90 (−230) 130 mV IC = (−)2 A, IB = (−) 100 mA (−240) 160 (−650) 240 mV VBE(sat) Base−to−Emitter Saturation Voltage IC = (−)2 A, IB = (−)100 mA (−)0.88 (−)1.2 V V(BR)CBO Collector−to−Base Breakdown Voltage IC = (−)10 mA, IE = 0 A (−50) 100 V V(BR)CES Collector−to−Emitter Breakdown Voltage IC = (−)100 mA, RBE = 0 W (−50) 100 V V(BR)CEO Collector−to−Emitter Breakdown Voltage IC = (−)1 mA, RBE =  (−)50 V V(BR)EBO Emitter−to−Base Breakdown Voltage IE = (−)10 mA, IC = 0 A (−)6 V ton Turn−On Time See specified Test Circuit. tstg Storage Time fT Cob VCE(sat)1 VCE(sat)2 tf 200 560 (390) 380 MHz (24) 13 pF (30) 35 ns (230) 300 ns (18) 25 ns Fall Time Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. IB1 PW = 20 ms D.C.  1% IB1 PW = 20 ms D.C.  1% OUTPUT IB2 INPUT OUTPUT IB2 INPUT RB RB RL VR RL VR 50 W 50 W + 100 mF VBE = 5 V + + + 470 mF 100 mF VCC = −25 V VCC = 25 V VBE = −5 V IC = −10 IB1 = 10 IB2 = −1 A IC = 10 IB1 = −10 IB2 = 1 A CPH6123 CPH6223 Figure 1. Switching Time Test Circuit www.onsemi.com 2 470 mF CPH6123, CPH6223 TYPICAL PERFORMANCE CHARACTERISTICS 5.0 −40 mA CPH6123 −30 mA −20 mA −1.8 IC, Collector Current (A) −1.6 −8 mA −6 mA −1.4 −10 mA −1.2 −1.0 −4 mA −0.8 −2 mA −0.6 −0.4 −0.2 0 40 mA 3.5 3.0 20 mA 2.5 10 mA 2.0 5 mA 1.5 1.0 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1.0 CPH6223 0 0.2 VCE, Collector−to−Emitter Voltage (V) 0.4 0.6 1.0 1.2 1.4 1.6 1.8 2.0 3.0 IC, Collector Current (A) CPH6223 IC, Collector Current (A) CPH6123 VCE = −2 V −2.5 TA = 75C −2.0 25C −25C −1.5 −1.0 VCE = 2 V 2.5 TA = 75C 2.0 25C −25C 1.5 1.0 0.5 −0.5 0 −0.2 −0.4 −0.6 −0.8 −1.0 0 −1.2 0 0.2 VBE, Base−to−Emitter Voltage (V) 0.4 0.8 1.0 1.2 Figure 5. IC − VBE 1000 1000 CPH6123 7 TA = 75C 7 VCE = −2 V 25C hFE, DC Current Gain 5 3 −25C 2 100 CPH6223 VCE = 2 V TA = 75C 5 25C 3 −25C 2 100 7 −0.01 0.6 VBE, Base−to−Emitter Voltage (V) Figure 4. IC − VBE hFE, DC Current Gain 0.8 Figure 3. IC − VCE −3.0 5 IB = 0 VCE, Collector−to−Emitter Voltage (V) Figure 2. IC − VCE 0 60 mA 4.0 0.5 IB = 0 0 100 mA 80 mA 4.5 IC, Collector Current (A) −2.0 2 3 5 7 −0.1 2 3 5 7 −1.0 2 3 7 5 0.01 IC, Collector Current (A) 2 3 5 7 0.1 2 3 5 7 1 IC, Collector Current (A) Figure 6. hFE − IC Figure 7. hFE − IC www.onsemi.com 3 2 3 5 CPH6123, CPH6223 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 1000 7 CPH6123 fT, Gain−Bandwidth Product (MHz) fT, Gain−Bandwidth Product (MHz) 1000 VCE = −10 V 5 3 2 100 7 5 3 −0.01 2 3 5 7 −0.1 2 3 5 7 2 −1.0 3 CPH6223 7 3 2 100 7 5 3 2 10 0.01 5 VCE = 10 V 5 2 3 5 7 IC, Collector Current (A) 5 7 2 1.0 3 5 Figure 9. fT − IC 100 100 CPH6123 f = 1 MHz Cob, Output Capacitance (pF) Cob, Output Capacitance (pF) 3 IC, Collector Current (A) Figure 8. fT − IC 7 2 0.1 5 3 2 7 CPH6223 f = 1 MHz 5 3 2 10 7 2 3 5 7 2 3 −10 VCB, Collector−to−Base Voltage (V) 5 7 Figure 10. Cob − VCB 5 3 2 CPH6123 IC / IB = 20 −1000 7 5 3 2 −100 TA = 75C 7 5 25C 3 −25C 2 −10 −0.01 2 3 5 7 −0.1 2 3 5 7 −1.0 IC, Collector Current (A) 2 3 5 5 −100 7 −10 0.1 VCE(sat), Collector−to−Emitter Saturation Voltage (mV) VCE(sat), Collector−to−Emitter Saturation Voltage (mV) 10 −1.0 2 3 5 7 2 3 5 7 10 2 3 1.0 VCB, Collector−to−Base Voltage (V) 7100 Figure 11. Cob − VCB 5 3 CPH6223 IC / IB = 20 2 100 TA = 75C 7 5 25C 3 −25C 2 10 0.01 Figure 12. VCE(sat) − IC 2 3 5 7 0.1 2 3 5 7 1.0 IC, Collector Current (A) Figure 13. VCE(sat) − IC www.onsemi.com 4 5 2 3 5 7 10 CPH6123, CPH6223 7 5 VCE(sat), Collector−to−Emitter Saturation Voltage (mV) VCE(sat), Collector−to−Emitter Saturation Voltage (mV) TYPICAL PERFORMANCE CHARACTERISTICS (Continued) CPH6123 IC / IB = 50 3 2 −1000 7 5 3 TA = 75C 2 25C −100 7 5 −25C 3 2 −10 −0.01 2 3 5 7 −0.1 2 3 5 7 −1.0 2 3 5 7 −10 IC, Collector Current (A) VBE(sat), Base−to−Emitter Saturation Voltage (mV) VBE(sat), Base−to−Emitter Saturation Voltage (mV) Figure 14. VCE(sat) − IC 3 CPH6123 IC / IB = 50 2 −1.0 TA = 75C 25C 7 5 3 2 3 5 7 −0.1 2 3 5 7 −1.0 5 CPH6223 IC / IB = 50 3 2 TA = 75C 100 7 25C 2 3 5 7 −10 IC, Collector Current (A) 3 2 10 0.01 2 3 5 IC, Collector Current (A) 3 1 ms ICP = −6 A IC = −3 A 500 ms 2 DC Operation 3 10 ms 2 −0.1 7 5 3 2 CPH6123 100 ms TA = 25C Single Pulse Mounted on a ceramic board (600 mm2  0.8 mm) −0.01 −0.1 2 3 5 7 2 3 5 7 3 5 7 2 1.0 3 5 IC, Collector Current (A) 3 CPH6223 IC / IB = 50 2 TA = 75C 25C 7 −25C 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IC, Collector Current (A) 10 < 10 ms 100 ms −1.0 7 5 2 0.1 Figure 17. VBE(sat) − IC 7 5 3 IC, Collector Current (A) 7 5 7 Figure 15. VCE(sat) − IC Figure 16. VBE(sat) − IC −10 −25C 5 −1.0 −25C −0.01 7 2 3 5 7 −100 500 ms IC = 3 A 2 7 5 DC Operation 3 10 ms 2 0.1 7 5 3 0.01 0.1 Figure 18. ASO CPH6223 100 ms TA = 25C Single Pulse Mounted on a ceramic board (600 mm2  0.8 mm) 2 3 5 7 2 3 5 7 www.onsemi.com 2 3 1.0 10 VCE, Collector−to−Emitter Voltage (V) Figure 19. ASO 5 < 10 ms 100 ms 1.0 2 −1.0 −10 VCE, Collector−to−Emitter Voltage (V) 1 ms ICP = 6 A 5 7 100 CPH6123, CPH6223 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) PC, Collector Dissipation (W) 1.4 Mounted on Ceramic Board (600 mm2  0.8 mm) 1.2 1.0 0.8 0.6 0.4 0.2 CPH6123/CPH6223 0 0 20 40 60 80 100 120 140 160 TA, Ambient Temperature (5C) Figure 20. PC − TA www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS CPH6 CASE 318BD ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON65440E CPH6 DATE 30 NOV 2011 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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