CPH6355-TL-W

CPH6355 Power MOSFET –30V, 169mΩ, –3A, Single P-Channel Features • Low ON-Resistance • 4V Drive • Pb-Free, Halogen Free and RoHS Compliance www.onsemi.com VDSS RDS(on) Max 169mΩ@ −10V ID Max −30V 276mΩ@ −4.5V −3A 313mΩ@ −4V Specifications Electrical Connection P-Channel Absolute Maximum Ratings at Ta = 25°C Symbol Unit Value VDSS −30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID −3 A IDP −12 A PD 1.6 W 150 °C −55 to +150 °C Drain to Source Voltage Drain Current (Pulse) PW≤10μs, duty cycle≤1% 1, 2, 5, 6 3 Power Dissipation When mounted on ceramic substrate 4 (1500mm2 × 0.8mm) Junction Temperature Tj Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Packing Type : TL Parameter Symbol Value Unit TL Junction to Ambient When mounted on ceramic substrate (1500mm2 × 0.8mm) Marking XF Thermal Resistance Ratings 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain LOT No. Parameter RθJA 78.1 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 3 1 Publication Order Number : CPH6355/D CPH6355 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value min typ max −30 Unit Drain to Source Breakdown Voltage V(BR)DSS ID=−1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=−30V, VGS=0V −1 μA Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Gate Threshold Voltage VGS(th) VDS=−10V, ID=−1mA −2.6 V Forward Transconductance gFS VDS=−10V, ID=−1.5A 2.3 RDS(on)1 ID=−1.5A, VGS=−10V 130 169 mΩ RDS(on)2 ID=−0.5A, VGS=−4.5V 197 276 mΩ RDS(on)3 ID=−0.5A, VGS=−4V 223 313 mΩ Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance V −1.2 S 172 pF 51 pF Crss 36 pF Turn-ON Delay Time td(on) 4.6 ns Rise Time tr 6.6 ns Turn-OFF Delay Time td(off) 19.4 ns Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS=−10V, f=1MHz See specified Test Circuit VDS=−15V, VGS=−10V, ID=−3A 11.4 ns 3.9 nC 0.6 nC 0.8 IS=−3A, VGS=0V −0.95 nC −1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --10V VIN VDD= --15V ID= --1.5A RL=10Ω VIN D PW=10μs D.C.≤1% VOUT G P.G CPH6355 50Ω S www.onsemi.com 2 CPH6355 www.onsemi.com 3 CPH6355 www.onsemi.com 4 CPH6355 Package Dimensions CPH6355-TL-H / CPH6355-TL-W CPH6 CASE 318BD ISSUE O Unit : mm 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 2.4 1.4 0.6 0.95 0.95 ORDERING INFORMATION Device CPH6355-TL-H CPH6355-TL-W Package CPH6, SC-74 SOT-26, SOT-457 Shipping Note 3,000 pcs. / Tape & Reel Pb-Free and Halogen Free Note on usage : Since the CPH6355 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 5