CPH6538-TL-H

Ordering number : ENA1757A CPH6538 Bipolar Transistor http://onsemi.com 30V, 0.7A, Low VCE(sat) NPN Dual CPH6 Features • Small-sized package with two NPN transistors (30C02CH equivalency) contained in one package • VCEO=30V, IC=0.7A • Low Collector-to-Emitter Saturation Voltage VCE(sat)=85mV(typ.)@IC=0.2A High-speed switching tf=40ns(typ.)@IC=0.3A Halogen free Compliance • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg 40 V 30 V 5 700 When mounted on ceramic substrate (600mm2×0.8mm) 1unit V mA 1.4 A 0.6 W 150 °C -55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7018A-006 • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL 4 Marking 0.9 4F 1 2 0.95 LOT No. 0.05 1.6 0.2 0.6 2.8 0.2 0.6 5 CPH6538-TL-H 0.15 2.9 6 TL 3 0.4 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 Electrical Connection 6 5 4 1 2 3 CPH6 Semiconductor Components Industries, LLC, 2013 August, 2013 62012 TKIM/70710EA TKIM TC-00002404 No. A1757-1/6 CPH6538 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Ratings Conditions min typ ICBO IEBO VCB=30V, IE=0A VEB=4V, IC=0A VCE=2V, IC=50mA Gain-Bandwidth Product hFE fT VCE=2V, IC=50mA 540 Output Capacitance Cob 3.3 Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=10V, f=1MHz IC=200mA, IB=10mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time 300 IC=200mA, IB=10mA Unit max 100 nA 100 nA 800 MHz pF 85 190 mV 0.9 1.2 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 40 V IC=1mA, RBE=∞ 30 V V(BR)EBO ton IE=10μA, IC=0A 5 tstg tf See specified Test Circuit. V 35 ns 255 ns 40 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 RB VR RL 50Ω + 470μF + 220μF VBE= --5V VCC=12V 20IB1= --20IB2=IC=300mA Ordering Information Device CPH6538-TL-H memo 3,000pcs./reel Pb Free and Halogen Free 5mA A 1mA 400μA 200 200μA 100 0 0 600 500 400 300 --25°C 2mA 700 Ta=7 5°C 25°C 3mA 400 300 VCE=2V 7mA Collector Current, IC -- mA A 15m A 30m A 20mA 10m IC -- VBE 800 50m Collector Current, IC -- mA 500 Shipping CPH6 IC -- VCE 700 600 Package 200 100 IB=0A 100 200 300 400 500 600 700 800 Collector-to-Emitter Voltage, VCE -- mV 900 1000 IT05082 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 IT05083 No. A1757-2/6 CPH6538 hFE -- IC 1000 VCE=2V 25°C 5 --25°C 3 2 100 1.0 2 3 2 5 7 10 3 5 7 100 2 3 Collector Current, IC -- mA 3 2 °C 7 5°C =7 Ta 5°C --2 3 2 10 1.0 2 5 7 10 3 2 5 7 100 3 2 Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF 5 3 2 3 5 7 2 10 3 Collector-to-Base Voltage, VCB -- V 2 s op er ati on 0.1 ms Collector Current, IC -- A s 0m 10 2 10 7 5 3 2 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 1unit 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V 2 3 5 7 100 2 3 5 7 1000 IT05085 5 3 2 1.0 Ta= --25°C 7 5 75°C 25°C 3 2 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05087 fT -- IC VCE=10V 7 5 3 2 2 3 5 7 10 2 3 5 7 100 2 Collector Current, IC -- mA 3 5 7 1000 IT05089 PC -- Ta Mounted on a ceramic board (600mm2✕0.8mm) 1unit 0.6 s 0μ DC 3 50 7 5 s 5 7 10 IC / IB=20 ICP=1.4A 1m 3 VBE(sat) -- IC 0.7 IC=0.7A 2 IT05088 0μ 10 1.0 3 2 100 1.0 5 ASO 3 10 7 5 1000 7 2 5°C --2 Collector Current, IC -- mA f=1MHz 1.0 1.0 7 Ta= IT05086 Cob -- VCB 10 5°C 3 2 0.1 1.0 5 7 1000 3 °C 7 5 5 25 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 25 100 7 5 Collector Current, IC -- mA IC / IB=50 100 3 2 IT05084 VCE(sat) -- IC 1000 IC / IB=20 1.0 1.0 5 7 1000 Collector Dissipation, PC -- W DC Current Gain, hFE 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Ta=75°C VCE(sat) -- IC 1000 7 5 0.5 0.4 0.3 0.2 0.1 0 3 5 IT10759 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10000 No. A1757-3/6 CPH6538 Embossed Taping Specification CPH6538-TL-H No. A1757-4/6 CPH6538 Outline Drawing CPH6538-TL-H Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1757-5/6 CPH6538 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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