D45C12 (PNP),
D44C12 (NPN)
Complementary Silicon
Power Transistor
The D45C12 and D44C12 are for general purpose driver or medium
power output stages in CW or switching applications.
Features
•
•
•
•
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4.0 AMPERE COMPLEMENTARY
SILICON POWER
TRANSISTORS 80 VOLTS
Low Collector−Emitter Saturation Voltage − 0.5 V (Max)
High ft for Good Frequency Response
Low Leakage Current
Pb−Free Packages are Available*
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4
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
80
Vdc
Collector−Emitter Voltage
VCES
90
Vdc
Emitter Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
Peak (Note 1)
IC
4.0
6.0
Adc
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TA = 25°C
PD
30
1.67
W
W/°C
TJ, Tstg
−55 to 150
°C
Operating and Storage Junction
Temperature Range
TO−220AB
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Collector
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Thermal Resistance,
Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8 in from Case for 5 Sec
Symbol
Max
Unit
RqJC
4.2
°C/W
RqJA
75
°C/W
TL
275
°C
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.
D4xC12G
AYWW
1
Base
3
Emitter
2
Collector
x
A
Y
WW
G
= 4 or 5
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 3
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
D45C12/D
D45C12 (PNP), D44C12 (NPN)
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
DC Current Gain
(VCE = 1.0 Vdc, IC = 0.2 Adc)
(VCE = 1.0 Vdc, IC = 1.0 Adc)
(VCE = 1.0 Vdc, IC = 2.0 Adc)
Min
Max
40
20
20
120
−
−
Unit
hFE
−
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector Cutoff Current (VCE = Rated VCES, VBE = 0)
ICES
−
−
0.1
mA
Emitter Cutoff Current (VEB = 5.0 Vdc)
IEBO
−
−
10
mA
Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 50 mAdc)
VCE(sat)
−
0.135
0.5
Vdc
Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc)
VBE(sat)
−
0.85
1.3
Vdc
Ccb
−
125
−
pF
fT
−
40
−
MHz
td + tr
−
50
75
ns
Storage Time (IC = 1.0 Adc, IB1 = IB2 = 0.1 Adc)
ts
−
350
550
ns
Fall Time (IC = 1.0 Adc, IB1 = IB2 = 0.1 Adc)
tf
−
50
75
ns
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector Capacitance (VCB = 10 Vdc, f = 1.0 MHz)
Gain Bandwidth Product (IC = 20 mA, VCE = 4.0 Vdc, f = 20 MHz)
SWITCHING TIMES
Delay and Rise Times (IC = 1.0 Adc, IB1 = 0.1 Adc)
ORDERING INFORMATION
Device
Shipping†
Package
D45C12
TO−220AB
D45C12G
TO−220AB
(Pb−Free)
D44C12
TO−220AB
D44C12G
TO−220AB
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
200
IC, COLLECTOR CURRENT (AMPS)
hFE, DC CURRENT GAIN
VCE = 1.0 Vdc
TJ = 25°C
100
90
80
70
60
50
40
30
20
0.04
0.07 0.1
0.2 0.3 0.4
0.7 1.0
IC, COLLECTOR CURRENT (AMPS)
2.0
10
5.0
3.0
2.0
0.1 ms
dc
1.0
0.5
0.3
0.2
0.1
1.0 ms
TC ≤ 70°C
DUTY CYCLE ≤ 50%
0.05
0.03
0.02
0.01
1.0
3.0 4.0
1.0 ms
10 ms
Figure 1. Typical DC Current Gain
50
5.0 7.0 10
20 30
2.0 3.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
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2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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