DAN222G

DAN222, NSVDAN222 Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−75 package which is designed for low power surface mount applications, where board space is at a premium. http://onsemi.com CATHODE 3 Features • Fast trr • Low CD • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 2 ANODE 1 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit VR 80 Vdc VRM 80 Vdc IF 100 mAdc Peak Forward Current IFM 300 mAdc Peak Forward Surge Current (Note 1) IFSM 2.0 Adc Symbol Max Unit Power Dissipation PD 150 mW Junction Temperature TJ 150 °C/W Storage Temperature Range Tstg −55 to +150 °C Reverse Voltage Peak Reverse Voltage Forward Current SC−75/SOT−416 CASE 463 STYLE 3 MARKING DIAGRAM N9 M G G THERMAL CHARACTERISTICS Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. t = 1 mS 1 N9 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† DAN222G SC−75 (Pb−Free) 3000 / Tape & Reel DAN222T1G SC−75 (Pb−Free) 3000 / Tape & Reel NSVDAN222T1G SC−75 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 7 1 Publication Order Number: DAN222/D DAN222, NSVDAN222 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V − 0.1 mAdc Forward Voltage VF IF = 100 mA − 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 mA 80 − Vdc Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz − 3.5 pF trr (Note 2) IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR − 4.0 ns Reverse Recovery Time 2. trr Test Circuit on following page. TYPICAL ELECTRICAL CHARACTERISTICS 10 100 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = -40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 10 0 1.2 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Current 1.0 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 0.9 0.8 0.7 0.6 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance http://onsemi.com 2 8 50 DAN222, NSVDAN222 tr tp trr IF t t 10% A RL Irr = 0.1 IR 90% VR tp = 2 ms tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT Figure 4. Reverse Recovery Time Test Circuit for the DAN222 http://onsemi.com 3 IF = 5.0 mA VR = 6 V RL = 100 W OUTPUT PULSE MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE G 3 1 2 DATE 07 AUG 2015 SCALE 4:1 −E− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D HE C 0.20 (0.008) E A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.065 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.060 0.063 0.067 MIN 0.027 0.000 0.006 0.004 0.061 0.027 GENERIC MARKING DIAGRAM* A1 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M G STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE 1 XX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.508 0.020 0.787 0.031 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB15184C SC−75/SOT−416 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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