DAN222T1

DAN222 Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications, where board space is at a premium. http://onsemi.com CATHODE 3 Features •Fast trr •Low CD •Pb-Free Packages are Available 1 2 ANODE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit VR 80 Vdc VRM 80 Vdc IF 100 mAdc Peak Forward Current IFM 300 mAdc Peak Forward Surge Current (Note 1) IFSM 2.0 Adc Symbol Max Unit Power Dissipation PD 150 mW Junction Temperature TJ 150 °C/W Storage Temperature Range Tstg -55 to +150 °C Reverse Voltage Peak Reverse Voltage Forward Current 1 SC-75/SOT-416 CASE 463 STYLE 3 THERMAL CHARACTERISTICS Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. t = 1 mS MARKING DIAGRAM N9 MG G 1 N9 = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† DAN222 SC-75/SOT-416 3000/Tape & Reel DAN222G SC-75/SOT-416 3000/Tape & Reel (Pb-Free) DAN222T1 SC-75/SOT-416 3000/Tape & Reel DAN222T1G SC-75/SOT-416 3000/Tape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 January, 2008 - Rev. 5 1 Publication Order Number: DAN222/D DAN222 ELECTRICAL CHARACTERISTICS (TA = 25°C) Symbol Characteristic Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V - 0.1 mAdc Forward Voltage VF IF = 100 mA - 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 mA 80 - Vdc Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz - 3.5 pF trr(2) IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR - 4.0 ns Reverse Recovery Time 2.trr Test Circuit on following page. TYPICAL ELECTRICAL CHARACTERISTICS 10 100 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = -40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 10 0 1.2 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Current 1.0 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 0.9 0.8 0.7 0.6 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance http://onsemi.com 2 8 50 DAN222 tr tp trr IF t t 10% A RL Irr = 0.1 IR 90% VR tp = 2 ms tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT Figure 4. Reverse Recovery Time Test Circuit for the DAN222 http://onsemi.com 3 IF = 5.0 mA VR = 6 V RL = 100 W OUTPUT PULSE DAN222 PACKAGE DIMENSIONS SC-75/SOT-416 CASE 463-01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. -E2 3 b 3 PL 0.20 (0.008) e -D- DIM A A1 b C D E e L HE 1 M D 0.20 (0.008) E HE C INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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