DTA114TXV3T1G

DTA114EXV3T1 Series Preferred Devices Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SC−89 package which is designed for low power surface mount applications. • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape & Reel Lead−Free Plating (Pure Sn) http://onsemi.com PNP SILICON DIGITAL TRANSISTORS PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current 3 2 1 SC−89 CASE 463C STYLE 1 MARKING DIAGRAM 3 xx D 1 2 xx = Specific Device Code (See Marking Table on page 2) D = Date Code Preferred devices are recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. 0 1 Publication Order Number: DTA114EXV3T1/D DTA114EXV3T1 Series DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping† DTA114EXV3T1 DTA124EXV3T1 DTA144EXV3T1 DTA114YXV3T1 DTA114TXV3T1 DTA143TXV3T1 DTA144WXV3T1 DTA144TXV3T1 DTA143XXV3T1 6A 6B 6C 6D 6E 6F 6P 6T 6R 10 22 47 10 10 4.7 47 47 4.7 10 22 47 47 ∞ ∞ 22 ∞ 10 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25°C Derate above 25°C Max Unit 200 1.6 mW mW/°C 600 °C/W 300 2.4 mW mW/°C RθJA 400 °C/W TJ, Tstg −55 to +150 °C PD Thermal Resistance, Junction to Ambient (Note 1) RθJA Total Device Dissipation, FR−4 Board (Note 2) @ TA = 25°C Derate above 25°C PD Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 × 1.0 Inch Pad. http://onsemi.com 2 DTA114EXV3T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 0.13 0.2 1.0 mAdc Collector−Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 80 160 20 60 100 140 140 250 250 140 250 35 − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 − − OFF CHARACTERISTICS DTA114EXV3T1 DTA124EXV3T1 DTA144EXV3T1 DTA114YXV3T1 DTA114TXV3T1 DTA143TXV3T1 DTA144WXV3T1 DTA144TXV3T1 DTA143XXV3T1 ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTA114EXV3T1 DTA124EXV3T1 DTA144EXV3T1 DTA114YXV3T1 DTA114TXV3T1 DTA143TXV3T1 DTA144WXV3T1 DTA144TXV3T1 DTA143XXV3T1 Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5.0 mA) DTA123EXV3T1 (IC = 10 mA, IB = 1.0 mA) DTA114TXV3T1/ DTA143TXV3T1/ DTA143ZXV3T1/DTA124XXV3T1/DTA143EXV3T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ) VOL DTA114EXV3T1 DTA124EXV3T1 DTA114YXV3T1 DTA114TXV3T1 DTA143TXV3T1 DTA144EXV3T1 DTA144WXV3T1 DTA144TXV3T1 DTA143XXV3T1 Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) DTA114TXV3T1 DTA143TXV3T1 VOH 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. http://onsemi.com 3 Vdc Vdc Vdc DTA114EXV3T1 Series ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted) Characteristic Input Resistor DTA114EXV3T1 DTA124EXV3T1 DTA144EXV3T1 DTA114YXV3T1 DTA114TXV3T1 DTA143TXV3T1 DTA144WXV3T1 DTA144TXV3T1 DTA143XXV3T1 Resistor Ratio DTA114EXV3T1/DTA124EXV3T1/ DTA144EXV3T1 DTA114YXV3T1 DTA114TXV3T1/DTA143TXV3T1/ DTA144TXV3T1 DTA144WXV3T1 DTA143XXV3T1 Symbol Min Typ Max Unit R1 7.0 15.4 32.9 7.0 7.0 3.3 32.9 32.9 3.3 10 22 47 10 10 4.7 47 47 4.7 13 28.6 61.1 13 13 6.1 61.1 61.1 6.1 kΩ R1/R2 0.8 1.0 1.2 0.17 − 0.21 − 0.25 − 1.7 0.38 2.1 0.47 2.6 0.56 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 RθJA = 600°C/W 0 −
50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 1. Derating Curve 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 Figure 2. Normalized Thermal Response http://onsemi.com 4 10 100 1000 DTA114EXV3T1 Series 1000 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EXV3T1 TA=−25°C
0.1 25°C 75°C
0.01 0
20 25°C 100 10 −25°C 10 IC, COLLECTOR CURRENT (mA) Figure 3. VCE(sat) versus IC Figure 4. DC Current Gain 50 1 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=−25°C 10 1
0.1
0.01
0.001 50 100 VO = 5 V 0 1
2
6
7 3
4
5 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0 10
8
9 Figure 6. Output Current versus Input Voltage 10
0.1 100 25°C 75°C Figure 5. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75°C IC, COLLECTOR CURRENT (mA)
40 4 0 VCE = 10 V
20
30 IC, COLLECTOR CURRENT (mA)
40
50 Figure 7. Input Voltage versus Output Current http://onsemi.com 5 10 DTA114EXV3T1 Series 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTA124EXV3T1 IC/IB = 10 1 25°C TA=−25°C 75°C
0.1 0.01 0
40
20 IC, COLLECTOR CURRENT (mA) TA=75°C 10 1 Figure 9. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=−25°C 10 1
0.1
0.01
0.001 50 Figure 10. Output Capacitance 100 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 VO = 5 V 0 1
2
3
4
5
6
7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 25°C 75°C 1 0 10
8
9 Figure 11. Output Current versus Input Voltage TA=−25°C
0.1 100 IC, COLLECTOR CURRENT (mA) Figure 8. VCE(sat) versus IC 0 25°C −25°C 100 10
50 VCE = 10 V
20
30 IC, COLLECTOR CURRENT (mA)
40
50 Figure 12. Input Voltage versus Output Current http://onsemi.com 6 10 DTA114EXV3T1 Series 1 1000 IC/IB = 10 TA=−25°C 25°C 75°C
0.1
0.01 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTA144EXV3T1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 13. VCE(sat) versus IC Figure 14. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0.2 0 0 −25°C 1
0.1
0.01 Figure 15. Output Capacitance VO = 5 V 1 0 2 3
4
5
6
7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10
8 9 Figure 16. Output Current versus Input Voltage 100 10 25°C TA=75°C 10
0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 100 f = 1 MHz lE = 0 V TA = 25°C 0.8 100
20
30 IC, COLLECTOR CURRENT (mA)
40
50 Figure 17. Input Voltage versus Output Current http://onsemi.com 7 10 DTA114EXV3T1 Series 1 180 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YXV3T1 TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25°C 140 −25°C 120 100 80 60 40 20 0 80 TA=75°C VCE = 10 V 160 2 1 4 6 Figure 18. VCE(sat) versus IC 100 TA=75°C 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 10 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25°C TA=−25°C 75°C 1 0 10 8 10 Figure 21. Output Current versus Input Voltage 10 0.1 25°C −25°C 1 50 Figure 20. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 80 90 100 Figure 19. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 22. Input Voltage versus Output Current http://onsemi.com 8 DTA114EXV3T1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = −25°C 75°C 0.1 25°C IC/IB = 10 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS — DTA144WXV3T1 1000 75°C TA = −25°C 100 25°C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 23. Maximum Collector Voltage versus Collector Current Figure 24. DC Current Gain 100 1.4 Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 1.2 1.0 0.8 0.6 0.4 0.2 0 75°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = −25°C 10 25°C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 5 6 7 8 9 10 11 Vin, INPUT VOLTAGE (VOLTS) Figure 25. Output Capacitance Figure 26. Output Current versus Input Voltage +12 V 100 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V Typical Application for PNP BRTs TA = −25°C 10 75°C LOAD 1 25°C 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 27. Input Voltage versus Output Current Figure 28. Inexpensive, Unregulated Current Source http://onsemi.com 9 DTA114EXV3T1 Series PACKAGE DIMENSIONS SC−89 CASE 463C−03 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. A −X− 3 1 B −Y− S 2 K DIM A B C D G H J K L M N S G 2 PL D 0.08 (0.003) M 3 PL X Y N M C J −T− SEATING PLANE MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF −−− −−− 10 _ −−− −−− 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 STYLE 1: PIN 1. BASE 2. EMITTER 3. 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