ECH8420-TL-H

DATA SHEET www.onsemi.com MOSFET – Power, N-Channel 20 V, 14 A, 6.8 mW, Single ECH8 ECH8420 SOT−28FL / ECH8 CASE 318BF Features • • • • ON−resistance RDS(on)1 = 5.2 mW (Typ.) 1.8 V Drive Protection Diode in This Device is Pb−Free and Halide Free MARKING DIAGRAM ZA Lot No. ELECTRICAL CONNECTION 8 7 6 5 1 2 3 4 Package Dimension Unit : mm (typ) 7011A−002 ECH8420−TL−H 0.25 TopView 2.9 8 0.15 5 PACKING TYPE: TL 2.3 0.25 2.8 0 to 0.02 4 1 0.65 0.3 0.9 TL ORDERING INFORMATION 0.07 Device Package Shipping† ECH8420−TL−H SOT−28FL / ECH8 3000 / (Pb−Free, Tape & Reel Halide Free) Bottom View †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ECH8 Figure 1. Package Dimensions © Semiconductor Components Industries, LLC, 2013 August, 2022 − Rev. 2 1 Publication Order Number: ECH8420/D ECH8420 Specifications ABSOLUTE MAXIMUM RATINGS at TA = 25°C Parameter Symbol Conditions Ratings Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGSS ±12 V 14 A 50 A 1.6 W Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PW ≤ 10 ms, duty cycle ≤ 1% PD When mounted on ceramic substrate (900 mm2 × 0.8 mm) Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS at TA = 25°C Ratings Typ Max Unit − V Parameter Symbol Drain−to−Source Breakdown Voltage V(BR)DSS ID = 1 mA, VGS = 0 V 20 − Zero−Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0V − − 1 mA Gate−to−Source Leakage Current IGSS VGS = ±8 V, VDS = 0 V − − ±10 mA VGS(off) VDS = 10 V, ID = 1 mA Cutoff Voltage Conditions Min 0.4 − 1.3 V | yfs | VDS = 10 V, ID = 7 A − 14.5 − S RDS(on)1 ID = 7 A, VGS = 4.5 V − 5.2 6.8 mW RDS(on)2 ID = 4 A, VGS = 2.5 V − 8 11.5 mW RDS(on)3 ID = 2 A, VGS = 1.8 V − 15 22.5 mW Input Capacitance Ciss VDS = 10 V, f = 1 MHz − 2430 − pF Output Capacitance Coss − 410 − pF Reverse Transfer Capacitance Crss − 330 − pF Turn−ON Delay Time td(on) Forward Transfer Admittance Static Drain−to−Source On−State Resistance Rise Time Turn−OFF Delay Time Fall Time Total Gate Charge See specified Test Circuit. − 21 − ns tr − 88 − ns td(off) − 210 − ns tf − 115 − ns − 29 − nC − 4.8 − nC − 8.7 − nC − 0.75 1.2 V Qg Gate−to−Source Charge Qgs Gate−to−Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS = 10 V, VGS = 4.5 V, ID = 14 A IS = 14 A, VGS = 0 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 ECH8420 Switching Time Test Circuit 4.5 V 0V VIN VDD = 10 V ID = 7 A RL = 1.43 W VIN D PW = 10 ms D.C. ≤ 1% VOUT G ECH8420 P.G 50 W S Figure 2. Switching Time Test Circuit www.onsemi.com 3 ECH8420 TYPICAL CHARACTERISTICS 14 1.8 V 10.0 V 2.5 V 10 ID, Drain Current (A) ID, Drain Current (A) 12 4.5 V 6.0 V 8 8.0 V 6 4 VGS = 1.5 V 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 VDS = 10 V TA = 75°C 25°C −25°C 0 1.0 0.2 0.4 VDS, Drain−to−Source Voltage (V) ⎮yFS, Forward Transfer Admittance (S) RDS(on), Static Drain−to−Source, On−State Resistance (mW) 25 20 15 10 5 2 4 6 8 20 VGS = 2.5 V, ID = 4 A 10 5 VGS = 4.5 V, ID = 7 A 0 −50 12 0 50 100 150 Figure 6. RDS(on) − TA VDS = 10 V 25°C 75°C 3 2 1.0 7 5 3 2 5 7 0.1 2 3 5 7 1.0 1.8 15 Figure 5. RDS(on) − VGS TA = −25°C 1.6 VGS = 1.8 V, ID = 2 A TA, Ambient Temperature (C) 3 2 0.1 0.01 2 3 1.4 VGS, Gate−to−Source Voltage (V) 100 7 5 10 7 5 10 IS, Source Current (A) RDS(on), Static Drain−to−Source, On−State Resistance (mW) 4A 7A 0 1.2 25 TA = 25°C ID = 2 A 0 1.0 Figure 4. ID − VGS 40 30 0.8 VGS, Gate−to−Source Voltage (V) Figure 3. ID − VDS 35 0.6 2 3 5 7 10 2 3 5 7 100 100 7 5 3 2 1.0 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 VGS = 0 V TA = 75°C −25°C 25°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VSD, Diode Forward Voltage (V) ID, Drain Current (A) Figure 7. yfs − ID Figure 8. IS − VSD www.onsemi.com 4 200 0.9 1.0 ECH8420 TYPICAL CHARACTERISTICS (continued) 10000 VDD = 15 V VGS = 10 V 7 5 3 td(off) 2 tf 100 7 5 tr 3 0.1 1000 7 5 Coss Crss 2 2 3 5 7 1.0 2 3 2 5 7 10 5 7 100 3 0 ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 5 15 10 1.8 20 25 30 12 14 Qg, Total Gate Charge (nC) VDS, Drain−to−Source (V) Figure 11. VGS − Qg Figure 12. ASO 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 20 10 16 40 60 80 100 120 140 160 TA, Ambient Temperature (C) Figure 13. PD − TA www.onsemi.com 5 18 20 100 7 IDP = 50 A (PW ≤ 10 ms) 5 1 ms 3 2 ID = 14 A 10 ms 10 7 100 ms 5 3 2 1.0 7 5 Operation in this 3 area is limited by RDS(on). 2 DC operation (TA = 25°C) 0.1 7 5 TA = 25°C 3 Single pulse 2 When mounted on ceramic substrate (900 mm2 × 0.8 mm) 0.01 0.1 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 When mounted on ceramic substrate (900 mm2 × 0.8 mm) 1.6 0 8 Figure 10. Ciss, Coss, Crss − VDS 3.0 0 6 Figure 9. SW Time − ID 3.5 0 4 VDS, Drain−to−Source Voltage (V) VDS = 10 V ID = 14 A 4.0 2 ID, Drain Current (A) 4.5 VGS, Gate−to−Source (V) 2 100 10 PD, Allowable Power Dissipation (W) Ciss 3 3 td(on) 2 f = 1 MHz 7 5 Ciss, Coss, Crss (pF) Switching Time, SW Time (ns) 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−28FL / ECH8 CASE 318BF ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON78700E SOT−28FL / ECH8 DATE 31 MAR 2012 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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