ECH8503-TL-H

Ordering number : ENA1680A ECH8503 Bipolar Transistor http://onsemi.com –50V, –5A, Low VCE(sat) PNP Dual ECH8 Features • • • Composite type, facilitating high-density mounting Mounting height 0.9mm Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings -50 V -50 V VEBO IC -6 V -5 A -10 A ICP IB Base Current Collector Dissipation Unit VCBO VCEO Total Dissipation PC PT Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) -1 A 1.3 W 1.6 W 150 °C -55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-008 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Top View ECH8503-TL-H 0.25 2.9 Taping Type : TL Marking 0.15 8 5 MC 2.3 Lot No. TL 4 1 0.65 Electrical Connection 0.3 1 : Emitter1 2 : Base1 3 : Emitter2 4 : Base2 5 : Collector2 6 : Collector2 7 : Collector1 8 : Collector1 0.07 0.9 0.25 2.8 0 to 0.02 Bottom View 8 7 6 5 1 2 3 4 ECH8 Semiconductor Components Industries, LLC, 2013 August, 2013 53012 TKIM/51910EA TKIM TC-00002334 No. A1680-1/7 ECH8503 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Conditions Ratings min typ VCB= -50V, IE=0A VEB= -4V, IC=0A VCE= -2V, IC= -500mA VCE= -10V, IC= -500mA VCE(sat)1 VCB= -10V, f=1MHz IC= -1A, IB= -50mA VCE(sat)2 VBE(sat) V(BR)CBO Unit max 200 -0.1 μA -0.1 μA 560 280 MHz 42 pF -60 -100 mV IC= -2.5A, IB= -125mA -110 -190 mV IC= -2.5A, IB= -125mA -0.9 -1.1 V IC= -10μA, IE=0A -50 V V(BR)CEO V(BR)EBO ton IC= -1mA, RBE=∞ -50 V IE= -10μA, IC=0A -6 tstg tf See specified Test Circuit. V 30 ns 170 ns 17 ns Note) The specifications shown above are for each individual transistor. Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT VOUT IB2 VR 50Ω RB RL + + 100μF 470μF VBE=5V VCC= --12V IC= --20IB1=20IB2= --2.5A Ordering Information Device ECH8503-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1680-2/7 ECH8503 IC -- VCE --1.2 --1.0 Collector Current, IC -- A A --1.4 --4.5 mA --10 A m --8 --1 mA --70 m --1.6 20 A -- 8m --6mA --100 Collector Current, IC -- A --1.8 --4mA A --0.8 mA --15 --0.6 2m A --1 --14m --2mA --0.4 0 --1 0m A IB=0mA 0 --0.1 --0.2 --0.3 --0.4 --4.0 --20mA --3.5 --3.0 --2.5 --10mA --8mA --2.0 --6mA --1.5 --4mA --1.0 --2mA IB=0mA 0 --0.4 --0.8 DC Current Gain, hFE 25°C --25°C Ta=75 °C Collector Current, IC -- A 5 --1 0 --0.2 --0.4 --0.6 --0.8 --1.0 3 25°C 2 --25°C 100 7 5 3 10 --0.01 --1.2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 5 7 IT15450 Cob -- VCB 3 VCE= --10V 5 3 Collector Current, IC -- A IT15449 f T -- IC 7 f=1MHz 2 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz Ta=75°C 2 Base-to-Emitter Voltage, VBE -- V 3 2 100 7 5 100 7 5 3 2 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 10 --1.0 7 IC / IB=20 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 °C 25 7 5 C 5° =7 Ta C 5° --2 3 2 --10 7 --0.01 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V 7 IT15452 VCE(sat) -- IC --1000 3 --100 2 IT15451 VCE(sat) -- IC 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --2.0 IT15448 VCE= --2V 7 --4 --2 --1.6 hFE -- IC 1000 VCE= --2V --3 --1.2 Collector-to-Emitter Voltage, VCE -- V IT15447 IC -- VBE --5 0 --0.5 Collector-to-Emitter Voltage, VCE -- V 0 A --50m A 0 --3 m A --70m --0.5 --0.2 0 IC -- VCE --5.0 mA --3 0m A --50 m A --2.0 IC / IB=50 5 3 2 25 --100 7 °C C 75° Ta= 5 °C --2 5 3 2 --10 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 IT15453 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 IT15454 No. A1680-3/7 ECH8503 VBE(sat) -- IC 3 Collector Current, IC -- A 75°C 5 25°C 3 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 3 5 7 IT15455 PC -- Ta 1.8 C op er at io n (T a= 25 °C 3 2 ) --0.1 7 5 Ta=25°C Single pulse --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 IT15456 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 Collector Dissipation, PC -- W 2 D --1.0 7 5 3 2 2 --0.01 s IC= --5A μs 500 7 1m s 0μ Ta= --25°C 3 2 ICP= --10A 10 --10 7 5 s m 10 ms 0 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V IC / IB=20 2 --1.0 Forward Bias A S O 2 1.4 1.3 1.2 To t al 1.0 Di ss ip nit atio 1u 0.8 n 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15457 No. A1680-4/7 ECH8503 Embossed Taping Specification ECH8503-TL-H No. A1680-5/7 ECH8503 Outline Drawing ECH8503-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1680-6/7 ECH8503 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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