Ordering number : ENA1174A
ECH8601M
N-Channel Power MOSFET
http://onsemi.com
24V, 8A, 23mΩ, Dual ECH8
Features
•
•
•
•
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
•
•
•
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
24
V
±12
V
8
A
PW≤10μs, duty cycle≤1%
60
A
When mounted on ceramic substrate (1000mm2×0.8mm) 1unit
1.5
W
Total Dissipation
PD
PT
1.6
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
When mounted on ceramic substrate (1000mm2×0.8mm)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-003
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ECH8601M-TL-H
Top View
0.25
2.9
Packing Type : TL
Marking
0.15
8
5
TL
Lot No.
2.3
TL
4
1
0.65
Electrical Connection
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
0.07
0.9
0.25
2.8
0 to 0.02
Bottom View
8
7
6
5
1
2
3
4
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
50912 TKIM/72308PE TIIM TC-00001533 No. A1174-1/7
ECH8601M
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Conditions
Ratings
min
typ
Unit
max
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
24
V
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
0.5
VDS=10V, ID=4A
3.1
5.3
RDS(on)1
ID=4A, VGS=4.5V
13.5
17
23
mΩ
RDS(on)2
ID=4A, VGS=4.0V
14
18
24
mΩ
RDS(on)3
ID=4A, VGS=3.1V
14.5
20
30
mΩ
RDS(on)4
ID=2A, VGS=2.5V
16
24
35
mΩ
1
μA
±10
μA
1.3
V
S
Turn-ON Delay Time
td(on)
300
ns
Rise Time
1000
ns
Turn-OFF Delay Time
tr
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See specified Test Circuit.
VDS=10V, VGS=4.5V, ID=8A
IS=8A, VGS=0V
3000
ns
1800
ns
7.5
nC
1.5
nC
2.0
nC
0.8
1.2
V
Switching Time Test Circuit
4V
0V
VDD=10V
VIN
ID=4A
RL=2.5Ω
VIN
VOUT
D
PW=10μs
D.C.≤1%
Rg
G
ECH8601M
P.G
50Ω
S
Rg=1kΩ
Ordering Information
Device
ECH8601M-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1174-2/7
ECH8601M
V
2.
5V
VDS=10V
8
7
6
5
4
VGS=1.5V
3
1
1
0
0
0.2
0.3
0.4
0
0.5
Drain-to-Source Voltage, VDS -- V
ID=2A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
4A
30
25
20
15
10
5
0
2
4
6
8
Ta=
°C
--25
C
75°
3
25°
2
2
3
5
7
C
1.0
2
3
5
Drain Current, ID -- A
7
10
IT13575
5
VDD=10V
VGS=4.5V
td(off)
3
tf
2
1000
tr
7
5
td(on)
3
A
=4.0
V, I D
0
.
4
=
VGS
15
10
--40
--20
2
0
20
40
60
80
100
120
140
160
IT13856
IS -- VSD
VGS=0V
1.0
7
5
3
2
0.1
7
5
3
2
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Diode Forward Voltage, VSD -- V
SW Time -- ID
7
20
0.01
7
5
3
2
0.001
0.1
1.0
IT13576
VGS -- Qg
4.5
Gate-to-Source Voltage, VGS -- V
1.0
0.1
25
10
7
5
3
2
Source Current, IS -- A
7
5
.0A
=2
ID
,
A
4.0
.5V
=2
I D=
,
S
0A
VG
1V
=4.
=3.
, ID
V
S
5
VG
=4.
V GS
30
Ambient Temperature, Ta -- °C
VDS=10V
10
2.5
IT13573
35
IT13574
| yfs | -- ID
2
2.0
40
5
--60
10
Gate-to-Source Voltage, VGS -- V
1.5
RDS(on) -- Ta
45
Ta=25°C
35
1.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
40
0.5
IT13805
Ta=
75°
C
25
°C
--25
°C
0.1
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
4
2
2
Forward Transfer Admittance, | yfs | -- S
5
25°C
3
6
--25°C
7
Ta=7
5°C
Drain Current, ID -- A
Drain Current, ID -- A
8
Switching Time, SW Time -- ns
ID -- VGS
9
3 .1
4.5
V
10.0
V
9
4.0
V
ID -- VDS
10
VDS=10V
ID=8A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
0.1
0
2
3
5
7
1.0
2
Drain Current, ID -- A
3
5
7
10
IT13857
0
1
2
3
4
5
6
Total Gate Charge, Qg -- nC
7
8
IT13858
No. A1174-3/7
ECH8601M
ASO
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
IDP=60A
PW≤10μs
10
0μ
s
ID=8A
Operation in this
area is limited by RDS(on).
1m
s
10
10
DC
PD -- Ta
1.8
Allowable Power Dissipation, PD -- W
Drain Current, ID -- A
2
ms
0m
s
op
era
0.1
7 Ta=25°C
5
Single pulse
3
on ceramic substrate
2 When mounted
(1000mm2✕0.8mm) 1unit
0.01
2 3 5 7 1.0
2 3
0.01 2 3 5 7 0.1
tio
n
When mounted on ceramic substrate
(1000mm2✕0.8mm)
1.6
1.5
1.4
1.2
1.0
To
t
0.8
1u
al
Di
ss
ni
t
ip
ati
on
0.6
0.4
0.2
0
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT13721
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13722
No. A1174-4/7
ECH8601M
Embossed Taping Specification
ECH8601M-TL-H
No. A1174-5/7
ECH8601M
Outline Drawing
ECH8601M-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1174-6/7
ECH8601M
Note on usage : Since the ECH8601M is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1174-7/7