Ordering number : ENA0981B
ECH8654
P-Channel Power MOSFET
http://onsemi.com
–20V, –5A, 38mΩ, Dual ECH8
Features
•
•
Low ON-resistance
Halogen free compliance
•
•
1.8V drive
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
PD
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
PT
Tch
Storage Temperature
Tstg
Unit
--20
V
±10
V
--5
A
--40
A
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
1.3
W
When mounted on ceramic substrate (900mm2×0.8mm)
1.5
W
150
°C
--55 to +150
°C
PW≤10μs, duty cycle≤1%
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-001
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ECH8654-TL-H
Top View
0.25
2.9
Packing Type : TL
Marking
0.15
8
WZ
5
LOT No.
2.3
TL
4
1
0.65
Electrical Connection
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
0.07
0.9
0.25
2.8
0 to 0.02
Bottom View
8
7
6
5
1
2
3
4
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
91212 TKIM/62012 TKIM/N1407PE TIIM TC-00001014 No. A0981-1/7
ECH8654
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Conditions
V(BR)DSS
IDSS
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--3A
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--3A, VGS=--4.5V
ID=--1.5A, VGS=--2.5V
ID=--0.5A, VGS=--1.8V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Ratings
min
typ
Unit
max
--20
V
--0.4
4.9
--1
μA
±10
μA
--1.3
8.3
V
S
29
38
mΩ
41
58
mΩ
64
98
mΩ
960
pF
180
pF
Crss
140
pF
Turn-ON Delay Time
td(on)
14
ns
Rise Time
tr
55
ns
Turn-OFF Delay Time
td(off)
92
ns
Fall Time
tf
68
ns
Total Gate Charge
Qg
11
nC
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--5A
IS=--5A, VGS=0V
2.0
nC
2.8
nC
--0.82
--1.2
V
Switching Time Test Circuit
VDD= --10V
VIN
0V
--4V
ID= --3A
RL=3.33Ω
VOUT
VIN
D
PW=10μs
D.C.≤1%
G
ECH8654
P.G
50Ω
S
Ordering Information
Device
ECH8654-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No. A0981-2/7
ECH8654
ID -- VDS
V
--1.
8V
VGS= --10V
--7
--1.5V
--2
--5
--4
--3
--2
--1
C --25°C
--3
--6
Ta=
75°
C
Drain Current, ID -- A
--2.5V
--4.5V
--8.0V
Drain Current, ID -- A
--4
ID -- VGS
--8
--2.0
--5
0
25°
--1
VGS= --1.2V
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--1.0
0
--1.0
--1.5
--2.0
--2.5
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
140
--0.5
IT13073
IT13074
RDS(on) -- Ta
100
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
100
ID= --0.5A
--1.5A
80
--3.0A
60
40
20
0
0
--1
--2
--3
--4
--5
--6
--7
Gate-to-Source Voltage, VGS -- V
°C
-25
=
°C
Ta
75
2
C
5°
1.0
2
7
5
3
3
5 7 --0.1
2
3
5 7 --1.0
2
3
--40
--20
0
20
40
60
80
100
120
140
160
IT13076
IS -- VSD
VGS=0V
3
2
--1.0
7
5
3
2
--0.1
7
5
0
5 7 --10
IT13077
5
2
td(off)
100
tf
7
5
3
tr
2
--0.6
--0.8
--1.0
--1.2
IT13078
f=1MHz
2
Ciss, Coss, Crss -- pF
3
--0.4
Ciss, Coss, Crss -- VDS
3
VDD= --10V
VGS= --4V
7
--0.2
Diode Forward Voltage, VSD -- V
SW Time -- ID
1000
Switching Time, SW Time -- ns
20
--0.01
2
Drain Current, ID -- A
10
7
--0.01
40
3
2
2
0.1
--0.01
--1.5A
, I D=
--2.5V
=
V GS
--3.0A
V, I D=
.5
4
-V GS=
--10
7
5
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
7
5
--0.5A
Ambient Temperature, Ta -- °C
10
3
60
0
--60
--8
VDS= --10V
2
,I =
--1.8V D
V GS=
IT13075
| yfs | -- ID
3
80
Ta=
75°C
25°C
--25°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
120
Ciss
1000
7
5
3
Coss
Crss
2
td(on)
100
7
2
3
5 7 --0.1
2
3
5 7 --1.0
Drain Current, ID -- A
2
3
5 7 --10
IT13079
0
--2
--4
--6
--8
--10
--12
--14
--16
Drain-to-Source Voltage, VDS -- V
--18
--20
IT13080
No. A0981-3/7
ECH8654
VGS -- Qg
--100
7
5
3
2
VDS= --10V
ID= --5A
--4.0
--3.5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--4.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
1
2
3
4
5
6
7
8
Total Gate Charge, Qg -- nC
10
11
IT13081
PD -- Ta
1.8
Allowable Power Dissipation, PD -- W
9
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
ASO
IDP= --40A
PW≤10μs
10
0
1m μs
s
10
ID= --5A
DC
ms
10
op
0m
s
era
tio
n(
Operation in this
area is limited by RDS(on).
Ta
=
25
°C
)
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2×0.8mm) 1unit
--0.01
--0.01 2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT13082
Mounted on a ceramic board (900mm2×0.8mm)
1.6
1.5
1.4
1.3
1.2
To
t
1.0
al
0.8
Di
ss
1u
nit
0.6
ip
ati
on
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13083
No. A0981-4/7
ECH8654
Embossed Taping Specification
ECH8654-TL-H
No. A0981-5/7
ECH8654
Outline Drawing
ECH8654-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A0981-6/7
ECH8654
Note on usage : Since the ECH8654 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A0981-7/7
Mouser Electronics
Authorized Distributor
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ECH8654-TL-HQ