ECH8655R-R-TL-H
N-Channel Power MOSFET
24 V, 9 A, 16 mW, Dual ECH8
Features
•
•
•
•
•
•
•
Low ON−resistance
2.5 V Drive
Common−drain Type
Protection Diode in
Built−in Gate Protection Resistor
Best Suited for LiB Charging and Discharging Switch
This Device is Pb−Free and are RoHS Compliant
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SOT−28FL / ECH8
CASE 318BF
Product & Package Information
• Package:
• JEITA, JEDEC:
• Minimum Packing Quantity:
ECH8
−
3,000 Pcs./Reel
GENERIC MARKING
DIAGRAM
TA
Lot No.
Unit : mm (typ)
7011A−003
ECH8655R−R−TL−H
0.25
TopView
2.9
8
ELECTRICAL CONNECTION
0.15
5
8
7
6
5
1
2
3
4
2.3
4
1
0.65
0.3
0.9
0.25
2.8
0 to 0.02
1 : Source1
PACKING TYPE: TL
2 : Gate1
3 : Source2
4 : Gate2
0.07
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Bottom View
TL
ECH8
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Figure 1. Package Dimensions
© Semiconductor Components Industries, LLC, 2013
September, 2018 − Rev. 2
1
Publication Order Number:
ECH8655R/D
ECH8655R−R−TL−H
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at TA = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain−to−Source Voltage
VDSS
24
V
Gate−to−Source Voltage
VGSS
±12
V
Drain Current (DC)
ID
9
A
Drain Current (Pulse)
IDP
60
A
PW ≤ 10 ms, duty cycle ≤ 1%
mm2
Allowable Power Dissipation
PD
When mounted on ceramic substrate (900
1 unit
× 0.8 mm)
1.4
W
Total Dissipation
PT
When mounted on ceramic substrate (900 mm2 × 0.8 mm)
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS at TA = 25°C
Ratings
Symbol
Conditions
Min
V(BR)DSS
ID = 1 mA,
VGS = 0 V
24
Zero−Gate Voltage Drain Current
IDSS
VDS = 20 V,
VGS = 0V
1
mA
Gate−to−Source Leakage Current
IGSS
VGS = ±8 V,
VDS = 0 V
±10
mA
VGS(off)
VDS = 10 V,
ID = 1 mA
0.5
1.3
V
| yfs |
VDS = 10 V,
ID = 4.5 A
4.8
8
RDS(on)1
ID = 4.5 A,
VGS = 4.5 V
10
13
16
mW
RDS(on)2
ID = 4.5 A,
VGS = 4.0 V
10.5
13.5
16.5
mW
RDS(on)3
ID = 4.5 A,
VGS = 3.1 V
11
15
20
mW
RDS(on)4
ID = 2 A,
VGS = 2.5 V
13
18
24
mW
td(on)
See specified
Test Circuit.
Parameter
Drain−to−Source Breakdown Voltage
Cutoff Voltage
Forward Transfer Admittance
Static Drain−to−Source On−State
Resistance
Turn−ON Delay Time
Rise Time
Turn−OFF Delay Time
Fall Time
Typ
Max
Unit
V
S
320
ns
tr
1100
ns
td(off)
2400
ns
tf
2100
ns
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2
ECH8655R−R−TL−H
ELECTRICAL CHARACTERISTICS at TA = 25°C
Ratings
Parameter
Symbol
Conditions
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
VDS = 10 V,
VGS = 10 V,
ID = 9 A
Gate−to−Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
Min
Typ
IS = 9 A,
VGS = 0 V
Max
Unit
16.8
nC
1.6
nC
4.8
nC
0.8
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
4.5 V
0V
VDD = 10 V
VIN
ID = 4.5 A
VIN
R L = 2.22 W
VOUT
D
PW = 10 ms
D.C.≤ 1%
Rg
G
P.G
50 W
ECH8655R
S
Rg= 1 kW
Figure 2. Switching Time Test Circuit
ORDERING INFORMATION
Device
Package
Shipping
Memo
ECH8655R−R−TL−H
ECH8
3,000 pcs./reel
Pb Free and Halogen Free
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3
ECH8655R−R−TL−H
TYPICAL CHARACTERISTICS
9
9
3.1 V
2.5 V
4V
7
1.5 V
6
VDS = 10 V
8
ID, Drain Current (A)
ID, Drain Current (A)
8
4.5 V
5
4
3
2
7
6
5
4
3
TA = 75°C
2
1
1
VGS = 1 V
0
0
0.1
0.2
0.3
0.4
25°C
0
0
0.5
0.5
VDS, Drain−to−Source Voltage (V)
1.0
35
RDS(on), Static Drain−to−Source,
On−State Resistance (mW)
RDS(on), Static Drain−to−Source,
On−State Resistance (mW)
35
TA = 25°C
30
25
ID = 2 A
4.5 A
15
10
5
30
VGS = 2.5 V, ID = 2 A
25
VGS = 3.1 V, ID = 4.5 A
20
15
VGS = 4.5 V, ID = 4.5 A
10
VGS = 4 V, ID = 4.5 A
5
0
0
0
2
4
8
6
−50
10
150
Figure 6. RDS(on) − TA
10
7
5
3
2
IS, Source Current (A)
TA = −25°C
75°C
25°C
3
2
2
100
Figure 5. RDS(on) − VGS
7
0.1
50
TA, Ambient Temperature (C)
VDS = 10 V
5
0
VGS, Gate−to−Source Voltage (V)
10
⎮yFS, Forward Transfer
Admittance (s)
2.0
Figure 4. ID − VGS
40
20
1.5
VGS, Gate−to−Source Voltage (V)
Figure 3. ID − VDS
1.0
−25°C
3
5
7
1.0
2
3
5
7
10
VGS = 0 V
1.0
7
5
3
2
TA = 75°C
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0.1
ID, Drain Current (A)
25°C
0.2
0.3
−25°C
0.4
0.5
0.6
0.7
0.8
VSD, Diode Forward Voltage (V)
Figure 7. yfs − ID
Figure 8. IS − VSD
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4
200
0.9
1.0
ECH8655R−R−TL−H
3
tf
2
1000
tr
7
5
td(on)
3
2
100
0.1
ID, Drain Current (A)
10
VDD = 10 V
VGS = 4 V
td(off)
VGS, Gate−to−Source Voltage (V)
5
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
2
3
5
7
1.0
2
3
5
7
VDS = 10 V
ID = 9 V
8
6
4
2
0
10
0
2
4
6
8
10
12
14
ID, Drain Current (V)
Qg, Total Gate Charge (nC)
Figure 9. SW Time − ID
Figure 10. VGS − Qg
16
18
20
1.8
IDP = 60 A
PD, Allowable Power Dissipation (W)
Switching Time, SW Time − ns
7
PW ≤ 10 ms
IDP = 9 A
Operation in this
area is limited by RDS(on)
TA = 25°C
Single pulse
When mounted on ceramic substrate
(900mm2 x 0.8 mm) 1 unit
0.1
7
5
3
2
0.01
0.01 2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
When mounted on ceramic substrate
(900mm2 x 0.8 mm)
1.6
1.5
1.4
1.2
Total Dissinpation
1.0
1 unit
0.8
0.6
0.4
0.2
0
0
5
20
40
60
80
100
120
VDS, Drain−to−Source Voltage (V)
TA, Ambinet Temperature (C)
Figure 11. ASO
Figure 12. PD − TA
140
160
Since the ECH8655R−R−TL−H is a MOSFET product, please avoid using this device in the vicinity of highly charged
objects.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−28FL / ECH8
CASE 318BF
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON78700E
SOT−28FL / ECH8
DATE 31 MAR 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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