ECH8657-TL-H

Ordering number : ENA1710B ECH8657 N-Channel Power MOSFET http://onsemi.com 35V, 4.5A, 59mΩ, Dual ECH8 Features • • • 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 35 V ±20 V 4.5 A PW≤10μs, duty cycle≤1% 30 A When mounted on ceramic substrate (1200mm2×0.8mm) 1unit 1.3 W Total Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (1200mm2×0.8mm) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8657-TL-H Top View 0.25 2.9 Packing Type : TL Marking 0.15 8 TC 5 Lot No. 2.3 TL 4 1 0.65 Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 0.9 0.25 2.8 0 to 0.02 Bottom View 8 7 6 5 1 2 3 4 ECH8 Semiconductor Components Industries, LLC, 2013 July, 2013 61312 TKIM/D2210 TKIM/42810PE TKIM TC-00002338 No. A1710-1/7 ECH8657 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance typ Unit max ID=1mA, VGS=0V VDS=35V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A 1.66 RDS(on)1 ID=2A, VGS=10V 45 59 mΩ RDS(on)2 ID=1A, VGS=4.5V 85 119 mΩ RDS(on)3 ID=1A, VGS=4V 110 155 mΩ Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Turn-OFF Delay Time Ratings min V(BR)DSS IDSS Input Capacitance Rise Time Conditions 35 V 1.2 1 μA ±10 μA 2.6 V S 230 pF 37 pF Crss 25 pF td(on) tr 6 ns 11 ns 17 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=20V, VGS=10V, ID=4.5A 9 ns 4.6 nC 1.0 nC 1.0 IS=4.5A, VGS=0V 0.85 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=20V VIN ID=2A RL=10Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8657 P.G 50Ω S Ordering Information Device ECH8657-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1710-2/7 ECH8657 ID -- VDS V 4.0 1.0 1 VGS=3.0V 0.5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 2A 160 120 80 40 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 5 IT14211 A I =1 4.0V, D = VGS 1A , I D= 4.5V = VGS 120 80 =2A V, I D 10.0 V GS= 40 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14213 IS -- VSD 7 5 VGS=0V 3 3 2 C 5° --2 °C 75 5 °C 25 3 3 2 0.1 7 5 2 3 0.1 0.01 0.01 0.2 C = Ta --25° 7 25°C 1.0 1.0 7 5 5°C 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 160 0 --60 16 VDS=10V 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 7 5 Switching Time, SW Time -- ns 2 RDS(on) -- Ta IT16223 | yfs | -- ID 5 4 Gate-to-Source Voltage, VGS -- V Ta= 7 0 5 7 SW Time -- ID 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V IT14215 Ciss, Coss, Crss -- VDS 5 VDD=15V VGS=10V f=1MHz 3 3 td(off) 2 10 tf 7 5 td(on) tr 3 Ciss 2 100 7 5 Coss Crss 3 2 2 1.0 0.1 0.4 IT14214 Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=1A 1 200 Ta=25°C 200 0 IT14210 RDS(on) -- VGS 240 2 --25° C 1.5 3 C 3.5V 25° C 2.0 4 Ta= 75° 2.5 0 VDS=10V 5 3.0 0 ID -- VGS 6 Drain Current, ID -- A Drain Current, ID -- A 3.5 4.5 V 15.0V 10.0V 6.0V 4.0 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 10 IT14216 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14217 No. A1710-3/7 ECH8657 VGS -- Qg 10 9 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 7 5 3 2 VDS=10V ID=4.5A 7 6 5 4 3 2 1 0 0 1 2 3 4 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.8 5 IT14218 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=30A (PW≤10μs) 10 0μ 1m s s 10 ms 10 0m s ID=4.5A DC op era tio n( Operation in this Ta area is limited by RDS(on). =2 5°C ) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 1unit 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 IT15504 When mounted on ceramic substrate (1200mm2×0.8mm) 1.6 1.5 1.4 1.3 1.2 To t 1.0 al 0.8 Di ss 1u nit 0.6 ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15505 No. A1710-4/7 ECH8657 Embossed Taping Specification ECH8657-TL-H No. A1710-5/7 ECH8657 Outline Drawing ECH8657-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1710-6/7 ECH8657 Note on usage : Since the ECH8657 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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