Ordering number : ENA1358B
ECH8660
Power MOSFET
http://onsemi.com
30V, 4.5A, 59mΩ, –30V, –4.5A, 59mΩ, Complementary Dual ECH8
Features
•
•
•
The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
4V drive
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
N-channel
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
PD
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
PT
Tch
Storage Temperature
Tstg
PW≤10μs, duty cycle≤1%
P-channel
Unit
30
--30
V
±20
±20
V
4.5
--4.5
A
30
--30
A
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
1.3
W
When mounted on ceramic substrate (1200mm2×0.8mm)
1.5
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-001
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ECH8660-TL-H
Top View
Packing Type : TL
Marking
0.25
2.9
0.15
8
TF
5
Lot No.
2.3
TL
Electrical Connection
4
1
0.65
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
0.07
0.9
0.25
2.8
0 to 0.02
Bottom View
8
7
6
5
1
2
3
4
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
42512 TKIM/D2210 TKIM/N1908PE MSIM TC-00001695 No. A1358-1/8
ECH8660
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
RDS(on)1
ID=2A, VGS=10V
45
59
mΩ
RDS(on)2
ID=1A, VGS=4.5V
85
119
mΩ
RDS(on)3
ID=1A, VGS=4V
110
155
mΩ
Input Capacitance
Ciss
240
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
45
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
30
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
6.2
ns
Rise Time
tr
See specified Test Circuit.
11
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
17
ns
Fall Time
tf
Qg
See specified Test Circuit.
7.5
ns
VDS=10V, VGS=10V, ID=4.5A
4.4
nC
VDS=10V, VGS=10V, ID=4.5A
VDS=10V, VGS=10V, ID=4.5A
IS=4.5A, VGS=0V
1.1
nC
0.64
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Total Gate Charge
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
30
V
1.2
VDS=10V, ID=2A
1
μA
±10
μA
2.6
1
1.66
V
S
nC
0.84
1.2
V
--1
μA
±10
μA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VGS(off)
| yfs |
VDS=--10V, ID=--1mA
RDS(on)1
--30
V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
--1.2
VDS=--10V, ID=--2A
--2.3
2.5
4.2
V
S
ID=--2A, VGS=--10V
ID=--1A, VGS=--4.5V
45
59
mΩ
RDS(on)2
71
100
mΩ
RDS(on)3
ID=--1A, VGS=--4V
82
115
mΩ
Input Capacitance
Ciss
VDS=--10V, f=1MHz
430
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
105
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
75
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
7.5
ns
Rise Time
tr
See specified Test Circuit.
26
ns
Turn-OFF Delay Time
td(off)
tf
See specified Test Circuit.
45
ns
Fall Time
See specified Test Circuit.
35
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--4.5A
10
nC
VDS=--10V, VGS=--10V, ID=--4.5A
VDS=--10V, VGS=--10V, ID=--4.5A
IS=--4.5A, VGS=0V
2.0
nC
Static Drain-to-Source On-State Resistance
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
2.5
nC
--0.85
--1.2
V
Switching Time Test Circuit
[N-channel]
10V
0V
[P-channel]
VDD=15V
VIN
0V
--10V
ID=2A
RL=7.5Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
D
PW=10μs
D.C.≤1%
VOUT
G
ECH8660
50Ω
ID= --2A
RL=7.5Ω
VIN
G
P.G
VDD= --15V
VIN
S
P.G
ECH8660
50Ω
S
No. A1358-2/8
ECH8660
Ordering Information
Device
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb-Free and Halogen Free
ECH8660-TL-H
ID -- VDS
[Nch]
V
4.0
1.0
1
VGS=3.0V
0.5
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
0
1.0
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
2A
160
120
80
40
0
2
4
6
8
10
12
14
Gate-to-Source Voltage, VGS -- V
C
RDS(on) -- Ta
[Nch]
A
I =1
4.0V, D
=
VGS
1A
, I D=
4.5V
=
VGS
80
=2A
V, I D
10.0
V GS=
40
--40 --20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
[Nch]
140
160
IT14213
IS -- VSD
7
5
VDS=10V
[Nch]
VGS=0V
3
3
2
5
°C
25
3
2
3
2
0.1
7
5
C
C
5°
--2
°C
=
75
Ta
7
--25°
1.0
1.0
7
5
25°C
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
5
IT14211
120
0
--60
16
3
160
IT16223
| yfs | -- ID
5
2
5°C
0
4
Gate-to-Source Voltage, VGS -- V
Ta=
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID=1A
1
200
Ta=25°C
200
0
IT14210
RDS(on) -- VGS
240
2
--25°
1.5
3
5°C
3.5V
25°
C
2.0
4
Ta=
7
4.5
2.5
0
[Nch]
VDS=10V
5
3.0
0
ID -- VGS
6
Drain Current, ID -- A
Drain Current, ID -- A
3.5
V
15.0V
10.0V
6.0V
4.0
3
2
0.1
0.01
2
3
5 7 0.1
2
3
5 7 1.0
Drain Current, ID -- A
2
3
5 7
IT14214
0.01
0.2
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
1.2
IT14215
No. A1358-3/8
ECH8660
SW Time -- ID
7
5
3
td(off)
2
10
tf
7
5
td(on)
tr
3
5
7
2
1.0
3
5
7
Coss
Crss
3
10
10
[Nch]
6
5
4
3
2
1
2
3
4
--1.0
VGS= --2.5V
--0.5
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
180
--0.9
--2A
100
80
60
40
20
--4
n(
Ta
=
25
°C
)
2
3
5
7 1.0
2
3
5
7 10
2
3
5
IT14195
ID -- VGS
[Pch]
VDS= --10V
--6
--8
--10
--12
Gate-to-Source Voltage, VGS -- V
--4
--2
--14
--16
IT16224
C
--3
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
Gate-to-Source Voltage, VGS -- V
[Pch]
120
--2
tio
Ta=25°C
Single pulse
When mounted on ceramic substrate
(1200mm2×0.8mm)
IT14186
140
0
era
Operation in this
area is limited by RDS(on).
0.1
7
5
3
2
0
--1.0
RDS(on) -- Ta
160
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID= --1A
op
--1
Ta=25°C
160
10
0μ
1m s
s
10
ms
10
0m
s
--25°
Drain Current, ID -- A
--1.5
--0.1
PW≤10μs
DC
--6
.5V
--4.
5
--3.0V
--2.0
0
[Nch]
ID=4.5A
1.0
7
5
3
2
30
IT14217
--5
--6.
0
--2.5
25
Drain-to-Source Voltage, VDS -- V
[Pch]
V
--3.0
20
--3
V --4.0
V
--10.0V
--3.5
10
7
5
3
2
IT14218
ID -- VDS
--4.0
15
IDP=30A
0.01
0.1
5
Total Gate Charge, Qg -- nC
10
ASO
7
5
3
2
Drain Current, ID -- A
7
1
5
Drain-to-Source Voltage, VDS -- V
8
0
0
IT14216
VDS=10V
ID=4.5A
9
Gate-to-Source Voltage, VGS -- V
5
25°
C
3
VGS -- Qg
10
Drain Current, ID -- A
7
5°C
2
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
100
Ta=
7
1.0
0.1
0
Ciss
2
2
2
0
[Nch]
f=1MHz
3
0
Ciss, Coss, Crss -- VDS
5
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
[Nch]
VDD=15V
VGS=10V
--4.0
IT14187
[Pch]
140
120
A
= --1
, ID
V
0
.
= --4
VGS
--1A
I =
.5V, D
4
=
VGS
--2A
V, I D=
--10.0
=
V GS
100
80
60
40
20
0
--60
--40 --20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT14189
No. A1358-4/8
ECH8660
1.0
7
5
=
Ta
5°C
--2
3
2
°
25
°C
75
C
0.1
7
5
3
2
5 7--0.01 2 3
5 7--0.1 2 3
5 7--1.0
2 3
Drain Current, ID -- A
Switching Time, SW Time -- ns
7
SW Time -- ID
[Pch]
--0.1
7
5
--0.4
--0.6
--0.8
--1.0
--1.2
IT14191
Ciss, Coss, Crss -- VDS
[Pch]
f=1MHz
7
5
tf
3
2
tr
10
td(on)
7
Ciss
3
2
Coss
100
Crss
7
5
5
2
3
5
7
2
--1.0
3
5
Drain Current, ID -- A
7
3
--10
[Pch]
7
5
3
2
Drain Current, ID -- A
--8
--7
--6
--5
--4
--3
--2
--1
0
1
2
3
4
5
6
7
8
Total Gate Charge, Qg -- nC
PD -- Ta
1.8
--5
9
10
11
IT14194
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
VDS= --10V
ID= --4.5A
--9
0
IT14192
VGS -- Qg
--10
Gate-to-Source Voltage, VGS -- V
3
2
1000
td(off)
3
--0.1
Allowable Power Dissipation, PD -- W
--1.0
7
5
Diode Forward Voltage, VSD -- V
VDD= --15V
VGS= --10V
5
0
3
2
--0.01
--0.2
5 7--10
IT14190
Ciss, Coss, Crss -- pF
100
VGS=0V
3
2
0.01
7
--0.001 2 3
[Pch]
--25°C
VDS= --10V
3
2
IS -- VSD
--10
7
5
25°C
[Pch]
Ta=7
5°C
10
7
5
| yfs | -- ID
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--30
IT14193
ASO
[Pch]
IDP= --30A
PW≤10μs
10
0μ
1m s
s
ID= --4.5A
10
ms
DC
op
10
0m
s
era
Operation in this
area is limited by RDS(on).
tio
n(
Ta
=
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate
(1200mm2×0.8mm)
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
Drain-to-Source Voltage, VDS -- V
2
3
5
IT14196
[Nch/Pch]
When mounted on ceramic substrate
(1200mm2×0.8mm)
1.6
1.5
1.4
1.3
1.2
To
t
1.0
al
0.8
Di
ss
1u
nit
0.6
ip
ati
on
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14197
No. A1358-5/8
ECH8660
Embossed Taping Specification
ECH8660-TL-H
No. A1358-6/8
ECH8660
Outline Drawing
ECH8660-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1358-7/8
ECH8660
Note on usage : Since the ECH8660 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
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PS No. A1358-8/8
