Ordering number : ENA1777A
ECH8661
Power MOSFET
http://onsemi.com
30V, 7A, 24mΩ, –30V, –5.5A, 39mΩ, Complementary Dual ECH8
Features
•
•
•
•
•
ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.)
The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
4V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
N-channel
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
PW≤10μs, duty cycle≤1%
P-channel
Unit
30
--30
V
±20
±20
V
7
--5.5
A
40
--40
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
1.3
A
W
Total Dissipation
PD
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
When mounted on ceramic substrate (900mm2×0.8mm)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-001
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ECH8661-TL-H
Top View
0.25
2.9
Packing Type : TL
Marking
0.15
8
5
TG
2.3
LOT No.
TL
4
1
0.65
Electrical Connection
0.3
8
7
6
5
1
2
3
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
0.07
0.9
0.25
2.8
0 to 0.02
Bottom View
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
51612 TKIM/72110PE TKIM TC-00002431 No. A1777-1/9
ECH8661
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3.5A
3.7
RDS(on)1
ID=3.5A, VGS=10V
18
24
mΩ
RDS(on)2
ID=2A, VGS=4.5V
29
41
mΩ
RDS(on)3
ID=2A, VGS=4V
39
55
mΩ
Input Capacitance
Ciss
710
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
120
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
72
pF
Turn-ON Delay Time
td(on)
10
ns
Rise Time
tr
25
ns
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=7A, VGS=0V
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
30
V
1.2
See specified Test Circuit.
VDS=15V, VGS=10V, ID=7A
1
μA
±10
μA
2.6
V
S
43
ns
25
ns
11.8
nC
2.4
nC
2.0
0.79
nC
1.2
V
--1
μA
±10
μA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2.5A
5.2
RDS(on)1
ID=--2.5A, VGS=--10V
30
39
mΩ
RDS(on)2
ID=--1.5A, VGS=--4.5V
55
77
mΩ
RDS(on)3
ID=--1.5A, VGS=--4V
58
82
mΩ
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Turn-OFF Delay Time
V
VGS(off)
| yfs |
Input Capacitance
Rise Time
--30
VDS=--30V, VGS=0V
--1.2
--2.6
V
S
600
pF
145
pF
Crss
110
pF
td(on)
tr
7.2
ns
23
ns
63
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--5.5A
IS=--5.5A, VGS=0V
42
ns
13
nC
1.8
nC
3.2
nC
--0.82
--1.2
V
No. A1777-2/9
ECH8661
Switching Time Test Circuit
[N-channel]
[P-channel]
VDD=15V
VIN
10V
0V
0V
--10V
ID=3.5A
RL=4.3Ω
VIN
D
PW=10μs
D.C.≤1%
VDD= --15V
VIN
VOUT
D
PW=10μs
D.C.≤1%
G
VOUT
G
ECH8661
P.G
ID= --2.5A
RL=6Ω
VIN
50Ω
ECH8661
P.G
S
50Ω
S
Ordering Information
Device
ECH8661-TL-H
6.0V
4.5V
4.0V
[Nch]
ID -- VGS
14
V
[Nch]
VDS=10V
13
3.5
12
11
3
2
VGS=3.0V
10
9
8
7
6
5
4
2
0
1
0
0
0.2
0.4
0.6
0.8
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
80
1.0
Ta=
7
3
1
25°C --25
°C
4
Pb Free and Halogen Free
5°C
5
memo
3,000pcs./reel
Drain Current, ID -- A
Drain Current, ID -- A
6
Shipping
ECH8
ID -- VDS
16.0V 10.0V 8.0V
7
Package
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Gate-to-Source Voltage, VGS -- V
IT13723
[Nch]
RDS(on) -- Ta
70
4.5
5.0
IT13724
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
70
ID=2A
60
3.5A
50
40
30
20
10
0
0
2
4
6
8
10
12
Gate-to-Source Voltage, VGS -- V
14
16
IT13725
60
50
A
I =2.0
4.0V, D
=
S
VG
2.0A
, I D=
V
5
.
4
=
VGS
.5A
, I D=3
10.0V
=
V GS
40
30
20
10
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT13726
No. A1777-3/9
ECH8661
°C
-25
=
°C
Ta
75
2
1.0
°C
25
7
5
3
2
0.1
7
0.01
VGS=0V
10
7
5
3
2
1.0
7
5
3
2
°C
3
[Nch]
--25
5
25°
C
VDS=10V
7
IS -- VSD
3
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
[Nch]
Ta
=7
5°C
| yfs | -- ID
10
0.1
7
5
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
SW Time -- ID
100
0.01
0.3
5 7 10
2
IT13727
0.4
0.5
0.6
0.7
0.8
0.9
Diode Forward Voltage, VSD -- V
[Nch]
Ciss, Coss, Crss -- VDS
2
3
1000
Ciss, Coss, Crss -- pF
tf
2
tr
td(on)
10
7
5
2
3
5
7 1.0
2
3
5
7
10
Drain Current, ID -- A
Coss
100
3
3
Crss
[Nch]
7
6
5
4
3
2
1
2
3
4
5
6
7
8
9
10
Total Gate Charge, Qg -- nC
10
7
5
3
2
15
s
μs
10
ms
10
0
m
op
s
era
tio
n(
Ta=
25°
Operation in this
C)
area is limited by RDS(on).
DC
1.0
7
5
3
2
0.1
7
5
3
2
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
ID -- VGS
--9
2 3
5
IT15731
[Pch]
V
.0
--6.0
--7
--6
--5
--4
--3
--2
--1
--0.3
100
1m
--0.5
--0.2
[Nch]
--8
VGS= --2.5V
--0.1
30
IT13730
VDS= --10V
--1.0
0
25
Drain-to-Source Voltage, VDS -- V
[Pch]
--1.5
0
20
ID=7A
0.01
0.01
12
--3
--4.0V
V -4.5
V --3.
5V
--10.0V
--18.0V
10
IDP=40A (PW≤10μs)
IT15732
ID -- VDS
--2.0
11
Drain Current, ID -- A
1
5
ASO
100
7
5
3
2
8
0
0
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
2
VDS=15V
ID=7A
9
Drain Current, ID -- A
2
IT13729
VGS -- Qg
10
--2.5
3
5
VDD=15V
VGS=10V
2
0.1
--3.0
5
7
3
0
Ciss
7
Ta=
75°
C
--25
°C
25°
C
Switching Time, SW Time -- ns
td(off)
[Nch]
f=1MHz
7
5
1.0
IT13728
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--1.0
IT14855
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
Gate-to-Source Voltage, VGS -- V
--3.5
--4.0
IT14856
No. A1777-4/9
ECH8661
RDS(on) -- VGS
[Pch]
100
80
60
40
20
--4
--6
--8
--10
--12
--14
5
3
7
25
°C
5
3
2
0.1
7
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
--20
5 7
0
20
40
60
80
100
120
IS -- VSD
5
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.4
--0.6
--0.8
--1.0
IT14860
Ciss, Coss, Crss -- VDS
2
1000
Ciss, Coss, Crss -- pF
2
tr
10
td(on)
7
Ciss
5
3
2
Coss
Crss
100
5
VDD= --15V
VGS= --10V
2
3
5
7 --1.0
2
3
5
7
5
7 --10
2
IT14861
Drain Current, ID -- A
VGS -- Qg
--10
[Pch]
--100
7
5
3
2
Drain Current, ID -- A
--8
--7
--6
--5
--4
--3
--2
--1
0
0
1
2
3
4
5
6
7
8
9
10
Total Gate Charge, Qg -- nC
11
12
13
IT15733
0
--10
--5
--15
--25
--20
Drain-to-Source Voltage, VDS -- V
VDS= --10V
ID= --5.5A
--9
[Pch]
f=1MHz
3
3
--0.1
--1.2
Diode Forward Voltage, VSD -- V
tf
7
160
[Pch]
VGS=0V
--10
7
5
3
2
--0.01
7
5
3
2
--0.001
--0.2
[Pch]
140
IT15728
td(off)
7
Switching Time, SW Time -- ns
--40
IT14859
SW Time -- ID
100
20
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
[Pch]
7
1.0
30
Ambient Temperature, Ta -- °C
10
°C
-25
=a
T
°C
75
40
10
--60
--16
VDS= --10V
2
50
IT15727
| yfs | -- ID
2
60
5°C
--2
0
A
1.5
= -I
D
V,
4.0
= -1.5A
S
= -VG
I
, D
4.5V
= -A
S
VG
--2.5
, I D=
V
0
.
0
= --1
VGS
70
C
120
80
--25
°
--2.5A
Ta=
7
140
90
25°C
ID= --1.5A
160
Gate-to-Source Voltage, VGS -- V
Gate-to-Source Voltage, VGS -- V
[Pch]
Ta=25°C
180
0
RDS(on) -- Ta
100
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
200
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--30
IT14862
ASO
[Pch]
IDP= --40A (PW≤10μs)
10
1m
s
ID= --5.5A
0μ
s
10m
DC
s
100
ms
ope
rat
ion
Operation in this
area is limited by RDS(on).
(Ta
=2
5°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
Drain-to-Source Voltage, VDS -- V
3
5
IT15729
No. A1777-5/9
ECH8661
PD -- Ta
Allowable Power Dissipation, PD -- W
1.8
[Nch/Pch]
1.6
1.5
1.4
1.3
1.2
To
t
1.0
al
0.8
Di
ss
1u
nit
0.6
ip
ati
on
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT15730
No. A1777-6/9
ECH8661
Embossed Taping Specification
ECH8661-TL-H
No. A1777-7/9
ECH8661
Outline Drawing
ECH8661-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1777-8/9
ECH8661
Note on usage : Since the ECH8661 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No. A1777-9/9
