ECH8662-TL-H

Ordering number : ENA1259A ECH8662 N-Channel Power MOSFET http://onsemi.com 40V, 6.5A, 30mΩ, Dual ECH8 Features • • • • Low ON-resistance 2.5V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 40 V ±10 V 6.5 A PW≤10μs, duty cycle≤1% 40 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W Total Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8662-TL-H Top View 0.25 2.9 Packing Type : TL 8 TH 5 2.3 2.8 0 to 0.02 Lot No. TL 4 1 0.65 Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 0.9 0.25 Marking 0.15 Bottom View 8 7 6 5 1 2 3 4 ECH8 Semiconductor Components Industries, LLC, 2013 July, 2013 53012 TKIM/70908PE TIIM TC-00001419 No. A1259-1/7 ECH8662 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=40V, VGS=0V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 VDS=10V, ID=3.5A 3.9 RDS(on)1 ID=3.5A, VGS=4.5V 23 30 mΩ RDS(on)2 ID=3.5A, VGS=4V 25 33 mΩ RDS(on)3 ID=1.5A, VGS=2.5V 30 42 mΩ Input Capacitance Ciss 1130 pF Output Capacitance Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 77 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 60 pF Turn-ON Delay Time td(on) 14 ns Rise Time tr 34 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance 40 See specified Test Circuit. VDS=20V, VGS=4.5V, ID=6.5A IS=6.5A, VGS=0V V 1 μA ±10 μA 1.3 6.5 V S 93 ns 55 ns 12 nC 2.2 nC 3.4 nC 0.85 1.2 V Switching Time Test Circuit 4.5V 0V VDD=20V VIN ID=3.5A RL=5.7Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8662 P.G 50Ω S Ordering Information Device ECH8662-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1259-2/7 ECH8662 ID -- VDS 4.0 3.5 1.5V 3.0 2.5 2.0 1.5 6 5 4 3 2 1.0 1 VGS=1.2V 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ID=1.5A 3.5A 36 27 18 9 0 0 1 2 3 4 5 6 7 .5A =1 I D 3.5A , .5V , I D= =2 .5A S .0V G =3 V =4 I , D S VG .5V =4 S VG 36 27 18 9 --40 --20 0 20 40 60 80 100 120 1.0 7 5 = Ta °C 25 -- °C 75 °C 3 2 25 0.1 7 5 3 2 140 160 IT13828 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0 5 7 10 IT13829 0.4 0.6 0.8 1.0 1.2 IT13830 Ciss, Coss, Crss -- VDS 3 VDD=20V VGS=4.5V 2 0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 3 f=1MHz 2 Ciss 1000 td(off) 100 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 45 2 3 2 2.5 IT13826 Ambient Temperature, Ta -- °C VDS=10V 0.01 0.001 2 3 2.0 54 IT13827 | yfs | -- ID 1.5 RDS(on) -- Ta 0 --60 8 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Gate-to-Source Voltage, VGS -- V 1.0 63 54 45 0.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 63 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.0 IT13825 Ta=7 5°C 25°C --25° C 0 10 7 5 25°C -25°C 4.5 7 Ta=7 5°C Drain Current, ID -- A 5.0 VDS=10V 8 Drain Current, ID -- A 5.5 ID -- VGS 9 1.8 V 6.0 2.5V 2.0V 8.0V 4.5V 4.0V 6.5 7 tf 5 3 tr 2 td(on) 5 3 2 100 Coss 7 Crss 5 10 7 0.1 7 3 2 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT13831 0 5 10 15 20 25 30 35 Drain-to-Source Voltage, VDS -- V 40 IT13832 No. A1259-3/7 ECH8662 VGS -- Qg 5.0 VDS=20V ID=6.5A 4.5 4.0 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC 11 12 IT13833 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 10 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO PW≤10μs IDP=40A 10 0μ s 1m s ID=6.5A 10m s DC 10 0m op s tio n( Operation in this Ta= area is limited by RDS(on). 25 °C ) era Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 IT13834 When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.5 1.4 1.3 1.2 To t al 1.0 0.8 Di ss 1u nit ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13835 No. A1259-4/7 ECH8662 Embossed Taping Specification ECH8662-TL-H No. A1259-5/7 ECH8662 Outline Drawing ECH8662-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1259-6/7 ECH8662 Note on usage : Since the ECH8662 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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