ECH8674-TL-H

Ordering number : ENA1436A ECH8674 P-Channel Power MOSFET http://onsemi.com –12V, –5A, 41mΩ, Dual ECH8 Features • • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) 1unit Unit --12 V ±10 V --5 A --30 A 1.3 W Total Power Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (1200mm2×0.8mm) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8674-TL-H Top View Packing Type : TL 0.25 2.9 8 5 TV LOT No. TL 2.3 2.8 0 to 0.02 4 1 0.65 Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 0.9 0.25 Marking 0.15 Bottom View 8 7 6 5 1 2 3 4 ECH8 Semiconductor Components Industries, LLC, 2013 July, 2013 60612 TKIM/40809PE MSIM TC-00001911 No. A1436-1/7 ECH8674 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS1 Conditions IDSS2 ID=--1mA, VGS=0V VDS=--8V, VGS=0V VDS=--12V, VGS=0V Cutoff Voltage IGSS VGS(off) VGS=±8V, VDS=0V VDS=--6V, ID=--1mA Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 VDS=--6V, ID=--3A ID=--3A, VGS=--4.5V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings min typ Unit max --12 V --0.4 4.8 ID=--1.5A, VGS=--2.5V ID=--0.5A, VGS=--1.8V --1 μA --10 μA ±10 μA --1.3 8.1 V S 31 41 mΩ 45 63 mΩ 66 95 mΩ 660 pF 210 pF Crss 155 pF Turn-ON Delay Time td(on) 7.4 ns Rise Time tr 57 ns Turn-OFF Delay Time td(off) 72 ns Fall Time tf 69 ns Total Gate Charge Qg 6.9 nC Gate-to-Source Charge Qgs 1.2 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--6V, f=1MHz See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=--5A 1.8 IS=--5A, VGS=0V --0.83 nC --1.2 V Switching Time Test Circuit 0V --4.5V VDD= --6V VIN ID= --3A RL=2Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8674 P.G 50Ω S Ordering Information Device ECH8674-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1436-2/7 ECH8674 ID -- VDS --5 --2 --1 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 0 --1.0 120 100 ID= --0.5A --1.5A 60 --3.0A 40 20 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V = Ta 2 5°C --2 75 °C °C 25 1.0 7 5 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 IT12991 25°C --1.5A , I D= V .5 2 -V GS= .0A I = --3 --4.5V, D V GS= 60 40 20 --20 0 20 40 60 80 100 120 140 160 IT14503 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.001 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT12992 Ciss, Coss, Crss -- VDS 3 VDD= --6V VGS= --4.5V 7 5 0 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 f=1MHz 2 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns = --1. VGS --0.01 7 5 3 2 3 0.1 --0.01 5A = --0. 8V, I D 80 --10 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 --2.5 IT12988 Ambient Temperature, Ta -- °C 10 7 5 --2.0 100 0 --60 --40 --8 VDS= --6V 2 --1.5 RDS(on) -- Ta IT14502 | yfs | -- ID 3 --1.0 120 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 --1 --0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 0 0 IT12987 RDS(on) -- VGS 160 0 --2 --1 VGS= --1.0V Drain-to-Source Voltage, VDS -- V 80 --3 Ta= 75° C 25°C --25° C 0 --4 --25°C Drain Current, ID -- A --1.5V Ta=7 5°C V --1 --2.5 VDS= --6V --3.0 V --4.5V --3 --8.0V Drain Current, ID -- A --4 ID -- VGS --6 .8 V --5 td(off) 100 7 5 tf 3 2 tr 10 td(on) 7 Ciss 7 5 3 Coss Crss 2 100 5 3 --0.01 1000 7 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT12993 5 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT12994 No. A1436-3/7 ECH8674 VGS -- Qg 7 5 3 2 VDS= --6V ID= --5A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 Total Gate Charge, Qg -- nC PD -- Ta 7 IT12995 IDP= --30A ID= --5A --1.0 7 5 3 2 --0.1 7 5 3 2 PW≤10μs 100 μs 10 ms 1m s DC 10 0m op era s tio n( Ta =2 5° C) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT14504 When mounted on ceramic substrate (1200mm2×0.8mm) 1.5 1.4 1.3 1.2 1.0 al t To di 0.8 n t io ni 0.6 at ip 1u ss Allowable Power Dissipation, PD -- W 1.6 6 --10 7 5 3 2 ASO 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14505 No. A1436-4/7 ECH8674 Embossed Taping Specification ECH8674-TL-H No. A1436-5/7 ECH8674 Outline Drawing ECH8674-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1436-6/7 ECH8674 Note on usage : Since the ECH8674 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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