ECH8693R-TL-W

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. ECH8693R Power MOSFET for 1-2 Cells Lithium-ion Battery Protection 24 V, 7 mΩ, 14 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells Lithium-ion Battery applications. VDSS Features  Low On-Resistance  2.5 V drive  Common-Drain Type  ESD Diode-Protected Gate  Built-in Gate Protection Resistor  Pb-Free, Halogen Free and RoHS compliance RDS(on) Max 7 mΩ @ 4.5 V 7.5 mΩ @ 4.0 V 24 V 9.1 mΩ @ 3.1 V ELECTRICAL CONNECTION N-Channel 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Symbol Value Unit Drain to Source Voltage VDSS 24 V Gate to Source Voltage VGSS 12.5 V Drain Current (DC) ID 14 A Drain Current (Pulse) PW  10 s, duty cycle  1% IDP 60 A Power Dissipation Surface mounted on ceramic substrate 2 (900 mm  0.8 mm) 1 unit Total Dissipation Surface mounted on ceramic substrate 2 (900 mm  0.8 mm) 1.4 W PT 1.5 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter © Semiconductor Components Industries, LLC, 2016 December 2016 - Rev. 3 1 2 3 4 MARKING PD Junction to Ambient Surface mounted on ceramic substrate 2 (900 mm  0.8 mm) 1 unit 14 A 10.5 mΩ @ 2.5 V Typical Applications  1-2 cells Lithium-ion Battery Charging and Discharging Switch Parameter ID Max Symbol Value RJA 89.2 1 UQ LOT No. SOT-28FL / ECH8 ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Unit C/W Publication Order Number : ECH8693R/D ECH8693R ELECTRICAL CHARACTERISTICS at Ta  25C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance RDS(on) Value Conditions min typ ID = 1 mA, VGS = 0 V VDS = 20 V, VGS = 0 V VGS = 8 V, VDS = 0 V 24 VDS = 10 V, ID = 1 mA 0.5 Unit max V 1 A 1 A 1.3 VDS = 10 V, ID = 5 A 8 V S ID = 5 A, VGS = 4.5 V ID = 5 A, VGS = 4.0 V 4.4 5.6 7 m 4.6 5.8 7.5 m ID = 5 A, VGS = 3.1 V 5.2 6.5 9.1 m 6 7.5 10.5 m ID = 2.5 A, VGS = 2.5 V Turn-ON Delay Time td(on) 545 ns Rise Time tr 525 ns Turn-OFF Delay Time td(off) 18.65 s Fall Time tf 22.2 s Turn-ON Delay Time td(on) 545 ns Rise Time tr 525 ns Turn-OFF Delay Time td(off) 1,130 s Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD See Fig. 1 (Note 3) See Fig. 2 (Note 3) 410 s 13 nC 3 nC VDS = 10 V, VGS = 4.5 V, ID = 14 A 2.4 IS = 14 A, VGS = 0 V 0.78 nC 1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note 3 : The fall switching time is dependent on the input pulse width. Fig.1 Switching Time Test Circuit 1 4.5V 0V VDD=10V VIN 4.5V 0V ID=7A RL=1.4 VOUT VIN D PW=10s D.C.1% 50 VDD=10V VIN ID=7A RL=1.4 VOUT VIN D PW 10ms D.C.1% Rg G P.G Fig.2 Switching Time Test Circuit 2 Rg G ECH8693R P.G S Rg=1k 50 Rg=1k www.onsemi.com 2 ECH8693R S ECH8693R Ta=25C VDS=10V 10.0 9.0 4.0 7.0 6.0 5.0 4.0 3.0 2.0 2.0 --25C 6.0 8.0 25C 8.0 .5V =1 V GS Ta=75 C 4.5V 10.0 ID -- VGS 11.0 Drain Current, ID -- A Drain Current, ID -- A 12.0 2.5V 4.0V 3 .1V 1.8 V ID -- VDS 14.0 1.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 0 0.5 RDS(on) -- VGS 20 Ta=25C 18 16 14 12 5A 10 ID=2.5A 8 6 4 2 0 2 0 4 6 8 8 C --25 C 25 3 2 6 A I =5 4.5V, D = V GS 4 2 --40 --20 0.4 0.5 0.6 0.7 0.8 40 60 3 2 Switching Time, S/W Time -- μs 3.0 2.5 2.0 1.5 1.0 0.5 2 4 6 8 10 120 140 160 12 VDD=10V VGS=4.5V PW=10μs tf 10k 7 5 3 2 1k 7 5 td(on) tr 3 10k 3.5 0 100 2 3 5 7 1.0 2 3 5 7 10 Source Current, IS -- A VDS=10V ID=14A 4.0 80 td (off) 100 0.1 0.9 VGS -- Qg 4.5 Gate to Source Voltage, VGS -- V 20 S/W Time -- ID Forward Source to Drain Voltage, VSD -- V 0 0 2 0.3 =5A , ID V 0 . =4 VGS =2 VGS 100k 7 5 Switching Time, S/W Time -- ns C 75 Ta= Forward Source Current, IS -- A 3 2 0.01 0.2 =3 V GS 2.5A I = .5V, D Ambient Temperature, Ta -- C 10 7 5 0.1 7 5 2.5 5A I D= , V .1 10 0 --60 VGS=0V 3 2 2.0 12 10 IS -- VSD 1.0 7 5 1.5 RDS(on) -- Ta 14 Gate to Source Voltage, VGS -- V 3 2 1.0 Gate to Source Voltage, VGS -- V Static Drain to Source On-State Resistance, RDS(on) -- m Static Drain to Source On-State Resistance, RDS(on) -- m Drain to Source Voltage, VDS -- V 1k S/W Time -- Input Pulse Width VDD=10V VGS=4.5V ID=7A td(off) tf 100 14 10 tr 1 td(on) 0.1 0.01 0.1 1.0 10 Input Pulse Width -- ms Total Gate Charge, Qg -- nC www.onsemi.com 3 100 ECH8693R PD -- Ta 1.6 1.5 1.2 To t al 1.0 0.8 1u Di ni 0.6 t ss ip at Drain Current, ID -- A Power Dissipation, PD -- W 1.4 io n 0.4 0.2 0 0 20 40 60 80 100 120 140 150 Thermal Resistance, RJA -- ºC/W Ambient Temperature, Ta -- C 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 SOA 2 Surface mounted on ceramic substrate (900mm20.8mm) 100 7 5 3 2 IDP=60A(PW10s) 100 s 1m s 10 ms 10 0m s ID=14A 10 7 5 3 2 1.0 7 5 3 2 DC op Operation in this area is limited by RDS(on). er at 0.1 7 Ta=25C 5 Single pulse 3 2 Surface mounted on ceramic substrate 2 0.01 (900mm 0.8mm) 1unit 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 ion 5 7 10 2 3 5 7100 Drain to Source Voltage, VDS -- V RJA -- Pulse Time Duty Cycle=0.5 0.2 0.1 0.05 0.02 0.01 ulse gle P Sin 0.01 7 5 3 2 0.001 0.000001 2 Surface mounted on ceramic substrate (900mm20.8mm) 1unit 3 5 70.00001 2 3 5 7 0.0001 2 3 5 7 0.001 2 3 5 7 0.01 Pulse Time, PT -- s www.onsemi.com 4 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 ECH8693R PACKAGE DIMENSIONS unit : mm SOT-28FL / ECH8 CASE 318BF ISSUE O to 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain Recommended Soldering Footprint 7 : Drain 8 : Drain 2.8 0.6 0.4 0.65 ORDERING INFORMATION Device ECH8693R-TL-W Marking Package Shipping (Qty / Packing) UQ SOT-28FL / ECH8 (Pb-Free / Halogen Free) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the ECH8693R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Please contact sales for use except the designated application. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 5