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onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
ECH8697R
Power MOSFET
for 1-2 Cells Lithium-ion Battery Protection
24 V, 11.6 mΩ, 10 A, Dual N-Channel
www.onsemi.com
This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines.
Best suited for 1-2 cells Lithium-ion Battery applications.
VDSS
Features
Low On-Resistance
2.5 V drive
Common-Drain Type
ESD Diode-Protected Gate
Built-in Gate Protection Resistor
Pb-Free, Halogen Free and RoHS compliance
RDS(on) Max
11.6 mΩ @ 4.5 V
12.6 mΩ @ 4.0 V
24 V
15 mΩ @ 3.1 V
ELECTRICAL CONNECTION
N-Channel
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Symbol
Value
Unit
Drain to Source Voltage
VDSS
24
Gate to Source Voltage
VGSS
ID
12.5
V
10
A
IDP
60
A
PD
1.5
W
PT
1.6
W
150
C
55 to +150
C
Drain Current (DC)
Drain Current (Pulse)
PW 10 s, duty cycle 1%
Power Dissipation
Surface mounted on ceramic substrate
2
(1000 mm 0.8 mm) 1 unit
Total Dissipation
Surface mounted on ceramic substrate
2
(1000 mm 0.8 mm)
Junction Temperature
Tj
Storage Temperature
Tstg
V
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Junction to Ambient
Surface mounted on ceramic substrate
2
(1000 mm 0.8 mm) 1 unit
© Semiconductor Components Industries, LLC, 2016
December 2016 - Rev. 3
1
2
3
4
MARKING
UU
LOT No.
SOT-28FL / ECH8
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
THERMAL RESISTANCE RATINGS
Parameter
10 A
17.5 mΩ @ 2.5 V
Typical Applications
1-2 cells Lithium-ion Battery Charging and Discharging Switch
Parameter
ID Max
Symbol
Value
RJA
83.3
1
Unit
C/W
Publication Order Number :
ECH8697R/D
ECH8697R
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2)
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
VGS(th)
gFS
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
RDS(on)
Value
Conditions
min
ID = 1 mA, VGS = 0 V
VDS = 20 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
24
VDS = 10 V, ID = 1 mA
0.5
typ
Unit
max
V
VDS = 10 V, ID = 5 A
1
A
1
A
1.3
V
5.0
S
ID = 5 A, VGS = 4.5 V
ID = 5 A, VGS = 4.0 V
7.4
9.3
11.6
m
7.7
9.7
12.6
m
ID = 5 A, VGS = 3.1 V
8.5
10.7
15
m
ID = 2.5 A, VGS = 2.5 V
10
12.5
17.5
m
Turn-ON Delay Time
td(on)
160
Rise Time
tr
230
ns
Turn-OFF Delay Time
td(off)
19.7
s
Fall Time
tf
23.6
s
Turn-ON Delay Time
td(on)
160
ns
Rise Time
tr
230
ns
Turn-OFF Delay Time
td(off)
980
s
Fall Time
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
See Fig. 1 (Note 3)
See Fig. 2 (Note 3)
ns
350
s
6
nC
1.1
nC
VDS = 10 V, VGS = 4.5 V, ID = 10 A
0.9
IS = 10 A, VGS = 0 V
nC
0.8
1.2
V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Note 3 : The fall switching time is dependent on the input pulse width.
Fig.1 Switching Time Test Circuit 1
4.5V
0V
Fig.2 Switching Time Test Circuit 2
VDD=10V
VIN
4.5V
0V
ID=5A
RL=2Ω
VIN
ID=5A
RL=2Ω
VIN
VOUT
D
PW=10μs
D.C.≤1%
VDD=10V
VIN
G
VOUT
D
PW >10ms
D.C.≤1%
G
ECH8697R
P.G
50Ω
ECH8697R
P.G
S
Rg=1.2kΩ
50Ω
Rg=1.2kΩ
www.onsemi.com
2
S
ECH8697R
ID -- VDS
8.0
6.0
5.0
4.0
3.0
1.0
Ta=25°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
25°C
2.0
2.0
0
0
1.0
0
0.5
RDS(on) -- VGS
40
Ta=25°C
35
5A
30
ID=2.5A
20
15
10
5
0
2
0
4
6
8
0A
15
10
.0A
I =5
4.5V, D
=
V GS
5
--40
--20
40
60
80
Switching Time, S/W Time -- ns
5 °C
25°
C
--25
°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
3
2
Switching Time, S/W Time -- μs
3.0
2.5
2.0
1.5
1.0
0.5
2
3
4
5
160
tf
10k
7
5
3
2
1k
7
5
td(on)
3
10k
3.5
1
140
tr
2
3
5
7
1.0
2
3
5
7
10
Drain Current, ID -- A
VGS -- Qg
0
120
VDD=10V
VGS=4.5V
PW=10μs
td (off)
100
0.1
1.0
VDS=10V
ID=10A
4.0
100
S/W Time -- ID
100k
7
5
Ta=
7
Source Current, IS -- A
20
2
4.5
Gate to Source Voltage, VGS -- V
0
0A
5.
I =
0V, D
.
4
=
VGS
=2
VGS
Diode Forward Voltage, VSD -- V
0
=
VGS
A
2.5
I =
.5V, D
5.
I D=
Ambient Temperature, Ta -- °C
10
7
5
3
2
0.01
2.5
V,
3.1
0
--60
VGS=0V
0.1
7
5
3
2
2.0
20
10
IS -- VSD
1.0
7
5
3
2
1.5
RDS(on) -- Ta
25
Gate to Source Voltage, VGS -- V
100
7
5
3
2
1.0
Gate to Source Voltage, VGS -- V
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
Drain to Source Voltage, VDS -- V
25
--25°C
4.0
7.0
Ta=75°
C
6.0
VDS=10V
9.0
Drain Current, ID -- A
2.5V
V
=1.5
VGS
1.8V
Drain Current, ID -- A
8.0
ID -- VGS
10.0
4.
3.1V 0V
4.5V
10.0
6
1k
S/W Time -- Input Pulse Width
VDD=10V
VGS=4.5V
ID=5A
td(off)
tf
100
7
Total Gate Charge, Qg -- nC
10
td(on)
1
tr
0.1
0.01
0.1
1.0
10
Input Pulse Width -- ms
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3
100
ECH8697R
PD -- Ta
100
7
5
3
2
Surface mounted on ceramic substrate
(1000mm2×0.8mm)
1.6
1.5
1.4
To
t
1.2
al
1.0
1u
0.8
Di
nit
ss
ip
at
io
n
0.6
0.4
0
20
40
60
80
100
120
0.1
7
5
3
2
Thermal Resistance, RθJA -- ºC/W
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
10
0μ
ID=10A
DC
10
s
m
10
s
1m
0m
s
s
op
er
at
Operation in this
ion
area is limited by RDS(on).
Ta=25°C
Single pulse
Surface mounted on ceramic substrate
(1000mm2×0.8mm) 1unit
0.01
0.01 2 3
140 150
Ambient Temperature, Ta -- °C
IDP=60A(PW≤10μs)
1.0
7
5
3
2
0.2
0
SOA
10
7
5
3
2
Drain Current, ID -- A
Power Dissipation, PD -- W
1.8
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Drain to Source Voltage, VDS -- V
RθJA -- Pulse Time
5 7100
Duty Cycle=0.5
0.2
0.1
0.05
0.02
0.01
ulse
gle P
Sin
0.01
7
5
3
2
0.001
0.000001 2
Surface mounted on ceramic substrate
(1000mm2×0.8mm) 1unit
3
5 70.00001 2
3
5 7 0.0001 2
3
5 7 0.001
2
3
5 7 0.01
Pulse Time, PT -- s
www.onsemi.com
4
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
ECH8697R
PACKAGE DIMENSIONS
unit : mm
SOT-28FL / ECH8
CASE 318BF
ISSUE O
to
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
Recommended
Soldering Footprint
7 : Drain
8 : Drain
2.8
0.6
0.4
0.65
ORDERING INFORMATION
Device
ECH8697R-TL-W
Marking
Package
Shipping (Qty / Packing)
UU
SOT-28FL / ECH8
(Pb-Free / Halogen Free)
3,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the ECH8697R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects. Please contact sales for use except the designated application.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries
in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other
intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON
Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is
responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters,
including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its
patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support
systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall
indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an
Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
www.onsemi.com
5
