EFC4618R-TR

EFC4618R Ordering number : ENA1881 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4618R General-Purpose Switching Device Applications Features • • • 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Source-to-Source Voltage Conditions Ratings VSSS VGSS Gate-to-Source Voltage Source Current (DC) IS ISP Source Current (Pulse) Total Dissipation Channel Temperature PT Tch Storage Temperature Tstg Unit 24 V ±12 V 6 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (5000mm2×0.8mm) 1.6 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7069-001 • Package : EFCP • JEITA, JEDEC :• Minimum Packing Quantity : 5,000 pcs./reel 1.81 Packing Type : TR 3 Marking 1.81 4 FT TR 2 LOT No. 0.22 1 0.37 0.15 Electrical Connection 1 0.65 0.65 1 4 1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 2 3 0.3 SANYO : EFCP1818-4CC-037 Rg 2 Rg 3 Rg=200Ω 4 http://semicon.sanyo.com/en/network 33011PF TKIM TC-00002594 No. A1881-1/5 EFC4618R Electrical Characteristics at Ta=25°C Parameter Symbol Source-to-Source Breakdown Voltage V(BR)SSS Zero-Gate Voltage Source Current ISSS Gate-to-Source Leakage Current IGSS Cutoff Voltage Forward Transfer Admittance Ratings Conditions min typ Unit max 24 Test Circuit 1 VGS(off) VGS=±8V, VSS=0V VSS=10V, IS=1mA Test Circuit 3 | yfs | VSS=10V, IS=3A Test Circuit 4 RSS(on)1 IS=3A, VGS=4.5V IS=3A, VGS=4.0V Test Circuit 5 13.5 19.8 23 mΩ RSS(on)2 Test Circuit 5 14 20.5 24 mΩ RSS(on)3 IS=3A, VGS=3.7V Test Circuit 5 14.5 21 25.5 mΩ RSS(on)4 IS=3A, VGS=3.1V Test Circuit 5 14.9 23 30 mΩ RSS(on)5 IS=3A, VGS=2.5V Test Circuit 5 18.5 27 35 mΩ td(on) tr See specified Test Circuit. Test Circuit 7 200 ns See specified Test Circuit. Test Circuit 7 815 ns td(off) tf See specified Test Circuit. Test Circuit 7 1840 ns See specified Test Circuit. Test Circuit 7 1770 ns Total Gate Charge Qg VSS=10V, VGS=4.5V, IS=6A Forward Source-to-Source Voltage VF(S-S) IS=3A, VGS=0V Static Source-to-Source On-State Resistance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Test Circuit 1 V IS=1mA, VGS=0V VSS=20V, VGS=0V Test Circuit 2 0.5 1 μA ±10 μA 1.3 6.5 25.4 0.76 Test Circuit 6 V S nC 1.2 V Test circuits are example of measuring FET1 side Test Circuit 1 VSSS / ISSS Test Circuit 2 IGSS(+) / (--) S2 S2 G2 G2 G1 G1 S1 S1 IT11565 Test Circuit 3 VGS(off) IT11566 Test Circuit 4 | yfs | S2 S2 G2 G2 10V 1mA G1 G1 S1 S1 IT11567 IT11568 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. No. A1881-2/5 EFC4618R Test Circuit 5 RSS(on) Test Circuit 6 VF(S-S) S2 S2 4.5V G2 G2 G1 G1 S1 S1 IT11569 IT11570 Test Circuit 8 Qg Test Circuit 7 td(on), tr, td(off), tf VDD=10V S2 IS=3A RL=3.33Ω V S2 OUT VIN G2 G2 G1 PW=10μs D.C.≤1% G1 S1 3.5 5 3.0 2.5 2.0 1.5 4 3 2 1 1.0 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Source-to-Source Voltage, VSS -- V RSS(on) -- VGS Static Source-to-Source On-State Resistance, RSS(on) -- mΩ 100 0.9 60 40 20 2 4 6 0.5 1.0 8 Gate-to-Source Voltage, VGS -- V 10 IT16086 1.5 2.0 Gate-to-Source Voltage, VGS -- V RSS(on) -- Ta 50 80 0 0 IT16105 Ta=25°C IS=3A 0 0 1.0 Static Source-to-Source On-State Resistance, RSS(on) -- mΩ 0 25°C --25°C 4.0 .5V 1 S= VG Ta=75° C 4.5 Source Current, IS -- A 5.0 VSS=10V 4.0V 3.1V 2.5V 10.0V 4.5V 5.5 IT15409 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. IS -- VGS 6 IS -- VSS 6.0 Source Current, IS -- A S1 IT11571 45 =3A , IS V 7 . =3 VGS 40 35 30 25 20 15 2.5 IT16085 3A , I S= 2.5V = 3A VGS 3.1V, I S= = VGS I =3A 4.5V, S = VGS =3A V, I S =4.0 VGS 10 5 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT16087 No. A1881-3/5 C 5° °C = 75 Ta °C 25 --2 3 2 0.1 7 5 3 2 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Source Current, IS -- A SW Time -- IS 10000 Switching Time, SW Time -- ns 5 3 td(off) 2 tf 1000 7 tr 5 3 td(on) 2 100 0.01 2 3 5 7 0.1 2 3 2 5 7 1.0 3 Source Current, IS -- A 0.1 7 5 3 2 0.1 7 5 10 IS=6A 10 s op era tio n Ta=25°C Single pulse When mounted on ceramic substrate (5000mm2×0.8mm) 2 3 5 7 1.0 2 3 5 7 10 0.6 0.7 0.8 0.9 1.0 IT16089 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 5 10 15 20 25 30 IT16091 PT -- Ta When mounted on ceramic substrate (5000mm2×0.8mm) 1.6 s 0.5 Total Gate Charge, Qg -- nC 0μ s 0m 0.4 VSS=10V IS=6A 4.0 0 5 7 10 m 5 7 0.1 0.3 VGS -- Qg 4.5 10 1m s 0.01 0.01 2 3 0.2 1.8 ISP=60A (PW≤10μs) Operation in this area is limited by RSS(on). 0.1 IT16090 ASO DC 0 Forward Source-to-Source Voltage, VF(S-S) -- V Total Dissipation, PT -- W Source Current, IS -- A 1.0 7 5 3 2 3 2 0.01 5 7 10 IT16088 VSS=10V VGS=4.5V 7 10 7 5 3 2 1.0 7 5 3 2 0.01 0.001 2 3 100 7 5 3 2 3 2 --25°C Source Current, IS -- A 3 2 VGS=0V C VSS=10V 1.0 7 5 IS -- VF(S-S) 10 7 5 25°C | yfs | -- IS Ta=7 5° 10 7 5 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S EFC4618R 1.4 1.2 1.0 0.8 0.6 0.4 0.2 2 3 Source-to-Source Voltage, VSS -- V 5 7 100 IT16106 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 150 IT16107 No. A1881-4/5 EFC4618R Note on usage : Since the EFC4618R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2011. Specifications and information herein are subject to change without notice. PS No. A1881-5/5