EFC4619R-TR

Ordering number : ENA2179A EFC4619R Power MOSFET 24V, 6A, 23mΩ N-Channel Dual EFCP http://onsemi.com Features  2.5V drive  Common-drain type  2KV ESD HBM  Protection diode in  Halogen free compliance Applications  Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Source to Source Voltage Conditions Ratings Unit VSSS 24 V Gate to Source Voltage VGSS 12 V Source Current (DC) IS Source Current (Pulse) ISP Total Dissipation PT Channel Temperature Storage Temperature 6 A PW10s, duty cycle1% 60 A When mounted on ceramic substrate (5000mm20.8mm) 1.6 W Tch 150 C Tstg - 55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7074 Ordering & Package Information Device EFC4619R-TR EFCP Shipping note 5000 pcs. / reel Pb-Free and Halogen-Free EFC4619R-TR 1.61 3 Packing Type: TR Marking 1.61 4 Package TR FU 2 LOT No. Electrical Connection 0.22 1 4 0.65 Rg 3 0.65 1: Source1 2: Gate1 3: Gate2 4: Source2 Rg 2 0.3 EFCP1616-4CE-022 Semiconductor Components Industries, LLC, 2014 January, 2014 Rg=200 1 12314HK/51513TKIM TC-00002913 No.A2179-1/9 EFC4619R Electrical Characteristics at Ta  25C Ratings Parameter Symbol Conditions Unit min typ max Source to Source Breakdown Voltage V(BR)SSS IS=1mA, VGS=0V Test Circuit 1 Zero-Gate Voltage Source Current ISSS VSS=20V, VGS=0V Test Circuit 1 1 A Gate to Source Leakage Current IGSS VGS=±8V, VSS=0V Test Circuit 2 1 A 1.3 V 23 m Cutoff Voltage VGS(off) VSS=10V, IS=1mA Test Circuit 3 Forward Transfer Admittance | yfs | VSS=10V, IS=3A Test Circuit 4 RSS(on)1 IS=3A, VGS=4.5V Test Circuit 5 RSS(on)2 IS=3A, VGS=4.0V RSS(on)3 IS=3A, VGS=3.7V RSS(on)4 RSS(on)5 Static Source to Source On-State Resistance 24 V 0.5 5.8 S 13.5 19.8 Test Circuit 5 14 20.5 24 m Test Circuit 5 14.5 21 25.5 m IS=3A, VGS=3.1V Test Circuit 5 14.9 23 30 m IS=3A, VGS=2.5V Test Circuit 5 18.5 27 35 m Turn-ON Delay Time td(on) 340 ns Rise Time tr 440 ns Turn-OFF Delay Time td(off) 24400 ns Fall Time tf Total Gate Charge Qg VSS=10V, VGS=4.5V, IS=6A Test Circuit 8 Forward Source to Source Voltage VF(S-S) IS=3A, VGS=0V VSS=10V, VGS=4.5V, IS=3A Test Circuit 7 Test Circuit 6 22400 ns 21.7 nC 0.8 1.2 V No.A2179-2/9 EFC4619R Test circuits are example of measuring FET1 side Test Circuit 2 IGSS Test Circuit 1 ISSS S2 S2 G2 G2 A G1 VSS G1 A VGS S1 S1 Test Circuit 3 VGS(off) When FET1 is measured, Gate and Source of FET2 are short-circuited. Test Circuit 4  yfs  S2 S2 G2 G2 A A When FET1 is measured, Gate and Source of FET2 are short-circuited. VGS VSS G1 VSS G1 VGS S1 S1 Test Circuit 6 VF(S-S) Test Circuit 5 RSS(on) S2 S2 4.5V IS IF G2 G2 V V G1 VGS VGS=0V G1 S1 S1 When FET1 is measured,+4.5V is added to VGS of FET2. Test Circuit 8 Qg Test Circuit 7 td(on), t r, td(off), t f S2 S2 RL A G2 G2 When FET1 is measured, Gate and Source of FET2 are short-circuited. V IG =1mA G1 R R S1 PG When FET1 is measured, Gate and Source of FET2 are short-circuited. VSS G1 RL S1 PG 50 VSS When FET1 is measured, Gate and Source of FET2 are short-circuited. No.A2179-3/9 EFC4619R IS -- VSS 3.5 3.0 V V GS=1.5 2.5 2.0 1.5 6 5 4 3 2 --25°C 4.0 7 Ta=75°C 4.5 Source Current, IS -- A Source Current, IS -- A 5.0 VSS=10V 8 4 .0 V 3 .1 V 5.5 IS -- VGS 9 2.5V 10.0V 4.5V 6.0 1.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 0 0.5 RSS(on) -- VGS 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 45 40 =3A , IS 2.5V = 3A VGS , I S= 3.1V = VGS 3A , I S= 4.5V = VGS 30 25 20 15 10 --40 --20 °C 75 °C 25 3 2 0.1 7 5 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.1 7 5 3 2 1K 7 5 tr 3 2 td(on) 3 5 7 0.1 2 3 5 7 1.0 Source Current, IS -- A 120 140 160 0.4 0.6 0.8 1.0 1.2 2 3 5 VGS -- Qg VSS=10V IS=6A 4.0 tf 2 0 4.5 VSS=10V VGS=4.5V 10K 7 5 100 0.01 100 Forward Source to Source Voltage, VF(S-S) -- V Gate to Source Voltage, VGS -- V Switching Time, S/W Time -- ns 3 2 80 3 2 0.01 5 7 10 S/W Time -- IS td(off) 60 1.0 7 5 Source Current, IS -- A 100K 7 5 40 3 2 3 2 3 2 0.01 0.001 20 VGS=0V Ta=7 5°C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S = Ta 0 IS -- VF(S-S) 10 7 5 3 2 C 5° 3A I S= 0V, =4. VGS Ambient Temperature, Ta -- °C | yfs | -- IS --2 2.5 35 0 --60 10 VSS=10V 1.0 7 5 2.0 =3A , IS V 7 . =3 VGS Gate to Source Voltage, VGS -- V 10 7 5 1.5 RSS(on) -- Ta 50 Ta=25°C IS=3A Static Source to Source On State Resistance, RSS(on) -- mΩ Static Source to Source On State Resistance, RSS(on) -- mΩ 100 1.0 Gate to Source Voltage, VGS -- V Source to Source Voltage, VSS -- V --25°C 0.1 0 25°C 0 25 ° C 1 0.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 7 0 0 5 10 15 20 25 Total Gate Charge, Qg -- nC No.A2179-4/9 EFC4619R 10 7 5 3 2 ASO ISP=60A(PW≤10μs) 0.1 7 5 3 2 10 1m s IS=6A ms 0m DC Operation in this area is limited by RSS(on). s op era tio n Ta=25°C Single pulse When mounted on ceramic substrate (5000mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Source Voltage to Source Voltage, VSS -- V When mounted on ceramic substrate (5000mm2×0.8mm) 1.6 0μ s 10 10 1.0 7 5 3 2 PT -- Ta 1.8 Total Dissipation, PT -- W Source Current, IS -- A 100 7 5 3 2 1.4 1.2 1.0 0.8 0.6 0.4 0.2 2 3 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C No.A2179-5/9 EFC4619R Taping Specification EFC4619R-TR No.A2179-6/9 EFC4619R No.A2179-7/9 EFC4619R Outline Drawing Land Pattern Example EFC4619R-TR Mass (g) Unit 0.0014 mm * For reference Unit: mm No.A2179-8/9 EFC4619R Note on usage : Since the EFC4619R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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