Ordering number : ENA2320
EFC4630R
Advance Information
http://onsemi.com
N-Channel Power MOSFET
24V, 6A, 45mΩ, Dual EFCP
Features
• Common-drain type
• 2.5V drive
• Halogen free compliance
• Built-in gate protection resistor
•
Best suited for LiB charging and discharging switch
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Value
Unit
Source-to-Source Voltage
VSSS
24
Gate-to-Source Voltage
VGSS
±12
V
Source Current (DC)
IS
6
A
Source Current (Pulse)
ISP
PW≤10μs, duty cycle≤1%
60
A
Total Dissipation
PT
When mounted on ceramic substrate (5000mm2×0.8mm)
1.6
W
150
°C
--55 to +150
°C
Junction Temperature
Tj
Storage Temperature
Tstg
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7064-001
EFC4630R-TR
1.26
4
• Package
: EFCP
• JEITA, JEDEC
:• Minimum Packing Quantity : 5,000 pcs./reel
3
Marking
1.26
Taping Type : TR
TR
FN
2
0.22
1
Electrical Connection
LOT No.
0.15
1
0.65
2
4
3
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
0.65
1
2
0.3
3
Rg
Rg
EFCP1313-4CC-037
This document contains information on a new product.
Specifications and information herein are subject to change without notice.
Rg=200Ω
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
32714HK PA No.A2320-1/6
EFC4630R
Electrical Characteristics at Ta=25°C
Parameter
Source-to-Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Symbol
V(BR)SSS
ISSS
IGSS
Value
Conditions
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=±8V, VSS=0V
min
Test Circuit 1
typ
24
V
Test Circuit 1
Test Circuit 2
VSS=10V, IS=1mA
Test Circuit 3
Unit
max
mA
±10
mA
VGS(th)
gFS
VSS=10V, IS=3A
RSS(on)1
RSS(on)2
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
24
39
45
mW
Test Circuit 5
25
41
48
mW
RSS(on)3
RSS(on)4
IS=3A, VGS=3.7V
IS=3A, VGS=3.1V
27.5
43
50
mW
Test Circuit 5
31.5
48
57
mW
RSS(on)5
td(on)
IS=3A, VGS=2.5V
58
72
mW
Turn-ON Delay Time
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
VSS=10V, VGS=4.5V, IS=6A
Forward Source-to-Source Voltage
VF(S-S)
IS=3A, VGS=0V
Forward Transconductance
Static Source-to-Source On-State Resistance
0.5
1
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
See specified Test Circuit.
Test Circuit 6
Test Circuit 7
Test Circuit 8
1.3
3.1
33.5
V
S
20
ns
230
ns
130
ns
210
ns
7
nC
0.8
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Ordering Information
Device
EFC4630R-TR
Package
Shipping
memo
EFCP
5,000pcs./reel
Pb-Free and Halogen Free
No.A2320-2/6
EFC4630R
Test circuits are example of measuring FET1 side
Test Circuit 2
IGSS
Test Circuit 1
ISSS
S2
S2
G2
G2
A
VSS
G1
G1
A
VGS
S1
Test Circuit 3
VGS(th)
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 4
gFS
S2
S2
G2
G2
A
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
VGS
VSS
G1
VSS
G1
VGS
S1
Test Circuit 5
RSS(on)
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 6
td(on), tr, td(off), tf
S2
S2
RL
IS
G2
G2
V
V
G1
VGS
G1
S1
S1
VSS
PG
Test Circuit 8
VF(S-S)
Test Circuit 7
Qg
S2
S2
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
IS
G2
G2
V
IG =1mA
G1
RL
VGS=0V
G1
S1
S1
PG
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
VSS
When FET1 is
measured,+4.5V is added to
VGS of FET2.
When FET2 is measured, the position of FET 1 and FET 2 is switched.
No.A2320-3/6
EFC4630R
IS -- VSS
V GS=1.5V
3.0
2.5
2.0
1.5
4
3
2
1
1.0
0.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Source-to-Source Voltage, VSS -- V
Static Source-to-Source
On-State Resistance, RSS(on) -- mΩ
100
80
60
40
20
0
0
2
4
6
8
Switching Time, SW Time -- ns
°C
25°C
--25°C
Ta=7
5
Source Current, IS -- A
3
2
0.01
0
0.2
0.4
0.6
0.8
1.0
Forward Source-to-Source Voltage, VF(S-S) -- V
VGS -- Qg
2.5
2.0
1.5
1.0
0.5
1
2
3
4
3A
.0V, I S=
V GS=4
20
--40 --20
0
20
40
5
Total Gate Charge, Qg -- nC
6
7
IT14686
60
80
100
120
140
5
160
IT14683
SW Time -- IS
VSS=10V
VGS=4.5V
3
td(off)
2
tf
100
tr
7
5
3
td(on)
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
100
7
5
3
2
10
7
5
3
2
ISP=60A (PW≤10μs)
10
1m
s
IS=6A
0μ
s
10
ms
1
DC 00m
op s
era
tio
n
1.0
7
5
3
2
0.1
7
5
3
2
IT14685
SOA
2
3.0
0
40
Source Current, IS -- A
3.5
0
60
IT14684
VSS=10V
IS=6A
4.0
3A
, I S=
2.5V
=
3A
VGS
, I S=
3.1V
=
VGS
A
, I S=3
=4.5V
S
VG
10
0.01
1.2
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
4.5
=3.7
VGS
80
7
3
2
0.1
7
5
=3A
V, I S
100
1000
1.0
7
5
2.0
HD14681
Ambient Temperature, Ta -- °C
VGS=0V
3
2
1.5
120
IT14682
IS -- VF(S-S)
1.0
RSS(on) -- Ta
0
--60
10
Gate-to-Source Voltage, VGS -- V
10
7
5
0.5
Gate-to-Source Voltage, VGS -- V
140
Ta=25°C
IS=3A
120
0
IT14720
RSS(on) -- VGS
140
0
2.0
Static Source-to-Source
On-State Resistance, RSS(on) -- mΩ
0
25°C --25°C
3.5
°C
4.0
Ta=7
5
4.5
VSS=10V
5
Source Current, IS -- A
Source Current, IS -- A
5.0
4.0V 3.1V
5.5
IS -- VGS(th)
6
2.5V
10.0V 4.5V
6.0
Operation in this area
is limited by RSS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (5000mm2×0.8mm)
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Source-to-Source Voltage, VSS -- V
2 3
5
HD14721
No.A2320-4/6
EFC4630R
PT -- Ta
1.8
When mounted on ceramic substrate
(5000mm2×0.8mm)
Total Dissipation, PT -- W
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14722
No.A2320-5/6
EFC4630R
Outline Drawing
EFC4630R-TR
Land Pattern Example
Mass (g) Unit
(0.0011) mm
* For reference
Unit: mm
0.65
0.65
0.3
Note on usage : Since the EFC4630R is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.A2320-6/6
