EFC6601R-A-TR

Ordering number : ENA2151A EFC6601R N-Channel Power MOSFET http://onsemi.com 24V, 13A, 11.5mΩ, Dual EFCP Features • • • 2.5V drive Common-drain type 2KV ESD HBM • • Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Source-to-Source Voltage Conditions Ratings VSSS VGSS Gate-to-Source Voltage Source Current (DC) IS ISP Source Current (Pulse) Total Dissipation Channel Temperature PT Tch Storage Temperature Tstg Unit 24 V ±12 V 13 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (5000mm2×0.8mm) 2.0 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7073-001 • Package : EFCP • JEITA, JEDEC :• Minimum Packing Quantity : 5,000 pcs./reel EFC6601R-TR 2.7 6 5 Taping Type : TR 4 Marking 1.81 MA LOT No. TR 2 3 0.2 1 Electrical Connection 4, 6 0.65 0.65 1 : Source1 2 : Gate1 3 : Source1 4 : Source2 5 : Gate2 6 : Source2 0.3 Rg 5 EFCP2718-6CE-020 Rg 2 Rg=200Ω Semiconductor Components Industries, LLC, 2013 July, 2013 1, 3 12313 TKIM TC-00002865/N2112 TKIM TC-00002837/HD 121009 PF No. A2151-1/8 EFC6601R Electrical Characteristics at Ta=25°C Parameter Symbol Source-to-Source Breakdown Voltage V(BR)SSS Zero-Gate Voltage Source Current ISSS Gate-to-Source Leakage Current IGSS Cutoff Voltage Forward Transfer Admittance Static Source-to-Source On-State Resistance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Ratings Conditions min Unit max 24 V IS=1mA, VGS=0V VSS=20V, VGS=0V Test Circuit 1 VGS(off) VGS=±8V, VSS=0V VSS=10V, IS=1mA Test Circuit 3 | yfs | VSS=10V, IS=3A Test Circuit 4 RSS(on)1 RSS(on)2 Test Circuit 5 6.6 9.5 11.5 Test Circuit 5 7.0 10 12 mΩ RSS(on)3 IS=3A, VGS=4.5V IS=3A, VGS=4.0V IS=3A, VGS=3.8V Test Circuit 5 7.3 10.5 13 mΩ RSS(on)4 IS=3A, VGS=3.1V Test Circuit 5 8.0 11.5 15 mΩ RSS(on)5 IS=3A, VGS=2.5V Test Circuit 5 9.0 13 17 mΩ td(on) tr Test Circuit 1 typ Test Circuit 2 VDD=10V, VGS=4.5V, IS=3A Test Circuit 7 Fall Time td(off) tf Total Gate Charge Qg VDD=10V, VGS=4.5V, IS=13A Test Circuit 8 Forward Source-to-Source Voltage VF(S-S) IS=3A, VGS=0V Test Circuit 6 0.5 1 μA ±1 μA 1.3 15.5 V S mΩ 280 ns 630 ns 53000 ns 47000 ns 48 0.76 nC 1.2 V Ordering Information Device EFC6601R-TR Package Shipping memo EFCP 5,000pcs./reel Pb Free and Halogen Free No. A2151-2/8 EFC6601R Test circuits are example of measuring FET1 side Test Circuit 2 IGSS Test Circuit 1 ISSS S2 S2 G2 G2 A VSS G1 G1 A VGS S1 When FET1 is measured, Gate and Source of FET2 are short-circuited. S1 Test Circuit 3 VGS(off) Test Circuit 4 | yfs | S2 S2 G2 G2 A A When FET1 is measured, Gate and Source of FET2 are short-circuited. VSS G1 VGS VSS G1 VGS S1 Test Circuit 6 VF(S-S) Test Circuit 5 RSS(on) S2 S2 4.5V IS IF G2 G2 V V G1 VGS VGS=0V G1 S1 S1 When FET1 is measured,+4.5V is added to VGS of FET2. Test Circuit 8 Qg Test Circuit 7 td(on), tr, td(off), tf S2 S2 RL A G2 G2 When FET1 is measured, Gate and Source of FET2 are short-circuited. V IG =1mA G1 R R S1 PG When FET1 is measured, Gate and Source of FET2 are short-circuited. S1 VDD PG 50Ω G1 RL S1 VDD When FET1 is measured, Gate and Source of FET2 are short-circuited. No. A2151-3/8 EFC6601R RSS(on) -- VGS 45 40 35 30 25 20 15 10 5 4 6 8 4 2 --40 --20 3.0 2.5 2.0 1.5 0 20 40 60 80 100 120 1.0 140 160 IT16977 IS -- VSS 5.0 Drain Current, IS -- A Gate to Source Voltage, VGS -- V 4V S= A, VG I S=3 5.5 3.5 4.5 .5V =1 V GS 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10 20 30 40 50 Total Gate Charge, Qg -- nC VSS=10V 14 13 12 11 10 9 8 7 5 4 3 --25°C Ta=75° C 6 1 0 25°C 2 0 0.5 1.0 1.5 0.01 0.4 0.5 C --25° 5°C Ta= 7 0 25° C 3 2 0.6 0.7 0.8 Forward Source to Source Voltage, VF(S-S) -- V 0.9 IT16982 0.5 0.6 0.7 0.8 0.9 1.0 IT16979 VSS=10V 10 7 5 3 2 C 5° = Ta 1.0 7 5 --2 25 3 2 °C 75 °C 0.1 7 5 3 2 2 3 5 7 1.0 2 3 5 7 10 Source Current, IS -- A Switching Time, S/W Time -- ns 1.0 7 5 0.4 | yfs | -- IS 2 IT16981 S/W Time -- ID 100K 7 5 3 2 0.3 0.01 0.001 2 3 5 7 0.01 2 3 5 7 0.1 VGS=0V 3 2 3 2 IT16980 IS -- VF(S-S) 0.1 7 5 0.2 Drain to Source Voltage, VSS -- V 2.0 Gate to Source Voltage, VGS -- V 10 7 5 0.1 0 IT16978 IS -- VGS 15 0 60 Forward Transfer Admittance, | yfs | -- S 0 Source Current, IS -- A 6 6.0 0.5 Source Current, IF -- A 8 Ambient Temperature, Ta -- °C VSS=10V IS=13A 4.0 10 IT16976 Qg -- VGS 4.5 12 0 --60 10 Gate to Source Voltage, VGS -- V 14 2.5V 2 V 2.5 S= .1V 3.8V G V = 3 3A, VGS S= I S= , VG 3A, A 3 I S= I S= V =4.5 S VG 3A, I S= 16 4.0V 3.1V 0 18 10.0V 4.5V 0 RSS(on) -- Ta 20 Ta=25°C IS=3A Static Source to Source On State Resistance, RSS(on) -- mΩ Static Source to Source On State Resistance, RSS(on) -- mΩ 50 tf td ( of f) 3 2 10K 7 5 3 2 tr 1K 7 5 3 2 td(on) VSS=10V VGS=4.5V 100 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Source Current, IS -- A 3 5 7 10 2 IT16983 No. A2151-4/8 EFC6601R 10 7 5 3 2 ASO ISP=60A(PW≤10μs) 0.1 7 5 3 2 0μ s s IS=13A 10 DC Operation in this area is limited by RDS(on). ms 10 0m s op era tio n Ta=25°C Single pulse When mounted on ceramic substrate (5000mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 When mounted on ceramic substrate (5000mm2×0.8mm) 10 1m 1.0 7 5 3 2 PT -- Ta 2.5 Total Dissipation, PT -- W Source Current, IS -- A 100 7 5 3 2 5 7 1.0 2 3 5 7 10 Source Voltage to Source Voltage, VSS -- V 2 3 5 IT16984 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 IT16985 No. A2151-5/8 EFC6601R Taping Specification EFC6601R-TR No. A2151-6/8 EFC6601R Outline Drawing EFC6601R-TR Land Pattern Example Mass (g) Unit 0.0024 mm * For reference Unit: mm No. A2151-7/8 EFC6601R Note on usage : Since the EFC6601R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A2151-8/8 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: EFC6601R-TR EFC6601R-A-TR