EFC6602R-A-TR

Ordering number : ENA2152A EFC6602R N-Channel Power MOSFET http://onsemi.com 12V, 18A, 5.9mΩ, Dual EFCP Features • • • 2.5V drive Common-drain type 2KV ESD HBM • • Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Source-to-Source Voltage Conditions Ratings VSSS VGSS Gate-to-Source Voltage Source Current (DC) IS ISP Source Current (Pulse) Total Dissipation Channel Temperature PT Tch Storage Temperature Tstg Unit 12 V ±12 V 18 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (5000mm2×0.8mm) 2.0 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7073-001 • Package : EFCP • JEITA, JEDEC :• Minimum Packing Quantity : 5,000 pcs./reel EFC6602R-TR 2.7 6 5 Taping Type : TR 4 Marking 1.81 MB LOT No. TR 2 3 Electrical Connection 0.2 1 4, 6 0.65 0.65 1 : Source1 2 : Gate1 3 : Source1 4 : Source2 5 : Gate2 6 : Source2 0.3 Rg 5 EFCP2718-6CE-020 Rg 2 Rg=200Ω Semiconductor Components Industries, LLC, 2013 July, 2013 1, 3 13013 TKIM TC-00002866/N2112 TKIM TC-00002838/HD 121009 PF No. A2152-1/8 EFC6602R Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions Unit max 12 V Source-to-Source Breakdown Voltage V(BR)SSS ISSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VSS=0V VSS=6V, IS=1mA Test Circuit 2 Cutoff Voltage Forward Transfer Admittance | yfs | VSS=6V, IS=3A Test Circuit 4 RSS(on)1 RSS(on)2 Test Circuit 5 3.1 4.5 5.9 Test Circuit 5 3.3 4.8 6.3 mΩ RSS(on)3 IS=3A, VGS=4.5V IS=3A, VGS=4.0V IS=3A, VGS=3.8V Test Circuit 5 3.5 5 6.5 mΩ RSS(on)4 IS=3A, VGS=3.1V Test Circuit 5 4.0 5.8 8.2 mΩ RSS(on)5 IS=3A, VGS=2.5V Test Circuit 5 5.2 7.5 11 mΩ Turn-ON Delay Time Test Circuit 1 typ Zero-Gate Voltage Source Current Static Source-to-Source On-State Resistance IS=1mA, VGS=0V VSS=10V, VGS=0V min Test Circuit 1 Test Circuit 3 0.5 ±1 μA 13 Rise Time Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg VDD=6V, VGS=4.5V, IS=18A Test Circuit 8 55 Forward Source-to-Source Voltage VF(S-S) IS=3A, VGS=0V Test Circuit 6 0.76 Test Circuit 7 μA 1.3 td(on) tr VDD=6V, VGS=4.5V, IS=3A 1 V S mΩ 530 ns 2100 ns 6200 ns 5500 ns nC 1.2 V Ordering Information Device EFC6602R-TR Package Shipping memo EFCP 5,000pcs./reel Pb Free and Halogen Free No. A2152-2/8 EFC6602R Test circuits are example of measuring FET1 side Test Circuit 2 IGSS Test Circuit 1 ISSS S2 S2 G2 G2 A VSS G1 G1 A VGS S1 When FET1 is measured, Gate and Source of FET2 are short-circuited. S1 Test Circuit 3 VGS(off) Test Circuit 4 | yfs | S2 S2 G2 G2 A A When FET1 is measured, Gate and Source of FET2 are short-circuited. VSS G1 VGS VSS G1 VGS S1 Test Circuit 6 VF(S-S) Test Circuit 5 RSS(on) S2 S2 4.5V IS IF G2 G2 V V G1 VGS VGS=0V G1 S1 S1 When FET1 is measured,+4.5V is added to VGS of FET2. Test Circuit 8 Qg Test Circuit 7 td(on), tr, td(off), tf S2 S2 RL A G2 G2 When FET1 is measured, Gate and Source of FET2 are short-circuited. V IG =1mA G1 R R S1 PG When FET1 is measured, Gate and Source of FET2 are short-circuited. S1 VDD PG 50Ω G1 RL S1 VDD When FET1 is measured, Gate and Source of FET2 are short-circuited. No. A2152-3/8 EFC6602R VSS=6V 18 14 12 10 8 6 25°C 4 --25°C Ta=75° C 2 0 0.5 1.0 1.5 Switching Time, S/W Time -- ns 0.4 0.6 0.8 1.0 Forward Source to Source Voltage, VF(S-S) -- V Qg -- VGS 4.5 2.0 1.5 1.0 0.5 10 20 30 40 50 Total Gate Charge, Qg -- nC tr 2 1K 7 td(on) 5 3 2 VSS=6V VGS=4.5V ,V A =3 ID =4 V GS 4 .0V 0 --60 --40 --20 0 =4 V GS 2 3 5 7 1.0 2 3 5 7 10 2 3 IT16989 Ta=25°C IS=3A 45 40 35 30 25 20 15 10 5 0 2 4 6 8 10 IT16991 ID -- VSS 4.5V 4.0V .1V .5V , , 5 7 0.1 RSS(on) -- VGS 5.0 =3 GS A =3 ID 3A I D= 3 4.5 4.0 3.1V 7V =3. V GS V 2 3.5 2.5V A, =3 ID tf Gate to Source Voltage, VGS -- V Drain Current, ID -- A Static Source to Source On State Resistance, RSS(on) -- mΩ 10 5 7 10 IT16987 3 0 60 .5V =2 GS 2 3 5 5.5 2 5 7 1.0 td (off) 6.0 12 6 2 3 S/W Time -- IS IT16990 RSS(on) -- Ta 14 , 3A I D= 5 7 0.1 Source Current, IS -- A Static Source to Source On State Resistance, RSS(on) -- mΩ Gate to Source Voltage, VGS -- V 2.5 8 5 7 0.01 2 3 50 3.0 0 3 2 IT16988 3.5 0 0.1 7 5 100 0.01 1.2 VSS=6V IS=18A 4.0 °C 25 V 25°C --25°C 3 2 Ta= 75°C Source Current, IS -- A 1.0 7 5 0 3 2 7 3 2 0.01 1.0 7 5 10K 10 7 5 3 2 C 5° --2 = °C Ta 75 Source Current, IS -- A VGS=0V 0.1 7 5 3 2 IT16986 IS -- VF(S-S) 3 2 10 7 5 0.01 0.001 2 3 2.0 Gate to Source Voltage, VGS -- V VSS=6V 1.5 0 | yfs | -- IS 3 2 10.0V Source Current, IS -- A 16 Forward Transfer Admittance, | yfs | -- S IS -- VGS 20 3.0 2.5 2.0 1.3V V GS= 1.5 1.0 0.5 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT16992 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Source to Source Voltage, VDS -- V 0.9 1.0 IT16993 No. A2152-4/8 EFC6602R 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO 10 0μ 1m s s ISP=60A(PW≤10μs) IS=18A 10 DC Operation in this area is limited by RDS(on). ms 10 0m op s era tio n Ta=25°C Single pulse When mounted on ceramic substrate (5000mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 PT -- Ta 2.5 Total Dissipation, PT -- W Source Current, IS -- A 100 7 5 3 2 2 3 5 7 10 Source Voltage to Source Voltage, VSS -- V 2 3 IT16994 When mounted on ceramic substrate (5000mm2×0.8mm) 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 IT16995 No. A2152-5/8 EFC6602R Taping Specification EFC6602R-TR No. A2152-6/8 EFC6602R Outline Drawing EFC6602R-TR Land Pattern Example Mass (g) Unit 0.0024 mm * For reference Unit: mm No. A2152-7/8 EFC6602R Note on usage : Since the EFC6602R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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