EFC6602R-TR

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. EFC6602R Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 5.9 mΩ, 18 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. VSSS Features  2.5 V drive  2 kV ESD HBM  Common-Drain type  ESD Diode-Protected Gate  Pb-Free, Halogen Free and RoHS compliance 12 V RSS(on) Max 5.9 mΩ @ 4.5 V IS Max 6.3 mΩ @ 4.0 V 18 A 6.5 mΩ @ 3.8 V 8.2 mΩ @ 3.1 V 11 mΩ @ 2.5 V ELECTRICAL CONNECTION N-Channel Typical Applications 1-Cell Lithium-ion Battery Charging and Discharging Switch 4, 6 SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1) Parameter Source to Source Voltage Gate to Source Voltage Symbol VSSS VGSS IS Value 12 12 18 Unit V V A Source Current (DC) Source Current (Pulse) A ISP 60 PW  10 s, duty cycle  1% PT Total Dissipation (Note 2) 2.0 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Rg 5 1 : Source1 2 : Gate1 3 : Source1 4 : Source2 5 : Gate2 6 : Source2 Rg 2 Rg=200Ω 1, 3 THERMAL RESISTANCE RATINGS Parameter Junction to Ambient (Note 2) Symbol Value RJA Unit 62.5 MARKING C/W MB 2 Note 2 : Surface mounted on ceramic substrate (5000 mm  0.8 mm). WLCSP6 1.81x2.70 / EFCP2718-6CE-020 LOT No. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2016 September 2016 - Rev. 2 1 Publication Order Number : EFC6602R/D EFC6602R ELECTRICAL CHARACTERISTICS at Ta  25C (Note 3) Parameter Source to Source Breakdown Voltage Zero-Gate Voltage Source Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Source to Source On-State Resistance Symbol min typ max IS = 1 mA, VGS = 0 V Test Circuit 1 VSS = 10 V, VGS = 0 V Test Circuit 1 IGSS VGS(th) gFS VGS = 8 V, VSS = 0 V VSS = 6 V, IS = 1 mA Test Circuit 3 VSS = 6 V, IS = 3 A Test Circuit 4 IS = 3 A, VGS = 4.5 V Test Circuit 5 3.1 4.5 5.9 m IS = 3 A, VGS = 4.0 V IS = 3 A, VGS = 3.8 V Test Circuit 5 Test Circuit 5 3.3 4.8 6.3 m 3.5 5.0 6.5 m IS = 3 A, VGS = 3.1 V Test Circuit 5 4.0 5.8 8.2 m IS = 3 A, VGS = 2.5 V Test Circuit 5 5.2 7.5 11 m RSS(on) td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Qg VSS = 6 V, VG S= 4.5 V IS = 3 A VSS = 6 V, VGS = 4.5 V IS = 18 A 12 Unit V(BR)SSS ISSS Turn-ON Delay Time Total Gate Charge Value Conditions V Test Circuit 2 Test Circuit 6 Test Circuit 7 0.5 1 A 1 A 1.3 13 V S 530 ns 2,100 ns 6,200 ns 5,500 ns 55 nC Forward Source to Source Voltage IS = 3 A, VGS = 0 V Test Circuit 8 0.76 1.2 V VF(S-S) Note 3: Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 EFC6602R Test circuits are example of measuring FET1 side Test Circuit 2 IGSS Test Circuit 1 V(BR)SSS / ISSS S2 S2 G2 G2 A G1 VSS G1 A VGS S1 Test Circuit 3 VGS(th) S1 When FET1 is measured, Gate and Source of FET2 are short-circuited. Test Circuit 4 gFS S2 S2 G2 G2 A A When FET1 is measured, Gate and Source of FET2 are short-circuited. G1 VGS G1 VSS VGS S1 VSS S1 Test Circuit 6 td(on), tr, td(off), tf Test Circuit 5 RSS(on) S2 S2 IS RL G2 G2 V V G1 G1 VGS When FET1 is measured, Gate and Source of FET2 are short-circuited. VSS S1 S1 When FET1 is measured, Gate and Source of FET2 are short-circuited. PG Test Circuit 8 VF(S-S) Test Circuit 7 Qg S2 S2 IS A When FET1 is measured, Gate and Source of FET2 are short-circuited. G2 G2 V IG =1mA G1 RL VGS=0V S1 S1 PG G1 VSS When FET2 is measured, the position of FET1 and FET2 is switched. www.onsemi.com 3 When FET1 is measured,+4.5V is added to VGS of FET2. EFC6602R www.onsemi.com 4 EFC6602R www.onsemi.com 5 EFC6602R PACKAGE DIMENSIONS unit : mm WLCSP6 1.81x2.70 / EFCP2718-6CE-020 CASE 567HS ISSUE A D A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. B DIM A b D E e E PIN 1 REFERENCE 0.05 C 2X 0.05 C 2X TOP VIEW A 0.05 C RECOMMENDED SOLDERING FOOTPRINT* 0.05 C C SIDE VIEW b C A B 6X 0.05 M MILLIMETERS MIN MAX 0.22 0.18 0.27 0.33 2.70 BSC 1.81 BSC 0.65 BSC SEATING PLANE PACKAGE OUTLINE e 1 2 3 e 0.65 PITCH 6X 1 0.30 0.65 PITCH 6 5 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 4 BOTTOM VIEW 1 : Source 1 2 : Gate 1 3 : Source 1 4 : Source 2 5 : Gate 2 6 : Source 2 ORDERING INFORMATION Device EFC6602R-TR Marking MB Package WLCSP6 1.81x2.70 / EFCP2718−6CE−020 (Pb-Free / Halogen Free) Shipping (Qty / Packing) 5,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the EFC6602R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Please contact sales for use except the designated application. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 6