EFC6604R-TR

EFC6604R Power MOSFET for 1-Cell Lithium-ion Battery Protection 12V, 9.0mΩ, 13A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. Features  2.5V drive  2kV ESD HBM  Common-Drain Type  ESD Diode-Protected Gate  Pb-Free, Halogen Free and RoHS compliance VSSS RSS(on) Max 9.0mΩ@ 4.5V 12V 10.0mΩ@ 3.8V 9.7mΩ@ 4.0V 17.7mΩ@ 2.5V ELECTRICAL CONNECTION N-Channel 4, 6 SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1) Symbol VSSS VGSS IS Value 12 12 13 Unit V V A Source Current (DC) Source Current (Pulse) A ISP 60 PW10s, duty cycle1% Total Dissipation PT Surface mounted on ceramic substrate 1.6 W 2 (5000mm  0.8mm) Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient Surface mounted on ceramic substrate 2 (5000mm  0.8mm) 13A 12.7mΩ@ 3.1V Applications  1-Cell Lithium-ion Battery Charging and Discharging Switch Parameter Source to Source Voltage Gate to Source Voltage IS Max Rg 5 Rg 2 Rg=200Ω 1, 3 1 : Source1 2 : Gate1 3 : Source1 4 : Source2 5 : Gate2 6 : Source2 MARKING MD Symbol Value RJA Unit 78.1 LOT No. C/W ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2016 March 2016 - Rev. 2 1 Publication Order Number : EFC6604R/D EFC6604R ELECTRICAL CHARACTERISTICS at Ta  25C (Note 2) Parameter Symbol Conditions Ratings min typ max Unit Source to Source Breakdown Voltage V(BR)SSS IS=1mA, VGS=0V Test Circuit 1 Zero-Gate Voltage Source Current ISSS VSS=10V, VGS=0V Test Circuit 1 Gate to Source Leakage Current IGSS VGS(th) gFS VGS=±8V, VSS=0V VSS=6V, IS=1mA Test Circuit 3 VSS=6V, IS=3A Test Circuit 4 RSS(on)1 RSS(on)2 RSS(on)3 IS=3A, VGS=4.5V IS=3A, VGS=4.0V Test Circuit 5 6.0 7.5 9.0 m Test Circuit 5 6.4 8.1 9.7 m IS=3A, VGS=3.8V Test Circuit 5 6.7 8.4 10.0 m RSS(on)4 RSS(on)5 IS=3A, VGS=3.1V Test Circuit 5 7.8 9.8 12.7 m IS=3A, VGS=2.5V Test Circuit 5 10.0 12.6 17.7 m Gate Threshold Voltage Forward Transconductance Static Source to Source On-State Resistance Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg 12 V Test Circuit 2 VSS=6V, VGS=4.5V, IS=3A Test Circuit 6 VSS=6V, VGS=4.5V, IS=13A Test Circuit 7 0.5 1 A 1.0 A 1.3 V 13.7 S 300 ns 1200 ns 5200 ns 3900 ns 29 nC Forward Source to Source Voltage IS=3A, VGS=0V Test Circuit 8 0.75 1.2 V VF(S-S) Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 EFC6604R Test circuits are example of measuring FET1 side Test Circuit 2 IGSS Test Circuit 1 VSSS / ISSS S2 S2 G2 G2 A G1 VSS G1 A VGS S1 S1 Test Circuit 3 VGS(th) When FET1 is measured, Gate and Source of FET2 are short-circuited. Test Circuit 4 gFS S2 S2 G2 G2 A A When FET1 is measured, Gate and Source of FET2 are short-circuited. G1 VGS G1 VSS VGS S1 VSS S1 Test Circuit 6 td(on), tr, td(off), tf Test Circuit 5 RSS(on) S2 S2 IS RL G2 G2 V V G1 G1 VGS When FET1 is measured, Gate and Source of FET2 are short-circuited. VSS S1 S1 When FET1 is measured, Gate and Source of FET2 are short-circuited. PG Test Circuit 8 VF(S-S) Test Circuit 7 Qg S2 S2 IS A When FET1 is measured, Gate and Source of FET2 are short-circuited. G2 G2 V IG =1mA G1 RL VGS=0V S1 S1 PG G1 VSS When FET2 is measured, the position of FET1 and FET2 is switched. www.onsemi.com 3 When FET1 is measured,+4.5V is added to VGS of FET2. EFC6604R www.onsemi.com 4 EFC6604R www.onsemi.com 5 EFC6604R PACKAGE DIMENSIONS unit : mm WLCSP6 1.91x1.46 / EFCP1915-6CE-020 CASE 614AC ISSUE B D A PIN 1 REFERENCE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. DIM A b D E e E 0.05 C 2X 0.05 C 2X TOP VIEW A 0.05 C RECOMMENDED SOLDERING FOOTPRINT* 0.05 C SIDE VIEW 0.05 M C SEATING PLANE PACKAGE OUTLINE e b 6X MILLIMETERS MIN MAX 0.22 0.18 0.27 0.33 1.91 BSC 1.46 BSC 0.65 BSC 1 C A B 2 3 0.65 PITCH e 0.65 PITCH 1: Source1 6 2: Gate1 5 0.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 4 BOTTOM VIEW 3: Source1 6X 1 4: Source2 5: Gate2 6: Source2 ORDERING INFORMATION Device EFC6604R-TR Marking MD Package WLCSP6 1.91x1.46 / EFCP1915-6CE-020 (Pb-Free / Halogen Free) Shipping (Qty / Packing) 5,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the EFC6604R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Please contact sales for use except the designated application. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. 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