EFC6605R-TR

Ordering number : ENA2302 EFC6605R N-Channel Power MOSFET 20V, 10A, 13.3mΩ, Dual EFCP http://onsemi.com Features • 2.5V drive • Protection diode in • Halogen free compliance • Common-drain type • 2KV ESD HBM Applications • Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Value Unit Source to Source Voltage VSSS 20 V Gate to Source Voltage VGSS ±10 V Source Current (DC) IS 10 A Source Current (Pulse) ISP PW≤10μs, duty cycle≤1% 60 A Total Dissipation PT When mounted on ceramic substrate (5000mm2×0.8mm) 1.6 W Junction Temperature Tj 150 °C Storage Temperature Tstg - 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (5000mm2×0.8mm) Symbol RθJA Value 78.1 Unit °C /W Electrical Characteristics at Ta = 25°C Parameter Symbol Value Conditions min typ Unit max Source to Source Breakdown Voltage V(BR)SSS IS=1mA, VGS=0V Test Circuit 1 Zero-Gate Voltage Source Current ISSS VSS=20V, VGS=0V Test Circuit 1 1 μA Gate to Source Leakage Current IGSS VGS=±8V, VSS=0V Test Circuit 2 ±1.0 μA Gate Threshold Voltage VGS(th) VSS10V, IS=1mA Test Circuit 3 Forward Transconductance gFS VSS=10V, IS=3A Test Circuit 4 RSS(on)1 IS=3A, VGS=4.5V Test Circuit 5 8.8 11.1 13.3 mΩ RSS(on)2 IS=3A, VGS=4.0V Test Circuit 5 9.1 11.4 13.7 mΩ RSS(on)3 IS=3A, VGS=3.8V Test Circuit 5 9.3 11.6 13.9 mΩ RSS(on)4 IS=3A, VGS=3.1V Test Circuit 5 10.0 12.5 15.6 mΩ RSS(on)5 IS=3A, VGS=2.5V Test Circuit 5 11.1 13.9 17.4 mΩ Static Source to Source On-State Resistance 20 V 0.5 1.3 11.4 V S Continued on next page. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 March, 2014 32714 TKIM TC-00003101 No.A2302-1/6 EFC6605R Continued from preceding page. Value Parameter Symbol Conditions Unit min typ max Turn-ON Delay Time td(on) 154 ns Rise Time tr 678 ns Turn-OFF Delay Time td(off) 44400 ns Fall Time tf 60800 ns Total Gate Charge Qg VSS=10V, VGS=4.5V, IS=10A Test Circuit 7 19.8 nC Forward Source to Source Voltage VF(S-S) IS=3A, VGS=0V 0.75 VSS=10V, VGS=4.5V, IS=3A Test Circuit 6 Test Circuit 8 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Ordering & Package Information Device Package EFC6605R-TR Packing Type: TR EFCP Shipping note 5,000 pcs. / reel Pb-Free and Halogen Free Marking Electrical Connection 4, 6 TR ME LOT No. Rg 5 Rg 2 Rg=200Ω 1, 3 No.A2302-2/6 EFC6605R Test circuits are example of measuring FET1 side Test Circuit 2 IGSS Test Circuit 1 ISSS S2 S2 G2 G2 A G1 VSS G1 A VGS S1 Test Circuit 3 VGS(th) S1 When FET1 is measured, Gate and Source of FET2 are short-circuited. Test Circuit 4 gFS S2 S2 G2 G2 A A When FET1 is measured, Gate and Source of FET2 are short-circuited. VGS VSS G1 VSS G1 VGS S1 S1 Test Circuit 6 td(on), tr, td(off), tf Test Circuit 5 RSS(on) S2 S2 RL IS G2 G2 V V G1 G1 VGS When FET1 is measured, Gate and Source of FET2 are short-circuited. VSS S1 S1 When FET1 is measured, Gate and Source of FET2 are short-circuited. PG Test Circuit 8 VF(S-S) Test Circuit 7 Qg S2 S2 IS A When FET1 is measured, Gate and Source of FET2 are short-circuited. G2 G2 V IG =1mA G1 RL G1 S1 S1 PG VGS=0V VSS When FET1 is measured,+4.5V is added to VGS of FET2. When FET2 is measured, the position of FET1 and FET2 is switched. No.A2302-3/6 EFC6605R Source Current, IS -- A No.A2302-4/6 EFC6605R No.A2302-5/6 EFC6605R Package Dimensions EFC6605R-TR EFCP1915-6CE-020 unit : mm 1: Source1 2: Gate1 Recommended Soldering Footprint 3: Source1 4: Source2 5: Gate2 6: Source2 Note on usage : Since the EFC6605R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.A2302-6/6