EFC8811R-TF

DATA SHEET www.onsemi.com MOSFET – Power, Dual N-Channel, for 1-Cell Lithium-ion Battery Protection VSSS 12 V IS MAX 3.2 mW @ 4.5 V 27 A 3.2 mW @ 4.0 V 3.2 mW @ 3.8 V 4.4 mW @ 3.1 V 6.3 mW @ 2.5 V 12V, 3.2mW, 27A ELECTRICAL CONNECTION N−Channel EFC8811R This Power MOSFET features a low on−state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1−cell lithium−ion battery applications. 4, 6 Rg 5 Features • • • • • RSS(on) MAX 2.5 V Drive 2 kV ESD HBM Common−Drain Type ESD Diode−Protected Gate Pb−Free, Halogen Free and RoHS Compliance Rg 2 Applications • 1−Cell Lithium−ion Battery Charging and Discharging Switch 1: Source1 2: Gate1 3: Source1 4: Source2 5: Gate2 6: Source2 1, 3 Rg = 200 W MARKING DIAGRAM SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Symbol Value Unit Source to Source Voltage VSSS 12 V Gate to Source Voltage VGSS ±8 V Source Current (DC) IS 27 A Source Current (Pulse) PW ≤ 100 ms, Duty Cycle ≤ 1% ISP 100 A Total Dissipation Surface mounted on ceramic substrate (5000 mm2 x 0.8 mm) PT 2.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C ML YMZZ CSP6, 1.77x3.54/ EFCP3517−6DGH−020 CASE 568AL ML Y M ZZ = Device Code = Year of Production = Month of Assembly Operation = Assembly Lot Number PIN CONNECTIONS 1 2 Unit 6 5 °C/W 1: Source1 2: Gate1 3: Source1 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient Surface mounted on ceramic substrate (5000 mm2 x 0.8 mm) Symbol RqJA Value 50 4 4: Source2 5: Gate2 6: Source2 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 October, 2022 − Rev. 1 1 Publication Order Number: EFC8811R/D EFC8811R ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Source to Source Breakdown Voltage Symbol Test Condition Min Typ Max Unit V(BR)SSS IS = 1 mA, VGS = 0 V (Test Circuit 1) 12 − − V Zero−Gate Voltage Source Current ISSS VSS = 10 V, VGS = 0 V (Test Circuit 1) − − 1 mA Gate to Source Leakage Current IGSS VGS = ±8 V, VSS = 0 V (Test Circuit 2) − − ±1 mA 0.5 − 1.3 V − 19 − S Gate Threshold Voltage Forward Transconductance Static Source to Source On−State Resistance Turn−ON Delay Time Rise Time VGS(th) gFS Fall Time Total Gate Charge Forward Source to Source Voltage VSS = 6 V, IS = 3 A (Test Circuit 4) RSS(on)1 IS = 5 A, VGS = 4.5 V (Test Circuit 5) 1.8 2.3 3.2 mW RSS(on)2 IS = 5 A, VGS = 4.0 V (Test Circuit 5) 1.9 2.4 3.2 mW RSS(on)3 IS = 5 A, VGS = 3.8 V (Test Circuit 5) 2.0 2.6 3.2 mW RSS(on)4 IS = 5 A, VGS = 3.1 V (Test Circuit 5) 2.1 3.3 4.4 mW RSS(on)5 IS = 5 A, VGS = 2.5 V (Test Circuit 5) 2.7 4.0 6.3 mW − 80 − ns − 570 − ns td(off) − 38,000 − ns tf − 17,700 − ns td(on) tr Turn−OFF Delay Time VSS = 6 V, IS = 1 mA (Test Circuit 3) VSS = 6 V, VGS = 4.5 V, IS = 3 A (Test Circuit 6) Qg VSS = 6 V, VGS = 4.5 V, IS = 27 A (Test Circuit 7) − 100 − nC VF(S−S) IS = 3 A, VGS = 0 V (Test Circuit 8) − 0.75 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device EFC8811R−TF Marking Package Shipping (Qty / Packing)† ML CSP6, 1.77 × 3.54 EFCP3517−6DGH−020 (Pb−Free / Halogen Free) 5,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 EFC8811R TEST CIRCUITS ARE EXAMPLE OF MEASURING FET1 SIDE S2 S2 G2 G2 A VSS G1 G1 A VGS S1 Figure 1. Test Circuit 1 − VSSS/ISSS When FET1 is measured, Gate and Source of FET2 are short−circuited. S1 Figure 2. Test Circuit 2 − IGSS S2 S2 G2 G2 A When FET1 is measured, Gate and Source of FET2 are short−circuited. VSS G1 A VSS G1 VGS VGS S1 When FET1 is measured, Gate and Source of FET2 are short−circuited. S1 Figure 3. Test Circuit 3 − VGS(th) Figure 4. Test Circuit 4 − gFS S2 S2 IS G2 RL G2 When FET1 is measured, Gate and Source of FET2 are short−circuited. V V G1 G1 VSS VGS S1 PG Figure 6. Test Circuit 6 − td(on), tr, td(off), tf Figure 5. Test Circuit 5 − RSS(on) When FET1 is measured, Gate and Source of FET2 are short−circuited. S2 S2 G2 G2 RL V VSS G1 VGS = 0 V G1 S1 S1 Figure 7. Test Circuit 7 − Qg NOTE: IS A IG = 1 mA PG S1 When FET1 is measured, +4.5 V is added to VGS of FET2. Figure 8. Test Circuit 8 − VF(S−S) When FET2 is measured, the position of FET1 and FET2 is switched. www.onsemi.com 3 EFC8811R TYPICAL CHARACTERISTICS 4.0 3.0 2.5 2.0 1.5 VGS = 1.0 V 1.0 16 0 0.1 0.2 0.3 0.4 12 8 6 4 4 6 RSS(on), Static Source to Source On State Resistance (mW) 8 1.6 3 VGS = 4.0 V 2 VGS = 4.5 V 1 0 20 40 60 80 100 120 140 160 TA, Ambient Temperature (5C) Figure 11. RSS(on) − VGS Figure 12. RSS(on) − TA 100 7 5 2 TA = −25°C 3 2 0.1 7 75°C 5 10 7 5 VGS = 0 V 7 5 3 2 1.0 25°C 7 5 3 2 TA = 75°C 0.1 7 5 25°C 5 7 1.8 2.0 VGS = 2.5 V 4 2 3 1.4 VGS = 3.1 V 5 3 2 1.2 VGS = 3.8 V 6 2 0.01 0.001 1.0 VGS, Gate to Source Voltage (V) VSS = 6 V 2 0.8 IS = 5 A 7 0 −60 −40 −20 10 IS, Source Current (A) RSS(on), Static Source to Source On State Resistance (mW) gFS, Forward Transconductance (s) 2 3 0.6 8 3 7 5 0.4 Figure 10. IS − VGS 3 1.0 0.2 Figure 9. IS − VSS 5 10 0 VGS, Gate to Source Voltage (V) TA = 25°C IS = 5 A 0 0 VSS, Source to Source Voltage (V) 10 7 5 −25°C 10 0.5 15 100 TA = 75°C 2 20 0 25°C 14 0.5 0 VSS = 6 V 18 4.5 V 2.5 V 1.3 V IS, Source Current (A) IS, Source Current (A) 3.5 20 TA = 25°C 10.0 V −25°C 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 0.01 10 0 0.2 0.4 0.6 0.8 1.0 VF(S−S), Forward Source to Source Voltage (V) IS, Source Current (A) Figure 13. gFS − IS Figure 14. IS − VF(S−S) www.onsemi.com 4 1.2 EFC8811R TYPICAL CHARACTERISTICS (Continued) 100K 7 VGS, Gate to Source Voltage (V) Switching Time, S / W Time (ns) 4.5 td(off) 5 3 2 10K tf 7 5 3 2 1K tr 7 5 3 2 td(on) 100 7 5 3 2 10 3.5 3.0 2.5 2.0 1.5 1.0 0.5 VDD = 6 V, VGS = 4.5 V 2 0.01 3 5 7 2 0.1 3 5 7 2 1 3 5 7 VSS = 6 V IS = 27 A 4.0 0 10 0 10 20 30 Figure 15. S / W Time − IS Figure 16. VGS − Qg 3.0 ISP = 100 A (PW ≤ 100 ms) 1 ms IS = 27 A PT, Total Dissipation (W) IS, Source Current (A) 7 5 10 ms 3 2 100 ms 10 7 5 3 2 Operation in this area is limited by RSS(on). 1.0 7 5 3 2 0.1 7 5 3 2 DC operation TA = 25°C Single Pulse Source mounted on ceramic substrate (5000 mm2 × 0.8 mm) 0.01 0.01 2 3 5 7 70 Qg, Total Gate Charge (nC) 0.1 2 3 5 7 2 1.0 3 5 7 10 2 3 5 7 80 90 2.5 2.0 1.5 1.0 0.5 0 100 0 20 40 60 80 120 100 VSS, Source to Source Voltage (V) TA, Ambient Temperature (5C) Figure 17. SOA Figure 18. PT − TA 140 RqJA, Thermal Resistance (5C/W) 100 Duty Cycle = 0.5 10 1 0.1 0.01 0.02 0.05 0.2 Single Pulse 0.01 0.001 0.1 Surface mounted on ceramic substrate (5000 mm2 × 0.8 mm) 2 0.000001 3 5 7 0.00001 2 3 5 7 0.0001 2 3 5 7 0.001 2 3 5 7 0.01 2 PT, Pulse Time (s) Figure 19. RqJA − Pulse Time www.onsemi.com 5 100 Surface mounted on ceramic substrate (5000 mm2 × 0.8 mm) 5 100 60 50 IS, Source Current (A) 1000 7 3 2 40 3 5 7 0.1 2 3 5 7 1 2 3 5 7 10 160 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS CSP6, 1.77x3.54 / EFCP3517−6DGH−020 CASE 568AL ISSUE O DATE 23 OCT 2013 SCALE 4:1 E ÈÈ ÈÈ PIN A1 REFERENCE 2X 0.05 C 2X A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. DIM A b b1 D E e e2 L D 0.05 C TOP VIEW A 0.03 C RECOMMENDED SOLDERING FOOTPRINT* 0.03 C C SIDE VIEW e2 2X b 1 e2 2 SEATING PLANE 2X 8X R0.125 4X 1.25 0.25 PACKAGE OUTLINE 0.50 PITCH e/2 3 0.05 C A B e 1 0.03 C 4X MILLIMETERS MIN MAX 0.22 −−− 0.22 0.28 0.22 0.28 1.77 BSC 3.54 BSC 0.50 BSC 1.00 BSC 1.22 1.28 2.00 PITCH b1 6 5 4 L BOTTOM VIEW DOCUMENT NUMBER: DESCRIPTION: 98AON79069F DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. CSP6, 1.77X3.54 / EFCP3517−6DGH−020 PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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