EGP20KTA

High Efficiency Rectifiers 2.0A Glass Passivated EGP20A - EGP20K Features • • • • • Glass−Passivated Cavity−Free Junction High Surge Current Capability Low Leakage Current Super−Fast Recovery Time for High Efficiency Low Forward Voltage, High Current Capability www.onsemi.com ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol IF(AV) IFSM TJ, TSTG Parameter Average Rectified Current 0.375 inch lead length at TA = 55°C Value Units 2.0 A 75 A Peak Forward Surge Current 8.3 ms single half−sine−wave Superimposed on rated load (JEDEC method) AXIAL LEAD DO 204 CASE 017AJ MARKING DIAGRAM EGP20K $Y&Z&3 Junction and Storage Temperature Range −65 to 150 °C EGP20K $Y &Z &3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. = Specific Device Code = ON Semiconductor Logo = Assembly Code = Date Code THERMAL CHARACTERISTICS Symbol Parameter PD Value Units 3.13 W Total Device Dissipation Derate above 25°C 25 mW°C RqJA Thermal Resistance, Junction to Ambient 40 °C/W RqJL Thermal Resistance, Junction to Lead 15 °C/W ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Device 20A 20B 20C 20D 20F 20G 20J 20K Units Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V Maximum RMS Voltage 35 70 105 140 210 280 420 560 V 50 100 150 200 300 400 600 800 Parameter DC Reverse Voltage (Rated VR) Maximum Reverse Current at Rated VR V TA = 25_C 5.0 mA TA = 125_C 100 mA Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Maximum Forward Voltage @ 2.0 A Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 50 0.95 75 1.25 70 1.7 45 nS V pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. © Semiconductor Components Industries, LLC, 2007 February, 2020 − Rev. 1 1 Publication Order Number: EGP20K/D EGP20A − EGP20K TYPICAL PERFORMANCE CHARACTERISTICS Figure 1. Forward Current Derating Curve Figure 2. Non−Repetitive Surge Current Figure 3. Forward Characteristics Figure 4. Reserve Characteristics Figure 5. Junction Capacitance www.onsemi.com 2 EGP20A − EGP20K Reverse Recovery Time Characterstic and Test Circuit Diagram Figure 6. Figure 7. ORDERING INFORMATION Device Package Shipping EGP20K Axial Lead / DO−204 CASE 017AJ 4000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS AXIAL LEAD DO 204 CASE 017AJ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13437G AXIAL LEAD DO 204 DATE 30 NOV 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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