DATA SHEET
www.onsemi.com
Dual Bias Resistor
Transistors
(2)
(3)
R1
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias Resistor
Network
EMD5DXV6T5G
Q2
R2
(5)
6
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
357
(Note 1)
2.9
(Note 1)
mW
THERMAL CHARACTERISTICS
TA = 25°C
Derate above 25°C
MARKING DIAGRAM
RqJA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
PD
500
(Note 1)
4.0
(Note 1)
mW
TA = 25°C
Derate above 25°C
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature
U5 MG
G
ORDERING INFORMATION
Package
Shipping†
EMD5DXV6T5G
SOT−563
(Pb−Free)
8000 / Tape &
Reel
EMD5DXV6T1G
SOT−563
(Pb−Free)
4000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
mW/°C
Thermal Resistance Junction-to-Ambient
Total Device Dissipation
3
(Note: Microdot may be in either location)
Symbol
Total Device Dissipation
2
U5 = Specific Device Code
M = Month Code
G
= Pb−Free Package
and Q2, − minus sign for Q1 (PNP) omitted)
Characteristic
(One Junction Heated)
54
SOT−563
CASE 463A
1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
Collector Current
(6)
1
Features
Rating
R1
(4)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch Tape and Reel
Lead Free Solder Plating
These Devices are Pb−Free and are RoHS Compliant
R2
Q1
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMD5DXV6 series, two
complementary BRT devices are housed in the SOT−563 package
which is ideal for low power surface mount applications where board
space is at a premium.
•
•
•
•
•
•
(1)
mW/°C
RqJA
250
(Note 1)
°C/W
TJ, Tstg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2014
April, 2022 − Rev. 2
1
Publication Order Number:
EMD5DXV6/D
EMD5DXV6T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA)
IEBO
−
−
1.0
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
20
35
−
VCE(SAT)
−
−
0.25
Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
−
−
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Characteristic
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
VOH
4.9
−
−
Vdc
Input Resistor
R1
3.3
4.7
6.1
kW
Resistor Ratio
R1/R2
0.38
0.47
0.56
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA)
IEBO
−
−
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
80
140
−
VCE(SAT)
−
−
0.25
Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
−
−
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
−
−
Vdc
Input Resistor
R1
33
47
61
kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
PD , POWER DISSIPATION (MILLIWATTS)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
250
200
150
100
50
0
-50
RqJA = 833°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
www.onsemi.com
2
150
EMD5DXV6T5G
1000
1
VCE = 10 V
IC/IB = 10
TA=75°C
25°C
0.1
0.01
TA=75°C
hFE, DC CURRENT GAIN
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — EMD5DXV6 PNP TRANSISTOR
-25°C
10
20
30
50
40
60
100
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
1000
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 mA
TA = 25°C
10
Cob , CAPACITANCE (pF)
10
1
IC, COLLECTOR CURRENT (mA)
12
8
6
4
SERIES 1
2
0
-25°C
10
1
0
25°C
100
75°C
10
1
VO = 5 V
0.1
0.01
0
5
10
20
30
15
25
35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
TA=-25°C
25°C
0
Figure 4. Output Capacitance
2
4
6
8
Vin, INPUT VOLTAGE (VOLTS)
10
Figure 5. Output Current versus Input Voltage
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3
12
EMD5DXV6T5G
10
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — EMD5DXV6 NPN TRANSISTOR
1
25°C
TA=-25°C
75°C
0.1
TA=75°C
25°C
-25°C
100
0.01
0
10
50
20
40
IC, COLLECTOR CURRENT (mA)
10
IC, COLLECTOR CURRENT (mA)
1
Figure 6. VCE(sat) versus IC
Figure 7. DC Current Gain
1
100
f = 1 MHz
IE = 0 mA
TA = 25°C
IC, COLLECTOR CURRENT (mA)
0.4
0.2
0
0
25°C
75°C
0.6
TA=-25°C
10
1
0.1
0.01
VO = 5 V
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
100
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
Figure 9. Output Current versus Input Voltage
Figure 8. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0.8
100
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 10. Input Voltage versus Output Current
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4
10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE H
6
1
SCALE 4:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
DATE 26 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOT−563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX MG
1
XX = Specific Device Code
M = Month Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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