DATA SHEET
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Dual Transistor Power Management
(3)
(2)
R1
Q1
NPN/PNP Dual (Complementary)
(1)
Q2
R2
EMF18XV6T5
(4)
(6)
(5)
Features
• Low VCE(SAT), t0.5 V
• These are Pb−Free Devices
6
1
MAXIMUM RATINGS
Q1
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Collector Current
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
Q2
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−60
V
Collector −Base Voltage
VCBO
−50
V
Emitter −Base Voltage
VEBO
−6.0
V
IC
−100
mAdc
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
Symbol
Max
Unit
PD
357
(Note 1)
2.9
(Note 1)
mW
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
RqJA
Characteristic
(Both Junctions Heated)
Total Device Dissipation
mW/°C
350
(Note 1)
°C/W
Symbol
Max
Unit
PD
500
(Note1)
4.0
(Note 1)
mW
TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA
250
(Note 1)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
1
UV M G
G
UV = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
EMF18XV6T5G
SOT−563
(Pb−Free)
8000/Tape & Reel
EMF18XV6T1G
SOT−563
(Pb−Free)
4000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad.
© Semiconductor Components Industries, LLC, 2006
April, 2022 − Rev. 3
1
Publication Order Number:
EMF18XV6/D
EMF18XV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C) (Note 2)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)
IEBO
−
−
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
80
140
−
VCE(sat)
−
−
0.25
Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
VOL
−
−
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
−
−
Vdc
Input Resistor
R1
32.9
47
61.1
kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0)
V(BR)CBO
−60
−
−
Vdc
Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−50
−
−
Vdc
Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0)
V(BR)EBO
−6.0
−
−
Vdc
ICBO
−
−
−0.5
nA
Q1: NPN
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
Q2: PNP
Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0)
Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0)
Collector−Emitter Saturation Voltage (Note 4)
(IC = −50 mAdc, IB = −5.0 mAdc)
DC Current Gain (Note 4) (VCE = −6.0 Vdc, IC = −1.0 mAdc)
IEBO
−
−
−0.5
mA
VCE(sat)
−
−
−0.5
Vdc
hFE
120
−
560
−
fT
−
140
−
MHz
COB
−
3.5
−
pF
Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz)
3. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
4. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
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2
EMF18XV6T5
10
1000
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — Q1, NPN
IC/IB = 10
1
25°C
TA=-25°C
75°C
0.1
VCE = 10 V
TA=75°C
25°C
-25°C
100
0.01
0
10
50
20
40
IC, COLLECTOR CURRENT (mA)
10
IC, COLLECTOR CURRENT (mA)
1
Figure 1. VCE(sat) versus IC
Figure 2. DC Current Gain
1
100
f = 1 MHz
IE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
0.4
TA=-25°C
10
1
0.1
0.01
0.2
0
25°C
75°C
0.6
0
VO = 5 V
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
Figure 3. Output Capacitance
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
Figure 4. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0.8
100
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 5. Input Voltage versus Output Current
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3
50
10
EMF18XV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − Q2, PNP
1000
VCE = 10 V
120
90
300 mA
250
200
60
150
IB = 50 mA
0
3
6
12
9
10
0.1
15
10
100
IC, COLLECTOR CURRENT (mA)
Figure 6. IC − VCE
Figure 7. DC Current Gain
900
TA = 25°C
800
COLLECTOR VOLTAGE (mV)
VCE , COLLECTOR‐EMITTER VOLTAGE (V)
1
VCE, COLLECTOR VOLTAGE (V)
2
1.5
1
0.5
700
600
500
400
300
TA = 25°C
VCE = 5 V
200
100
0
0.01
0.1
1
10
0
0.2
100
1
5
10
20
40
60
80
IC, COLLECTOR CURRENT (mA)
Figure 8. Collector Saturation Region
Figure 9. On Voltage
13
14
12
12
11
10
9
8
7
6
0.5
IB, BASE CURRENT (mA)
Cob, CAPACITANCE (pF)
Cib, INPUT CAPACITANCE (pF)
TA = - 25°C
100
100
30
0
TA = 25°C
TA = 75°C
DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
TA = 25°C
100
150 200
10
8
6
4
2
0
1
2
3
0
4
0
VEB (V)
10
20
30
VCB (V)
Figure 10. Capacitance
Figure 11. Capacitance
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4
40
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE H
6
1
SCALE 4:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
DATE 26 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOT−563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX MG
1
XX = Specific Device Code
M = Month Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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