DATA SHEET
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Power Management, Dual
Transistors
(2)
(3)
(1)
Q1
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
Q2
R2
EMF5XV6T5
(4)
R1
(5)
(6)
Features
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These are Pb−Free Devices
6
1
Unit
SOT−563
CASE 463A
PLASTIC
Vdc
MARKING DIAGRAM
MAXIMUM RATINGS
Rating
Symbol
Value
Q1 (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Collector Current
Electrostatic Discharge
ESD
50
HBM Class 1
MM Class B
1
Q2 (TA = 25°C)
Collector-Emitter Voltage
VCEO
−12
Vdc
Collector-Base Voltage
VCBO
−15
Vdc
Emitter-Base Voltage
VEBO
−6.0
Vdc
IC
−1.0 (Note 1)
−0.5
Adc
Collector Current − Peak
Collector Current − Continuous
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
Symbol
Max
Unit
357 (Note 2)
2.9 (Note 2)
mW
mW/°C
RqJA
350 (Note 2)
°C/W
Symbol
Max
Unit
500 (Note 2)
4.0 (Note 2)
mW
mW/°C
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
PD
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
UY = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
UY M G
G
Thermal Resistance,
Junction-to-Ambient
RqJA
250 (Note 2)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
Device
Package
Shipping†
EMF5XV6T5G
SOT−563
(Pb−Free)
8000/Tape & Reel
EMF5XV6T1G
SOT−563
(Pb−Free)
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Single pulse 1.0 ms.
2. FR−4 @ Minimum Pad.
© Semiconductor Components Industries, LLC, 2005
April, 2022 − Rev. 3
1
Publication Order Number:
EMF5XV6T5/D
EMF5XV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
Typ
Max
Unit
Q1
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
0.1
mAdc
(IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
(VCE = 10 V, IC = 5.0 mA)
hFE
80
140
−
(IC = 10 mA, IB = 0.3 mA)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 3)
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
VCE(sat)
−
−
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
VOL
−
−
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
−
−
Vdc
Input Resistor
R1
32.9
47
61.1
kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
Q2
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−12
−
−
Vdc
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
−15
−
−
Vdc
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
−6.0
−
−
Vdc
Collector Cutoff Current
(VCB = −15 Vdc, IE = 0)
ICBO
−
−
−0.1
mAdc
(VEB = −6.0 Vdc)
IEBO
−
−
−0.1
mAdc
DC Current Gain (Note 4)
(IC = −10 mA, VCE = −2.0 V)
hFE
270
−
680
Collector −Emitter Saturation Voltage (Note 4)
(IC = −200 mA, IB = −10 mA)
VCE(sat)
−
−
−250
mV
Base −Emitter Saturation Voltage (Note 4)
(IC = −150 mA, IB = −20 mA)
VBE(sat)
−
−0.81
−0.90
V
(IC = −150 mA, VCE = −3.0 V)
VBE(on)
−
−0.81
−0.875
V
Emitter Cutoff Current
ON CHARACTERISTICS
Base −Emitter Turn−on Voltage (Note 4)
Input Capacitance
(VEB = 0 V, f = 1.0 MHz)
Cibo
−
52
−
pF
Output Capacitance
(VCB = 0 V, f = 1.0 MHz)
Cobo
−
30
−
pF
Turn−On Time
(IBI = −50 mA, IC = −500 mA, RL = 3.0 W)
ton
−
50
−
ns
Turn−Off Time
(IB1 = IB2 = −50 mA, IC = −500 mA, RL = 3.0 W)
toff
−
80
−
ns
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
RqJA = 833°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
www.onsemi.com
2
150
EMF5XV6T5
10
1000
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS FOR Q1
IC/IB = 10
1
25°C
TA=-25°C
75°C
0.1
VCE = 10 V
TA=75°C
25°C
-25°C
100
0.01
0
10
50
20
40
IC, COLLECTOR CURRENT (mA)
10
IC, COLLECTOR CURRENT (mA)
1
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
1
100
f = 1 MHz
IE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
0.4
TA=-25°C
10
1
0.1
0.01
0.2
0
25°C
75°C
0.6
0
VO = 5 V
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
100
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0.8
100
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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3
50
10
EMF5XV6T5
TYPICAL ELECTRICAL CHARACTERISTICS FOR Q2
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.1
1
IC/IB = 200
100
50
0.01
10
TA = 25°C
0.001
0.001
0.01
hFE, DC CURRENT GAIN
25°C
−55°C
0.1
TA = 125°C
Figure 7. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 8. Collector Emitter Saturation Voltage
vs. Collector Current
1
500
125°C
25°C
200
TA = −55°C
100
0
0.001
0.01
0.1
IC/IB = 50
25°C
0.1
−55°C
TA = 125°C
0.01
0.001
1
IC, COLLECTOR CURRENT (AMPS)
1
IC = 1.0 A
0.7
0.6
0.5
0.3
0.2
0.1
500 mA
50 mA
250 mA
10 mA
5.0 mA
0
0.00001
0.0001
1
1.2
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.8
0.1
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
TA = 25°C
0.9
0.01
IC, COLLECTOR CURRENT (AMPS)
Figure 9. DC Current Gain
0.4
1
0.1
IC, COLLECTOR CURRENT (AMPS)
VCE = 1.0 V
300
0.01
IC, COLLECTOR CURRENT (AMPS)
600
400
IC/IB = 100
0.01
0.001
1
0.1
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
1
1
−55°C
0.8
25°C
TA = 125°C
0.6
0.4
0.2
100 mA
0.001
0.01
0.1
1
0
0.001
IB, BASE CURRENT (AMPS)
0.01
0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Collector Emitter Saturation Voltage
vs Base Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
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4
1
EMF5XV6T5
55
1
Cibo, INPUT CAPACITANCE
VCE = 3.0 V
−55°C
0.8
25°C
0.6
TA = 125°C
0.4
0.2
0
0.001
0.01
0.1
1
f = 1 MHz
IC = 0 A
TA = 25°C
50
45
40
35
30
25
20
0
1
2
3
4
IC, COLLECTOR CURRENT (AMPS)
VEB, EMITTER BASE VOLTAGE
Figure 13. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 14. Input Capacitance
35
Cobo, OUTPUT CAPACITANCE
VBE(on), BASE EMITTER TURN−ON
VOLTAGE (V)
1.2
f = 1 MHz
IE = 0 A
TA = 25°C
30
25
20
15
10
0
2
4
6
8
10
VCB, COLLECTOR BASE VOLTAGE
Figure 15. Output Capacitance
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5
12
14
5
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE H
6
1
SCALE 4:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
DATE 26 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOT−563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX MG
1
XX = Specific Device Code
M = Month Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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